elm36800ea

Dual N-channel MOSFET
ELM36800EA-S
■General description
■Features
ELM36800EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=3.5A
Rds(on) < 68mΩ (Vgs=10V)
Rds(on) < 98mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
3.5
2.8
10
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
A
1.15
3
W
0.73
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Pin No.
Pin name
5
1
2
GATE1
SOURCE2
3
4
GATE2
DRAIN2
5
6
SOURCE1
DRAIN1
1
2
4
3
Max.
Unit
110
150
°C/W
°C/W
80
°C/W
Note
■Circuit
SOT-26(TOP VIEW)
6
Typ.
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM36800EA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=20V, Vgs=0V, Ta=55°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
2.5
V
A
1
mΩ
1
S
V
1
1
68
Vgs=4.5V, Id=2A
75
98
Vds=5V, Id=3.5A
If=0.8A, Vgs=0V
4.5
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Ciss
Coss
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgs Vgs=10V, Vds=15V, Id=3.5A
Qgd
td(on)
tr
Vgs=10V, Vds=15V, Id=1A
td(off) RL=15Ω, Rgen=6Ω
Vgs=0V, Vds=15V, f=1MHz
Qg
trr
1.5
nA
55
Gfs
Vsd
Body diode reverse recovery time
1.0
10
If=0.8A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
μA
±100
Vgs=10V, Id=3.5A
Forward transconductance
Diode forward voltage
DYNAMIC PARAMETERS
tf
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Turn-off fall time
30
Vds=24V, Vgs=0V
Gate threshold voltage
On state drain current
Turn-off delay time
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.2
200
40
20
240
pF
pF
pF
6.5
8.5
nC
2
1.2
1.6
7
11
nC
nC
ns
2
2
2
12
12
18
18
ns
ns
2
2
7
11
ns
2
40
80
ns
Dual N-channel MOSFET
NIKO-SEM
P6803HAG
Dual N-Channel Enhancement Mode
ELM36800EA-S
Field
Effect Transistor
■Typical electrical and thermal characteristics
ID, Drain-source current(A)
VGS= 10V
6.0V
RDS(ON), Normalized
Drain-source on-resistance
On-Region Characteristics.
10
4.5V
8
4.0V
6
4
3.5V
2
3.0V
0
0
1
TSOP-6
Lead-Free
On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.8
VGS= 4.0V
1.6
4.5V
1.4
5.0V
1.2
6.0V
7.0V
1
10V
0.8
2
0
4
3
2
VGS, Drain-Source Voltage(V)
4
6
8
10
ID, Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage.
1.6
ID= 3.5A
VGS= 10V
1.4
1.2
1
0.8
0.6
-50
0.275
RDS(ON), On-resistance(OHM)
DS(ON)
R
, Normalized
Drain-source on-resistance
On-Resistance Variation with Temperature.
0.175
0.125
0
25
75
50
100
125
TA= 125°C
TA= 25°C
0.075
0.025
-25
ID=2A
0.225
150
4
2
TJ, Junction Temperature(°C)
Is, Reverse Drain Current (A)
10
ID, Drain Current(A)
125°C
TA= -55°C
8
25°C
6
4
2
0
1
2
3
4
8
10
Body Diode Forword Voltage Variation with
Source Current and Temperature.
Transfer Characteristics.
VDS= 5V
6
VGS, Gate to Source Voltage(V)
5
VGS, Gate to Source Voltage(V)
10
VGS= 0V
1
TA= 125°C
3
4-3
-55°C
0.01
0.001
0.0001
0
6
25°C
0.1
0.2
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forword Voltage(V)
OCT-12-2005
1.4
Dual N-channel MOSFET
NIKO-SEM
10
ID = 3.5A
400
15V
VDS= 5V
Capacitance(pF)
8
VGS (Voltage)
10V
6
4
2
300
2
3
4
6
5
Ciss
200
Coss
100
0
1
Crss
0
7
0
5
10
Qg (nC)
20
25
30
Single Pulse Maximum Power Dissipation.
5
30
100
us
10
T
IMI
N)L
O
(
S
RD
3
4
1m
s
10m
s
1
100
ms
1s
DC
0.3
VGS= 10V
SINGLE PULSE
R¿ JA=150°C/W
TA=25°C
0.1
0.03
0.1
0.3
1
Power(W)
ID, Drain Current(A)
15
VGS (Voltage)
Maximum Safe Operating Area.
0.01
TSOP-6
Lead-Free
Capacitance Characteristics
Gate-Charge Characteristics
0
P6803HAG
Dual N-Channel Enhancement Mode
ELM36800EA-S
Field
Effect Transistor
3
2
VGS= 10V
SINGLE PULSE
R¿ JA=150°C/W
TA=25°C
1
3
10
30
0
0.01
50
VDS, Drain-Source Voltage(V)
0.1
1
10
100
300
Single pulse time(SEC)
D=0.5
0.5
P(pk)
r(t), Normalized Effective
Transient Thermal Resistance
Transient Thermal Response Curve.
1
0.2
0.2
0.1
0.05
0.05
0.02
R¿ JA(t) = r(t) * R¿ ��
R¿ JA=150°C/W
TJ-TA=P*R¿ JA(t)
Duty Cycle, D= t1/ t2
0.02
0.01
Single Pulse
0.01
0.0001
t1
t2
0.1
0.001
0.01
0.1
1
10
100
t1 Time(Sec)
4
4-4
OCT-12-2005
300