Si53306

Si53306
1 : 4 L O W - J ITTER U N I V E R S A L B U F F E R / L E V E L T R A N S L A T O R
Features
Independent VDD and VDDO :
1.8/2.5/3.3 V
1.2/1.5 V LVCMOS output support
Selectable LVCMOS drive strength to
tailor jitter and EMI performance
Small size: 16-QFN (3 mm x 3 mm)
RoHS compliant, Pb-free
Industrial temperature range:
–40 to +85 °C
Applications
Storage
Telecom
 Industrial
 Servers
 Backplane clock distribution
VDD
Power
Supply
Filtering
3
GND
4
Q0
SFOUT0
8
CLK
GND
PAD
SFOUT1
2
7
CLK
Q3
VDDO
SFOUT[1:0]
1
13
Functional Block Diagram
VDD
14
The Si53306 is an ultra low jitter four output differential buffer with pin-selectable
output clock signal format. The Si53306 utilizes Silicon Laboratories' advanced
CMOS technology to fanout clocks from 1 to 725 MHz with guaranteed low
additive jitter, low skew, and low propagation delay variability. The Si53306
features minimal cross-talk and provides superior supply noise rejection,
simplifying low jitter clock distribution in noisy environments. Independent core
and output bank supply pins provide integrated level translation without the need
for external circuitry.
15
Description
Q0
Pin Assignments
6

Q3


OE

16
High-speed clock distribution
Ethernet switch/router
 Optical Transport Network (OTN)
 SONET/SDH
 PCI Express Gen 1/2/3
Ordering Information:
See page 24.
5

VDDO
4 differential or 8 LVCMOS outputs 
Ultra-low additive jitter: 45 fs rms
 Wide frequency range: 1 to 725 MHz 
 Any-format input with pin selectable 
output formats: LVPECL, low power
LVPECL, LVDS, CML, HCSL,

LVCMOS

 Synchronous output enable


OE
Q0
12
Q1
11
Q1
10
Q2
9
Q2
Patents pending
Q0
Q1
CLK
Q1
CLK
Q2
Q2
Q3
Q3
Rev. 1.0 2/15
Copyright © 2015 by Silicon Laboratories
Si53306
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Silicon Laboratories Confidential. Information contained herein is covered under non-disclosure agreement (NDA).
Si53306
TABLE O F C ONTENTS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.1. Universal, Any-Format Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.2. Input Bias Resistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.3. Universal, Any-Format Output Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.4. Synchronous Output Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.5. Output Enable Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.6. Power Supply (VDD and VDDO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.7. Output Clock Termination Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
2.8. AC Timing Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.9. Typical Phase Noise Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
2.10. Power Supply Noise Rejection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3. Pin Description: 16-Pin QFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5. Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6. PCB Land Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
7. Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.1. Si53306 Top Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.2. Top Marking Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
2
Rev. 1.0
Si53306
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Operating
Temperature
Supply Voltage Range*
Output Buffer Supply
Voltage*
Symbol
Test Condition
Min
Typ
Max
Unit
–40
—
85
°C
1.71
1.8
1.89
V
2.38
2.5
2.63
V
2.97
3.3
3.63
V
LVPECL, low power LVPECL,
LVCMOS
2.38
2.5
2.63
V
2.97
3.3
3.63
V
HCSL
2.97
3.3
3.63
V
LVDS, CML, LVCMOS
1.71
1.8
1.89
V
2.38
2.5
2.63
V
2.97
3.3
3.63
V
2.38
2.5
2.63
V
2.97
3.3
3.63
V
2.97
3.3
