020 -6 PMDPB70XPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -4.2 A - 66 79 mΩ Per transistor VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics (per transistor) RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 Transparent top view 8 D2 drain TR2 DFN2020-6 (SOT1118) 6 5 7 1 Graphic symbol 8 2 D2 D1 4 G1 G2 3 S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number Package PMDPB70XPE Name Description Version DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1118 4. Marking Table 4. Marking codes Type number Marking code PMDPB70XPE 2B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage ID drain current Per transistor -12 12 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -4.2 A VGS = -4.5 V; Tamb = 25 °C [1] - -3 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.1 A - -12 A [2] - 515 mW [1] - 1210 mW - 8330 mW - -1.3 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Source-drain diode IS source current PMDPB70XPE Product data sheet Tamb = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 [1] © NXP B.V. 2012. All rights reserved. 2 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 2000 V ESD maximum rating electrostatic discharge voltage VESD [3] HBM; C = 100 pF; R = 1.5 kΩ Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMDPB70XPE Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003871 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 100 μs tp = 1 ms -1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -102 -10 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 212 244 K/W [2] - 90 104 K/W [2] - 55 64 K/W - 11 15 K/W Per transistor Rth(j-a) Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003792 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 10 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-003793 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.25 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -2 A; Tj = 25 °C - 66 79 mΩ VGS = -4.5 V; ID = -2 A; Tj = 150 °C - 94 112 mΩ VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C - 98 123 mΩ VDS = -10 V; ID = -2 A; Tj = 25 °C - 7.3 - S - 5 7.5 nC - 1.1 - nC - 1.1 - nC RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = -10 V; ID = -2 A; VGS = -4.5 V; Tj = 25 °C VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 600 - pF - 103 - pF - 77 - pF - 7 - ns - 16 - ns turn-off delay time - 33 - ns fall time - 15 - ns - -0.7 -1.2 V VDS = -10 V; ID = -2 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode (per transistor) VSD source-drain voltage PMDPB70XPE Product data sheet IS = -0.5 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003872 -12 -3.5 V -4.5 V -8.0 V ID (A) -3.0 V 017aaa129 −10−3 VGS = -2.8 V ID (A) -2.5 V −10−4 -8 (1) (3) (2) -2.2 V −10−5 -4 -1.8 V 0 0 -1 -2 -3 -4 −10−6 0.0 VDS (V) −0.5 −1.0 VGS (V) − 1.5 Tj = 25 °C; VDS = -3 V Tj = 25 °C (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values aaa-003873 300 RDSon (mΩ) -1.8 V VGS = -2.2 V Fig 7. Sub-threshold drain current as a function of gate-source voltage aaa-003874 300 RDSon (mΩ) -2.5 V 200 200 -2.8 V Tj = 150 °C -3.0 V 100 100 -3.5 V -4.5 V Tj = 25 °C -8.0 V 0 0 0 -4 -8 -12 0 ID (A) Product data sheet -6 ID = -2 A Drain-source on-state resistance as a function of drain current; typical values PMDPB70XPE -4 VGS (V) Tj = 25 °C Fig 8. -2 Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003875 -12 aaa-003876 1.5 ID (A) a -8 1.0 -4 0.5 Tj = 150 °C Tj = 25 °C 0 0 -1 -2 -3 0.0 -60 0 60 120 VGS (V) 180 Tj (°C) VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-003877 -1.5 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-003878 103 Ciss VGS(th) (V) max C (pF) -1.0 typ 102 Coss Crss min -0.5 0.0 -60 0 60 120 180 10 -10-1 -1 Tj (°C) VDS (V) ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig 12. Gate-source threshold voltage as a function of junction temperature PMDPB70XPE Product data sheet -102 -10 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003879 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 2 4 6 QG (nC) ID = -2 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions aaa-003880 -5 IS (A) -4 -3 -2 -1 Tj = 150 °C Tj = 25 °C 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VDS (V) VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig 18. Package outline DFN2020-6 (SOT1118) PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) sot1118_fr Fig 19. Reflow soldering footprint for DFN2020-6 (SOT1118) PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMDPB70XPE v.1 20120620 Product data sheet - - PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of NXP Semiconductors. PMDPB70XPE Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 15 PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 June 2012 Document identifier: PMDPB70XPE