Single N-channel MOSFET with schottky diode ELM14702AA-N ■General description ■Features ELM14702AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • Vds=30V Id=11A Rds(on) < 16mΩ (Vgs=10V) Rds(on) < 25mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Schottky reverse voltage Idm Vka Ta=25°C Ta=70°C Continuous forward current MOSFET 30 ±20 11.0 9.3 50 If Pulsed diode forward current Ifm Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Pd Tj, Tstg 3 2 -55 to 150 Schottky diode • Vds(V)=30V • If=3A • Vf < 0.5V@1A Ta=25°C. Unless otherwise noted. Schottky Unit Note V V 30 4.4 3.2 30 3 2 -55 to 150 A 1 A V 2 A 1 A 2 W °C ■Thermal characteristics Parameter (MOSFET) Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Parameter (Schottky) Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 31 59 16 Typ. 36 67 25 Max. 40 75 24 Max. 40 75 30 Unit °C/W °C/W °C/W Unit °C/W °C/W °C/W Note 1 3 Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 3 4 5 6 7 8 Pin name SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN 4-1 D K S A G Single N-channel MOSFET with schottky diode ELM14702AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Gate-body leakage current Gate threshold voltage On state drain current BVdss Id=250μA, Vgs=0V Vr=30V Idss Vr=30V, Ta=125°C Vr=30V, Ta=150°C Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Static drain-source on-resistance Vgs=10V Rds(on) Id=11A Zero gate voltage drain current (Set by schottky leakage) Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Ta=125°C Vgs=4.5V, Id=8A Vds=5V, Id=11A Is=1A, Vgs=0V Forward transconductance Gfs Diode+schottky forward voltage Vsd Max. body-diode+schottky continuous current Is DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=15V Output capacitance (FET+Schottky) Coss f=1MHz Reverse transfer capacitance Crss Gate resistance Rg Vgs=0V, Vds=0V, f=1MHz SWITCHING PARAMETERS Total gate charge (10V) Qg Total gate charge (4.5V) Qg Vgs=10V, Vds=15V Gate-source charge Qgs Id=11A Gate-drain charge Qgd Turn-on delay time td(on) Vgs=10V, Vds=15V tr Turn-on rise time td(off) RL=1.35Ω, Rgen=3Ω Turn-off delay time Turn-off fall time tf Body diode+schottky reverse recovery time trr If=11A, dIf/dt=100A/μs Body diode+schottky reverse recovery charge Qrr If=11A, dIf/dt=100A/μs 30 1.0 40 V 0.007 0.050 3.200 10.000 mA 12.000 20.000 100 nA 1.8 3.0 V A 13.4 16.0 mΩ 16.8 21.0 20.0 25.0 mΩ 25 S 0.45 0.50 V 5 A 1040 212 121 0.70 1250 19.8 9.8 2.5 3.5 4.5 3.9 17.4 3.2 19 9 24.0 12.0 0.85 7.0 7.0 30.0 5.7 23 11 pF pF pF Ω nC nC nC nC ns ns ns ns ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET with schottky diode ELM14702AA-N ■Typical electrical and thermal characteristics 30 20 4V 10V 25 20 3.5V Id (A) Id (A) Vds=5V 16 4.5V 15 12 125°C 8 10 25°C Vgs=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 Vds (Volts) Fig 1: On-Region Characteristics 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 24 1.6 Vgs=10V 22 Vgs=4.5V Normalized On-Resistance Rds(on) (m�) 2.5 20 18 16 14 Vgs=10V 12 Id=11A 1.4 1.2 Vgs=4.5V 1 10 0 5 10 15 0.8 20 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 50 1.0E+00 Id=11A 40 Is (A) Rds(on) (m�) 125°C 30 1.0E-02 125°C 20 25° 1.0E-01 FET+SCHOTTKY 1.0E-03 25°C 1.0E-04 10 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single N-channel MOSFET with schottky diode ELM14702AA-N 10 1250 Capacitance (pF) 8 Vgs (Volts) 1500 Vds=15V Id=11A 6 4 2 750 500 0 4 8 12 16 20 0 5 10 15 50 Rds(on) limited 100�s Power (W) 10ms 0.1s 1.0 1s Tj(max)=150°C Ta=25°C DC 1 10 100 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 30 30 20 10 10s 0.1 0.1 25 Tj(max)=150°C Ta=25°C 40 10�s 1ms 20 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Id (Amps) Crss 0 Qg (nC) Figure 7: Gate-Charge Characteristics Z�ja Normalized Transient Thermal Resistance Coss FET+SCHOTTKY 250 0 10.0 Ciss 1000 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton Single Pulse 0.0001 T Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000