3.63
V
TA
VDD
VDDOX
LVDS, CML
LVPECL, low power LVPECL
HCSL
*Note: Core supply VDD and output buffer supplies VDDO are independent. LVCMOS clock input is not supported for VDD =
1.8V but is supported for LVCMOS clock output for VDDOX = 1.8V. LVCMOS outputs at 1.5V and 1.2V can be
supported via a simple resistor divider network. See “2.7.1. LVCMOS Output Termination To Support 1.5V and 1.2V”
Table 2. Input Clock Specifications
(VDD=1.8 V  5%, 2.5 V  5%, or 3.3 V  10%, TA=–40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Differential Input Common
Mode Voltage
VCM
VDD = 2.5 V 5%, 3.3 V 10%
0.05
—
—
V
Differential Input Swing
(peak-to-peak)
VIN
0.2
—
2.2
V
LVCMOS Input High Voltage
VIH
VDD = 2.5 V 5%, 3.3 V 10%
VDD x 0.7
—
—
V
LVCMOS Input Low Voltage
VIL
VDD = 2.5 V 5%, 3.3 V 10%
—
—
VDD x
0.3
V
Input Capacitance
CIN
CLK pins with respect to GND
—
5
—
pF
Rev. 1.0
3
Si53306
Table 3. DC Common Characteristics
(VDD = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Supply Current
Output Buffer
Supply Current
(Per Clock Output)
@100 MHz (diff)
@200 MHz (CMOS)
Symbol
Test Condition
Min
Typ
Max
Unit
—
55
100
mA
LVPECL (3.3 V)
—
35
—
mA
Low Power LVPECL (3.3 V)*
—
35
—
mA
LVDS (3.3 V)
—
20
—
mA
CML (3.3 V)
—
40
—
mA
HCSL, 100 MHz, 2 pF load (3.3 V)
—
35
—
mA
CMOS (1.8 V, SFOUT = Open/0),
per output, CL = 5 pF, 200 MHz
—
5
—
mA
CMOS (2.5 V, SFOUT = Open/0),
per output, CL = 5 pF, 200 MHz
—
10
—
mA
CMOS (3.3 V, SFOUT = 0/1),
per output, CL = 5 pF, 200 MHz
—
20
—
mA
IDD
IDDOX
Input Clock Voltage
Reference
VREF
VREF pin
IREF = +/-500 A
—
VDD/2
—
V
Input High Voltage
VIH
SFOUTx, OE
0.8 x
VDD
—
—
V
Input Mid Voltage
VIM
SFOUTx
3-level input pins
0.45 x
VDD
0.5 x
VDD
0.55 x
VDD
V
Input Low Voltage
VIL
SFOUTx, OE
—
—
0.2 x
VDD
V
Internal Pull-down
Resistor
RDOWN
SFOUTx
—
25
—
k
RUP
SFOUTx, OE
—
25
—
k
Internal Pull-up
Resistor
*Note: Low-power LVPECL mode supports an output termination scheme that will reduce overall system power.
4
Rev. 1.0
Si53306
Table 4. Output Characteristics (LVPECL)
(VDDOX = 2.5 V ± 5%, or 3.3 V ± 10%,TA = –40 to 85 °C)
Parameter
Symbol
Output DC Common Mode
Voltage
Min
Typ
Max
Unit
VCOM
VDDOX – 1.595
—
VDDOX – 1.245
V
VSE
0.55
0.80
1.050
V
Single-Ended
Output Swing*
Test Condition
*Note: Unused outputs can be left floating. Do not short unused outputs to ground.
Table 5. Output Characteristics (Low Power LVPECL)
(VDDOX = 2.5 V ± 5%, or 3.3 V ± 10%,TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Output DC Common
Mode Voltage
VCOM
RL = 100 across Qn and Qn
VDDOX – 1.895
VSE
RL = 100 across Qn and Qn
0.25
Single-Ended
Output Swing
Typ
0.60
Max
Unit
VDDOX – 1.275
V
0.85
V
Table 6. Output Characteristics—CML
(VDDOX = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Single-Ended Output
Swing
VSE
Terminated as shown in Figure 7
(CML termination).
300
400
550
mV
Table 7. Output Characteristics—LVDS
(VDDOX = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Single-Ended Output
Swing
VSE
RL = 100 Ω across QN and QN
247
—
490
mV
Output Common
Mode Voltage
(VDDO = 2.5 V or
3.3V)
VCOM1
VDDOX = 2.38 to 2.63 V, 2.97 to
3.63 V, RL = 100 Ω across QN
and QN
1.10
1.25
1.35
V
Output Common
Mode Voltage
(VDDO = 1.8 V)
VCOM2
VDDOX = 1.71 to 1.89 V,
RL = 100 Ω across QN
and QN
0.85
0.97
1.25
V
Rev. 1.0
5
Si53306
Table 8. Output Characteristics—LVCMOS
(VDDOX = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Symbol
Output Voltage High*
Output Voltage Low*
Test Condition
Min
Typ
Max
Unit
VOH
0.75 x VDDOX
—
—
V
VOL
—
—
0.25 x VDDOX
V
*Note: IOH and IOL per the Output Signal Format Table for specific VDDOX and SFOUTX settings.
