Single N-channel MOSFET with schottky diode

Single N-channel MOSFET with schottky diode
ELM14702AA-N
■General description
■Features
ELM14702AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
Vds=30V
Id=11A
Rds(on) < 16mΩ (Vgs=10V)
Rds(on) < 25mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Schottky reverse voltage
Idm
Vka
Ta=25°C
Ta=70°C
Continuous forward current
MOSFET
30
±20
11.0
9.3
50
If
Pulsed diode forward current
Ifm
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Pd
Tj, Tstg
3
2
-55 to 150
Schottky diode
• Vds(V)=30V
• If=3A
• Vf < 0.5V@1A
Ta=25°C. Unless otherwise noted.
Schottky
Unit
Note
V
V
30
4.4
3.2
30
3
2
-55 to 150
A
1
A
V
2
A
1
A
2
W
°C
■Thermal characteristics
Parameter (MOSFET)
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Parameter (Schottky)
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
31
59
16
Typ.
36
67
25
Max.
40
75
24
Max.
40
75
30
Unit
°C/W
°C/W
°C/W
Unit
°C/W
°C/W
°C/W
Note
1
3
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
4-1
D
K
S
A
G
Single N-channel MOSFET with schottky diode
ELM14702AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
Gate-body leakage current
Gate threshold voltage
On state drain current
BVdss Id=250μA, Vgs=0V
Vr=30V
Idss Vr=30V, Ta=125°C
Vr=30V, Ta=150°C
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Static drain-source on-resistance
Vgs=10V
Rds(on) Id=11A
Zero gate voltage drain current
(Set by schottky leakage)
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
Ta=125°C
Vgs=4.5V, Id=8A
Vds=5V, Id=11A
Is=1A, Vgs=0V
Forward transconductance
Gfs
Diode+schottky forward voltage
Vsd
Max. body-diode+schottky continuous current
Is
DYNAMIC PARAMETERS
Input capacitance
Ciss
Vgs=0V, Vds=15V
Output capacitance (FET+Schottky)
Coss
f=1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge (10V)
Qg
Total gate charge (4.5V)
Qg Vgs=10V, Vds=15V
Gate-source charge
Qgs Id=11A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Vgs=10V, Vds=15V
tr
Turn-on rise time
td(off) RL=1.35Ω, Rgen=3Ω
Turn-off delay time
Turn-off fall time
tf
Body diode+schottky reverse recovery time
trr If=11A, dIf/dt=100A/μs
Body diode+schottky reverse recovery charge Qrr If=11A, dIf/dt=100A/μs
30
1.0
40
V
0.007 0.050
3.200 10.000 mA
12.000 20.000
100 nA
1.8
3.0
V
A
13.4 16.0
mΩ
16.8 21.0
20.0 25.0 mΩ
25
S
0.45 0.50
V
5
A
1040
212
121
0.70
1250
19.8
9.8
2.5
3.5
4.5
3.9
17.4
3.2
19
9
24.0
12.0
0.85
7.0
7.0
30.0
5.7
23
11
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET with schottky diode
ELM14702AA-N
■Typical electrical and thermal characteristics
30
20
4V
10V
25
20
3.5V
Id (A)
Id (A)
Vds=5V
16
4.5V
15
12
125°C
8
10
25°C
Vgs=3V
4
5
0
0
0
1
2
3
4
5
1.5
2
Vds (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
Vgs (Volts)
Figure 2: Transfer Characteristics
24
1.6
Vgs=10V
22
Vgs=4.5V
Normalized On-Resistance
Rds(on) (m�)
2.5
20
18
16
14
Vgs=10V
12
Id=11A
1.4
1.2
Vgs=4.5V
1
10
0
5
10
15
0.8
20
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
50
1.0E+00
Id=11A
40
Is (A)
Rds(on) (m�)
125°C
30
1.0E-02
125°C
20
25°
1.0E-01
FET+SCHOTTKY
1.0E-03
25°C
1.0E-04
10
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Single N-channel MOSFET with schottky diode
ELM14702AA-N
10
1250
Capacitance (pF)
8
Vgs (Volts)
1500
Vds=15V
Id=11A
6
4
2
750
500
0
4
8
12
16
20
0
5
10
15
50
Rds(on)
limited
100�s
Power (W)
10ms
0.1s
1.0
1s
Tj(max)=150°C
Ta=25°C
DC
1
10
100
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
30
30
20
10
10s
0.1
0.1
25
Tj(max)=150°C
Ta=25°C
40
10�s
1ms
20
Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
Id (Amps)
Crss
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
Z�ja Normalized Transient
Thermal Resistance
Coss FET+SCHOTTKY
250
0
10.0
Ciss
1000
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
T
Pulse 0.1
Width (s)
0.001
0.01
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000