Single N-channel MOSFET ELM14406AA-N ■General description ■Features ELM14406AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=30V Id=11.5A (Vgs=10V) Rds(on) < 14mΩ (Vgs=10V) Rds(on) < 16.5mΩ (Vgs=4.5V) Rds(on) < 26mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±12 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Repetitive avalanche energy L=0.1mH Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range 11.5 Id A 1 A 2 Idm 9.6 80 Iav 25 A 2, 5 Eav 78 3.0 mJ 2, 5 Pd Tj, Tstg W 2.1 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Max. 40 Unit °C/W 48 12 65 16 °C/W °C/W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 Typ. 23 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 DRAIN DRAIN 7 8 DRAIN DRAIN 4-1 D G S Single N-channel MOSFET ELM14406AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Rds(on) Gfs Vsd 0.003 1.000 5.000 μA 100 nA 1.0 1.5 V A 11.5 14.0 16.0 19.2 13.5 19.5 16.5 26.0 mΩ mΩ 1.00 S V 4.5 A 2300 pF 201 142 0.8 1.8 pF pF Ω 18.0 24.0 nC Ta=55°C 0.8 60 Ta=125°C Vgs=4.5V, Id=10A Vgs=2.5V, Id=8A Vds=5V, Id=10A Is=10A, Vgs=0V Ciss Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V 25 38 0.83 Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 30 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V, Id=12A Static drain-source on-resistance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 1630 Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg Vgs=4.5V, Vds=15V, Id=11.5A 2.5 5.5 mΩ nC nC td(on) 4.0 6.0 ns tr Vgs=10V, Vds=15V td(off) RL=1.2Ω, Rgen=3Ω 5.0 32.0 7.5 50.0 ns ns 5.0 18.7 12.5 10.0 24.0 15.0 ns ns nC tf trr Qrr If=10A, dIf/dt=100A/μs If=10A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM14406AA-N ■Typical electrical and thermal characteristics 50 10V 2.5V 3V 40 20 30 15 20 2V 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 25°C 5 Vgs=1.5V 0 125°C 10 10 0 5 0 30 0.5 1.5 2 2.5 Vgs(Volts) Figure 2: Transfer Characteristics Id=10A 3 Normalized On-Resistance 20 10 0 5 Vgs=2.5V 1.2 Vgs=10V 0 Vgs=4.5V 1.4 Vgs=4.5V 15 Vgs=10V 1.6 Vgs=2.5V 5 1 0.8 10 15 20 25 30 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 Id=10A Vgs=0V 1.0E+00 30 125°C 1.0E-01 125°C Is (A) Rds(ON) (m� ) 1 1.8 25 Rds(on) (m� ) Vds=5V 25 Id(A) Id (A) 30 4.5V 1.0E-02 20 25°C 1.0E-03 25°C 10 1.0E-04 0 0.00 1.0E-05 2.00 4.00 6.00 8.00 10.00 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 0.0 0.2 0.4 Vsd (Volts) 0.6 0.8 1.0 Figure 6: Body-Diode Characteristics 1.2 Single N-channel MOSFET ELM14406AA-N 5 2250 2000 Capacitance (pF) 4 Vgs (Volts) 2500 Vds=15V Id=11.5A 3 2 1 1750 Ciss 1500 1250 1000 750 Coss Crss 500 250 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 24 0 100.0 Rds(on) limited 1ms 10.0 Power (W) Id (Amps) 0.1s 1s Z�ja Normalized Transient Thermal Resistance 1 10 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 Tj(max)=150°C Ta=25°C 30 20 0 0.001 DC 0.1 0.1 30 10 10s Tj(max)=150°C Ta=25°C 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 40 10ms 1.0 10 50 10�s 100�s 5 D=T on/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton Single Pulse 0.0001 T 1 10 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 4-4 100 1000