Table 9. Output Characteristics—HCSL
(VDDOX = 3.3 V ± 10%, TA = –40 to 85 °C))
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Output Voltage High
VOH
RL = 50 Ω to GND
550
700
900
mV
Output Voltage Low
VOL
RL = 50 Ω to GND
–150
0
150
mV
Single-Ended
Output Swing
VSE
RL = 50 Ω to GND
550
700
850
mV
Crossing Voltage
VC
RL = 50 Ω to GND
250
350
550
mV
Table 10. AC Characteristics
(VDD = VDDOX = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Frequency
Duty Cycle
Symbol
Test Condition
Min
Typ
Max
Unit
F
LVPECL, low power LVPECL, LVDS,
CML, HCSL
1
—
725
MHz
LVCMOS
1
—
200
MHz
200 MHz, 20/80%TR/TF<10% of
period (LVCMOS)
(12 mA drive)
40
50
60
%
20/80% TR/TF<10% of period
(Differential)
48
50
52
%
Required to meet prop delay and
additive jitter specifications
(20–80%)
0.75
—
—
V/ns
DC
Note: 50% input duty cycle.
Minimum Input Clock
Slew Rate
SR
Notes:
1. HCSL measurements were made with receiver termination. See Figure 7 on page 16.
2. Output to Output skew specified for outputs with an identical configuration.
3. Defined as skew between any output on different devices operating at the same supply voltage, temperature, and
equal load condition. Using the same type of inputs on each device, the outputs are measured at the differential cross
points.
4. Measured for 156.25 MHz carrier frequency. Sine-wave noise added to VDDOX (3.3 V = 100 mVPP) and noise spur
amplitude measured. See “AN491: Power Supply Rejection for Low-Jitter Clocks” for further details.
6
Rev. 1.0
Si53306
Table 10. AC Characteristics (Continued)
(VDD = VDDOX = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,TA = –40 to 85 °C)
Parameter
Output Rise/Fall Time
Symbol
Test Condition
Min
Typ
Max
Unit
TR/TF
LVDS, 20/80%
—
—
350
ps
LVPECL, 20/80%
—
—
350
ps
HCSL , 20/80%
—
—
280
ps
CML, 20/80%
—
—
350
ps
Low-Power LVPECL, 20/80%
—
—
350
ps
LVCMOS 200 MHz, 20/80%,
2 pF load
—
—
750
ps
500
—
—
ps
LVCMOS (12mA drive with no load)
1250
2000
2750
ps
LVPECL
675
875
1075
ps
LVDS
675
875
1075
ps
F = 1 MHz
—
1570
—
ns
F = 100 MHz
—
20
—
ns
F = 725 MHz
—
5
—
ns
F = 1 MHz
—
2000
—
ns
F = 100 MHz
—
35
—
ns
F = 725 MHz
—
5
—
ns
LVCMOS (12 mA drive to no load)
—
50
120
ps
LVPECL
—
30
75
ps
LVDS
—
40
85
ps
TPS
Differential
—
—
150
ps
PSRR
10 kHz sinusoidal noise
—
–72.5
—
dBc
100 kHz sinusoidal noise
—
–70
—
dBc
500 kHz sinusoidal noise
—
–67.5
—
dBc
1 MHz sinusoidal noise
—
–62.5
—
dBc
1
Minimum Input Pulse
Width
Propagation Delay
Output Enable Time
Output Disable Time
Output to Output
Skew2
Part to Part Skew3
Power Supply Noise
Rejection4
TW
TPLH,
TPHL
TEN
TDIS
TSK
Notes:
1. HCSL measurements were made with receiver termination. See Figure 7 on page 16.
2. Output to Output skew specified for outputs with an identical configuration.
3. Defined as skew between any output on different devices operating at the same supply voltage, temperature, and
equal load condition. Using the same type of inputs on each device, the outputs are measured at the differential cross
points.
4. Measured for 156.25 MHz carrier frequency. Sine-wave noise added to VDDOX (3.3 V = 100 mVPP) and noise spur
amplitude measured. See “AN491: Power Supply Rejection for Low-Jitter Clocks” for further details.
Rev. 1.0
7
Si53306
Table 11. Additive Jitter, Differential Clock Input
VDD
Output
Input1,2
Freq
(MHz)
Clock Format
Amplitude
VIN
(Single-Ended,
Peak-to-Peak)
Differential
Clock Format
20%-80% Slew
Rate (V/ns)
Additive Jitter
(fs rms, 12 kHz to
20 MHz)3
Typ
Max
3.3
725
Differential
0.15
0.637
LVPECL
45
65
3.3
725
Differential
0.15
0.637
LVDS
50
65
3.3
156.25
Differential
0.5
0.458
LVPECL
160
185
3.3
156.25
Differential
0.5
0.458
LVDS
150
200
2.5
725
Differential
0.15
0.637
LVPECL
45
65
2.5
725
Differential
0.15
0.637
LVDS
50
65
2.5
156.25
Differential
0.5
0.458
LVPECL
145
185
2.5
156.25
Differential
0.5
0.458
LVDS
145
195
Notes:
1. For best additive jitter results, use the fastest slew rate possible. See “AN766: Understanding and Optimizing Clock
Buffer’s Additive Jitter Performance” for more information.
2. AC-coupled differential inputs.
3. Measured differentially using a balun at the phase noise analyzer input. See Figure 1.
8
Rev. 1.0
Si53306
Table 12. Additive Jitter, Single-Ended Clock Input
VDD
Output
Input1,2
Freq
(MHz)
Clock Format
Amplitude
VIN
(single-ended,
peak to peak)
Additive Jitter
(fs rms, 12 kHz to
20 MHz)3
SE 20%-80%
Slew Rate
(V/ns)
Clock Format
Typ
Max
3.3
200
Single-ended
1.70
1
LVCMOS4
120
160
3.3
156.25
Single-ended
2.18
1
LVPECL
160
185
3.3
156.25
Single-ended
2.18
1
LVDS
150
200
3.3
156.25
Single-ended
2.18
1
LVCMOS4
130
180
2.5
200
Single-ended
1.70
1
LVCMOS5
120
160
2.5
156.25
Single-ended
2.18
1
LVPECL
145
185
2.5
156.25
Single-ended
2.18
1
LVDS
145
195
2.5
156.25
Single-ended
2.18
1
LVCMOS5
140
180
Notes:
1. For best additive jitter results, use the fastest slew rate possible. See “AN766: Understanding and Optimizing Clock
Buffer’s Additive Jitter Performance” for more information.
2. DC-coupled single-ended inputs.
3. Measured differentially using a balun at the phase noise analyzer input. See Figure 1.
4. Drive Strength: 12 mA, 3.3 V (SFOUT = 11). LVCMOS jitter is measured single-ended.
5. Drive Strength: 9 mA, 2.5 V (SFOUT = 11). LVCMOS jitter is measured single-ended.
PSPL 5310A
CLK SYNTH
SMA103A
50
Si533xx
DUT
Balun
PSPL 5310A
CLKx
AG E5052 Phase Noise
Analyzer
50ohm
/CLKx
50
Balun
Figure 1. Differential Measurement Method Using a Balun
Rev. 1.0
9
Si53306
Table 13. Thermal Conditions
Parameter
Symbol
Test Condition
Value
Unit
Thermal Resistance,
Junction to Ambient
JA
Still air
49.6
°C/W
Thermal Resistance,
Junction to Case
JC
Still air
32.3
°C/W
Table 14. Absolute Maximum Ratings
Parameter
Symbol
Storage Temperature
Min
Typ
Max
Unit
TS
–55
—
150
C
Supply Voltage
VDD
–0.5
—
3.8
V
Input Voltage
VIN
–0.5
—
VDD+ 0.3
V
Output Voltage
VOUT
—
—
VDD+ 0.3
V
ESD Sensitivity
HBM
—
—
2000
V
ESD Sensitivity
CDM
—
—
500
V
Peak Soldering
Reflow Temperature
TPEAK
—
—
260
C
—
—
125
C
Maximum Junction
Temperature
Test Condition
HBM, 100 pF, 1.5 k
Pb-Free; Solder reflow profile
per JEDEC J-STD-020
TJ
Note: Stresses beyond those listed in this table may cause permanent damage to the device. Functional operation
specification compliance is not implied at these conditions. Exposure to maximum rating conditions for extended
periods may affect device reliability.
10
Rev. 1.0
Si53306
2. Functional Description
The Si53306 is a low jitter, low skew 1:4 differential buffer. The device has a universal input that accepts most
common differential or LVCMOS input signals. The Si53306 features control pins for output enable, output signal
format selection and LVCMOS drive strength.
2.1. Universal, Any-Format Input
The universal input stage enables simple interfacing to a wide variety of clock formats, including LVPECL, lowpower LVPECL, LVCMOS, LVDS, HCSL, and CML. Tables 15 and 16 summarize the various ac- and dc-coupling
options supported by the device. For the best high-speed performance, the use of differential formats is
recommended. For both single-ended and differential input clocks, the fastest possible slew rate is recommended
as low slew rates can increase the noise floor and degrade jitter performance. Though not required, a minimum
slew rate of 0.75 V/ns is recommended for differential formats and 1.0 V/ns for single-ended formats. See “AN766:
Understanding and Optimizing Clock Buffer’s Additive Jitter Performance” for more information.
Table 15. LVPECL, LVCMOS, and LVDS Input Clock Options
LVPECL
LVCMOS
LVDS
AC-Couple
DC-Couple
AC-Couple
DC-Couple
AC-Couple
DC-Couple
1.8 V
N/A
N/A
No
No
Yes
No
2.5/3.3 V
Yes
Yes
No
Yes
Yes
Yes
Table 16. HCSL and CML Input Clock Options
HCSL
CML
AC-Couple
DC-Couple
AC-Couple
DC-Couple
1.8 V
No
No
Yes
No
2.5/3.3 V
Yes (3.3 V)
Yes (3.3 V)
Yes
No
0.1 µF
Si533xx
CLKx
100 
/CLKx
0.1 µF
Figure 2. Differential HCSL, LVPECL, Low-Power LVPECL, LVDS, CML AC-Coupled Input
Termination
VDD
1 k
VDDO= 3.3 V or 2.5 V
VDD
Si533xx
CMOS
Driver
CLKx
50
/CLKx
Rs
VTERM = VDD/2
1 k
VREF
Figure 3. LVCMOS DC-Coupled Input Termination
Rev. 1.0
11
Si53306
VDDO
DC Coupled LVPECL Termination Scheme 1
R1
VDD
R1
VDDO = 3.3V or 2.5V
Si533xx
CLKx
50
“Standard”
LVPECL
Driver
/CLKx
50
R2
VTERM = VDDO – 2V
R1 // R2 = 50 Ohm
R2
3.3V LVPECL: R1 = 127 Ohm, R2 = 82.5 Ohm
2.5V LVPECL: R1 = 250 Ohm, R2 = 62.5 Ohm
DC Coupled LVPECL Termination Scheme 2
VDD
VDDO = 3.3V or 2.5V
Si533xx
50
“Standard”
LVPECL
Driver
CLKx
/CLKx
50
50
50
VTERM = VDDO – 2V
DC Coupled LVDS Termination
VDD
VDDO = 3.3V or 2.5V
Si533xx
CLKx
50
Standard
LVDS
Driver
/CLKx
50
100
DC Coupled HCSL Source Termination Scheme
VDDO = 3.3V
33
Si533xx
50
Standard
HCSL Driver
VDD
CLKx
/CLKx
33
50
50
50
Note: 33 Ohm series termination is optional depending on the location of the receiver.
Figure 4. Differential DC-Coupled Input Terminations
12
Rev. 1.0
Si53306
2.2. Input Bias Resistors
Internal bias resistors ensure a differential output low condition in the event that the clock inputs are not connected.
The non-inverting input is biased with a 18.75 k pull-down to GND and a 75 k pull-up to VDD. The inverting input
is biased with a 75 k pull-up to VDD.
VDD
RPU
RPU
+
RPD
CLK0 or
CLK1
–
RPU = 75 k
RPD = 18.75 k
Figure 5. Input Bias Resistors
2.3. Universal, Any-Format Output Buffer
The Si53306 has highly flexible output drivers that support a wide range of clock signal formats, including LVPECL,
low power LVPECL, LVDS, CML, HCSL, and LVCMOS. SFOUT1 and SFOUT0 are 3-level inputs that can be pinstrapped to select the output clock signal formats. This feature enables the device to be used for format translation
in addition to clock distribution, minimizing the number of unique buffer part numbers required in a typical
application and simplifying design reuse. For EMI reduction applications, four LVCMOS drive strength options are
available for each VDDO setting.
Table 17. Output Signal Format Selection
SFOUT1
SFOUT0
VDDOX = 3.3 V
VDDOX = 2.5 V
VDDOX = 1.8 V
Open*
Open*
LVPECL
LVPECL
N/A
0
0
LVDS
LVDS
LVDS
0
1
LVCMOS, 24 mA drive
LVCMOS, 18 mA drive
LVCMOS, 12 mA drive
1
0
LVCMOS, 18 mA drive
LVCMOS, 12 mA drive
LVCMOS, 9 mA drive
1
1
LVCMOS, 12 mA drive
LVCMOS, 9 mA drive
LVCMOS, 6 mA drive
Open*
0
LVCMOS, 6 mA drive
LVCMOS, 4 mA drive
LVCMOS, 2 mA drive
Open*
1
LVPECL low power
LVPECL low power
N/A
0
Open*
CML
CML
CML
1
Open*
HCSL
N/A
N/A
*Note: SFOUTx are 3-level input pins. Tie low for “0” setting. Tie high for “1” setting. When left open, the pin floats to VDD/2.
Rev. 1.0
13
Si53306
2.4. Synchronous Output Enable
This buffer features a synchronous output enable (disable) feature. Output enable is sampled and synchronized on
the falling edge of the input clock. This feature prevents runt pulses from being generated when the outputs are
enabled or disabled.
When OE is low, Q is held low and Q is held high for differential output formats. For LVCMOS output format
options, both Q and Q are held low when OE is set low. The device outputs are enabled when the output enable pin
is unconnected. See Table 10, “AC Characteristics,” on page 6 for output enable and output disable times.
2.5. Output Enable Logic
All four outputs are controlled with a single output enable (OE) pin. Table 18 summarizes the input and output clock
based upon the state of the input clock and the OE pin.
Table 18. Output Enable Logic
CLK
OE1
Q2
L
H
L
H
H
H
X
L
L3
Notes:
1. Output enable active high
2. On the next negative transition of CLK.
3. Single-end: Q = low, Q = low
Differential: Q = low, Q = high
2.6. Power Supply (VDD and VDDO)
The buffer includes separate core (VDD) and output driver supplies (VDDOX). This feature allows the core to operate
at a lower voltage than VDDO, reducing current consumption in mixed supply applications. The core VDD supports
3.3 V, 2.5 V, or 1.8 V. Each output bank has its own VDDOX supply, supporting 3.3 V, 2.5 V, or 1.8 V.
14
Rev. 1.0
Si53306
2.7. Output Clock Termination Options
The recommended output clock termination options are shown below.
VDDO
DC Coupled LVPECL Termination Scheme 1
R1
R1
VDDO = 3.3V or 2.5V
Si533xx
VDD = VDDO
50
Q
LVPECL
Receiver
Qn
50
R2
VTERM = VDDO – 2V
R1 // R2 = 50 Ohm
R2
3.3V LVPECL: R1 = 127 Ohm, R2 = 82.5 Ohm
2.5V LVPECL: R1 = 250 Ohm, R2 = 62.5 Ohm
DC Coupled LVPECL Termination Scheme 2
VDDO = 3.3V or 2.5V
Si533xx
VDD = VDDO
50
Q
LVPECL
Receiver
Qn
50
50
50
VTERM = VDDO – 2V
VDDO
AC Coupled LVPECL Termination Scheme 1
R1
VDDO = 3.3V or 2.5V
Si533xx
R1
0.1 uF
VDD = 3.3V or 2.5V
50
Q
LVPECL
Receiver
Qn
50
0.1 uF
Rb
R2
Rb
R2
VBIAS = VDD – 1.3V
R1 // R2 = 50 Ohm
3.3V LVPECL: R1 = 82.5 Ohm, R2 = 127 Ohm, Rb = 120 Ohm
2.5V LVPECL: R1 = 62.5 Ohm, R2 = 250 Ohm, Rb = 90 Ohm
AC Coupled LVPECL Termination Scheme 2
V DDO = 3.3V or 2.5V
Si533xx
0.1 uF
V DD = 3.3V or 2.5V
50
Q
LVPECL
Receiver
Qn
50
0.1 uF
Rb
Rb
50
50
V BIAS = V DD – 1.3 V
3.3V LVPECL: Rb = 120 Ohm
2.5V LVPECL: Rb = 90 Ohm
Figure 6. LVPECL Output Termination
Rev. 1.0
15
Si53306
DC Coupled LVDS and Low-Power LVPECL Termination
VDDO = 3.3 V or 2.5 V, or 1.8 V (LVDS only)
Si533xx
VDD
50
Q
Standard
LVDS
Receiver
Qn
50
100
AC Coupled LVDS and Low-Power LVPECL Termination
VDDO = 3.3 V or 2.5 V or 1.8 V (LVDS only)
Si533xx
0.1 uF
VDD
50
Q
Standard
LVDS
Receiver
Qn
50
0.1 uF
100
AC Coupled CML Termination
VDDO = 3.3V or 2.5V or 1.8V
Si533xx
0.1 uF
VDD
50
Q
Standard
CML
Receiver
100
Qn
50
0.1 uF
DC Coupled HCSL Receiver Termination
VDDO = 3.3V
Si533xx
VDD
50
Q
Standard
HCSL
Receiver
Qn
50
50
50
DC Coupled HCSL Source Termination
VDDO = 3.3V
Si533xx
VDD
42.2
50
Q
Qn
42.2
50
86.6
Standard
HCSL
Receiver
86.6
Figure 7. LVDS, CML, HCSL, and Low-Power LVPECL Output Termination
16
Rev. 1.0
Si53306
CMOS
Receivers
Si533xx
CMOS Driver
Zout
Zo
Rs
50
Figure 8. LVCMOS Output Termination
Table 19. Recommended LVCMOS RS Series Termination
SFOUT1
SFOUT0
RS (ohms)
3.3 V
2.5 V
1.8 V
0
1
33
33
33
1
0
33
33
33
1
1
33
33
0
Open
0
0
0
0
2.7.1. LVCMOS Output Termination To Support 1.5V and 1.2V
LVCMOS clock outputs are natively supported at 1.8, 2.5, and 3.3V. However, 1.2V and 1.5V LVCMOS clock
outputs can be supported via a simple resistor divider network that will translate the buffer’s 1.8V output to a lower
voltage as shown in Figure 9 below.
VDDOx= 1.8V
R1
50
R2
LVCMOS
1.5V LVCMOS: R1 = 43 ohms, R2 = 300 ohms, IOUT = 12mA
1.2V LVCMOS: R1 = 58 ohms, R2 = 150 ohms, IOUT = 12mA
R1
50
R2
Figure 9. 1.5V and 1.2V LVCMOS Low-Voltage Output Termination
Rev. 1.0
17
Si53306
2.8. AC Timing Waveforms
TPHL
TSK
VPP/2
CLK
Q
VPP/2
QN
QM
VPP/2
VPP/2
TPLH
TSK
Propagation Delay
Output-Output Skew
TF
Q
80% VPP
20% VPP
Rise/Fall Time
Figure 10. AC Waveforms
18
80% VPP
20% VPP
Q
Rev. 1.0
TR
Si53306
2.9. Typical Phase Noise Performance
Each of the following three figures shows three phase noise plots superimposed on the same diagram.
Source Jitter: Reference clock phase noise.
Total Jitter (SE): Combined source and clock buffer phase noise measured as a single-ended output to the phase
noise analyzer and integrated from 12 kHz to 20 MHz.
Total Jitter (Diff): Combined source and clock buffer phase noise measured as a differential output to the phase
noise analyzer and integrated from 12 kHz to 20 MHz. The differential measurement as shown in each figure is
made using a balun. See Figure 1 on page 9.
Note: To calculate the total RMS phase jitter when adding a buffer to your clock tree, use the root-sum-square (RSS).
The total jitter is a measure of the source plus the buffer's additive phase jitter. The additive jitter (rms) of the buffer
can then be calculated (via root-sum-square addition).
Figure 11. Source Jitter (156.25 MHz)
Rev. 1.0
19
Si53306
Figure 12. Single-Ended Total Jitter (312.5 MHz)
20
Rev. 1.0
Si53306
Figure 13. Differential Total Jitter (625 MHz)
2.10. Power Supply Noise Rejection
The device supports on-chip supply voltage regulation to reject noise present on the power supply, simplifying low
jitter operation in real-world environments. This feature enables robust operation alongside FPGAs, ASICs and
SoCs and may reduce board-level filtering requirements. For more information, see “AN491: Power Supply
Rejection for Low Jitter Clocks”.
Rev. 1.0
21
Si53306
Q0
Q0
SFOUT0
6
7
8
Q3
SFOUT1
4
Q3
GND
5
3
GND
PAD
VDDO
CLK
13
2
14
CLK
15
1
16
VDD
OE
3. Pin Description: 16-Pin QFN
12
Q1
11
Q1
10
Q2
9
Q2
Table 20. Pin Description
22
Pin
Name
Type*
Description
1
VDD
P
Core voltage supply.
Bypass with 1.0 μF capacitor and place as close to the VDD
pin as possible.
2
CLK
I
Input clock.
3
CLK
I
Input clock (complement).
When the CLK is driven by a single-ended input, connect
CLK to VDD/2.
See Figure 1, “Differential Measurement Method Using a
Balun,” on page 9.
4
GND
GND
5
VDDO
P
Output voltage supply— All outputs (Q0 to Q3).
Bypass with 1.0 μF capacitor and place as close to the VDDO
pin as possible.
6
Q3
O
Output clock 3 (complement).
7
Q3
O
Output clock 3.
8
SFOUT1
I
Output signal format control pin 1.
Three-level input control. Internally biased at VDD/2. Can be
left floating or tied to ground or VDD.
Ground.
Rev. 1.0
Si53306
Table 20. Pin Description (Continued)
Pin
Name
Type*
Description
9
Q2
O
Output clock 2 (complement).
10
Q2
O
Output clock 2.
11
Q1
O
Output clock 1 (complement).
12
Q1
O
Output clock 1.
13
SFOUT0
I
Output signal format control pin 0.
Three-level input control. Internally biased at VDD/2. Can be
left floating or tied to ground or VDD.
14
Q0
O
Output clock 0 (complement).
15
Q0
O
Output clock 0.
16
OE
I
Output enable.
When OE = high, all outputs are enabled.
When OE = low, Q is held low, and Q is held high for differential formats.
For LVCMOS, both Q and Q are held low when OE is set low.
OE contains an internal pull-up resistor.
GND
Pad
GND
GND
Ground.
*Pin types are: I = input, O = output, P = power, GND = ground.
Rev. 1.0
23
Si53306
4. Ordering Guide
Part Number
Package
Pb-Free, ROHS-6
Temperature
Si53306-B-GM
16-QFN
Yes
–40 to 85 C
Si53301/4-EVB
Evaluation Board
Yes
—
Notes:
1. To buy, go to http://www.supplier-direct.com/silabs/Cart.aspx?supplierUVID=63410000&partnumber=Si53306-BGM&quantity=1&issample=0.
2. To sample, go to http://www.supplier-direct.com/silabs/Cart.aspx?supplierUVID=63410000&partnumber=Si53306-BGM&quantity=1&issample=1.
24
Rev. 1.0
Si53306
5. Package Outline
Figure 14 shows the package dimensions for the 3x3 mm 16-pin QFN package. Table 21 lists the values for the
dimensions shown in the illustration.
Figure 14. Si53306 3x3 mm 16-QFN Package Diagram
Table 21. Package Diagram Dimensions
Dimension
Min
Nom
Max
A
0.80
0.85
0.90
A1
0.00
0.02
0.05
b
0.18
0.25
0.30
D
D2
3.00 BSC.
1.65
1.70
e
0.50 BSC.
E
3.00 BSC.
1.75
E2
1.65
1.70
1.75
L
0.30
0.40
0.50
aaa
—
—
0.10
bbb
—
—
0.10
ccc
—
—
0.08
ddd
—
—
0.10
eee
—
—
0.05
Notes:
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing per ANSI Y14.5M-1994.
Rev. 1.0
25
Si53306
6. PCB Land Pattern
Figure 15 shows the PCB land pattern dimensions for the 3x3 mm 16-pin QFN package. Table 22 lists the values
for the dimensions shown in the illustration.
Figure 15. Si53306 3x3 mm 16-QFN Package Land Pattern
Table 22. PCB Land Pattern Dimensions
Dimension
mm
C1
3.00
C2
3.00
E
0.50
X1
0.30
Y1
0.80
X2
1.75
Y2
1.75
Notes:
General
1. All dimensions shown are in millimeters (mm).
2. This Land Pattern Design is based on the IPC-7351 guidelines.
3. All dimensions shown are at Maximum Material Condition (MMC). Least Material Condition (LMC) is
calculated based on a Fabrication Allowance of 0.05 mm.
Solder Mask Design
4. All metal pads are to be non-solder mask defined (NSMD). Clearance between the solder mask and
the metal pad is to be 60 µm minimum, all the way around the pad.
Stencil Design
5. A stainless steel, laser-cut and electro-polished stencil with trapezoidal walls should be used to assure
good solder paste release.
6. The stencil thickness should be 0.125 mm (5 mils).
7. The ratio of stencil aperture to land pad size should be 1:1 for all perimeter pads.
8. A 2x2 array of 0.65 mm square openings on a 0.90 mm pitch should be used for the center ground
pad.
Card Assembly
9. A No-Clean, Type-3 solder paste is recommended.
10. The recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body
Components.
26
Rev. 1.0
Si53306
7. Top Marking
7.1. Si53306 Top Marking
7.2. Top Marking Explanation
Mark Method:
Laser
Font Size:
0.635 mm (25 mils)
Right-Justified
Line 1 Marking:
Product ID
3306
Line 2 Marking:
TTTT = Mfg Code
Manufacturing Code from the Assembly Purchase
Order form.
Line 3 Marking
Circle = 0.5 mm Diameter
(Bottom-Left Justified)
Pin 1 Identifier
YWW = Date Code
Corresponds to the last digit of the current year (Y) and
the workweek (WW) of the mold date.
Rev. 1.0
27
Si53306
DOCUMENT CHANGE LIST
Revision 0.9 to Revision 1.0
Corrected
Improved
front-page block diagram.
performance specifications with more
detail.
Added additional information to clarify the use of the
voltage reference feature.
Added pin type description to Table 20, “Pin
Description,” on page 22.
Added low-voltage termination options for 1.2 V and
1.5 V LVCMOS support.
28
Rev. 1.0
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