PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 2.2 kV ESD protection • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated, 100% solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -12 - 12 V ID drain current - - 12.9 A - 10 14 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 9 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 G 4 Transparent top view DFN2020MD-6 (SOT1220) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name PMPB10XNE Description Version DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 4. Marking Table 4. Marking codes Type number Marking code PMPB10XNE 1H 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 12.9 A VGS = 4.5 V; Tamb = 25 °C [1] - 9 A VGS = 4.5 V; Tamb = 100 °C [1] - 5.7 A - 36 A - 1.7 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 [1] © NXP B.V. 2012. All rights reserved 2 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET Symbol Parameter Conditions Tamb = 25 °C; t ≤ 5 s [1] Tsp = 25 °C Min Max Unit - 3.5 W - 12.5 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - 2 A HBM [2] - 2200 V ESD maximum rating VESD electrostatic discharge voltage [1] [2] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMPB10XNE Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 30 November 2012 25 © NXP B.V. 2012. All rights reserved 3 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa896 102 ID (A) tp = 10 µs Limit RDSon = VDS/ID 10 tp = 100 µs tp = 1 ms 1 tp = 10 ms DC; Tsp = 25 °C 10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] PMPB10XNE Product data sheet Min Typ Max Unit [1] - 235 270 K/W [2] - 67 74 K/W [2] - 33 36 K/W - 5 10 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 4 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa542 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 10 0.25 0.2 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 102 10 103 tp (s) 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 5 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET Symbol Parameter RDSon drain-source on-state resistance Conditions Min Typ Max Unit VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; ID = 9 A; Tj = 25 °C - 10 14 mΩ VGS = 4.5 V; ID = 9 A; Tj = 150 °C - 15 21 mΩ VGS = 2.5 V; ID = 8 A; Tj = 25 °C - 12 18 mΩ VGS = 1.8 V; ID = 3.7 A; Tj = 25 °C - 16 25 mΩ gfs forward transconductance VDS = 10 V; ID = 9 A; Tj = 25 °C - 60 - S RG gate resistance f = 1 MHz - 2 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 6 A; VGS = 4.5 V; - 23 34 nC QGS gate-source charge Tj = 25 °C - 2.6 - nC QGD gate-drain charge - 4.5 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 2175 - pF Coss output capacitance Tj = 25 °C - 235 - pF Crss reverse transfer capacitance - 205 - pF td(on) turn-on delay time VDS = 10 V; ID = 6 A; VGS = 4.5 V; - 13 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 35 - ns td(off) turn-off delay time - 54 - ns tf fall time - 50 - ns - 0.6 1.2 V Source-drain diode VSD source-drain voltage IS = 2 A; VGS = 0 V; Tj = 25 °C 017aaa897 36 1.7 V 4.5 V 2.5 V ID (A) 017aaa898 10-2 ID (A) 10-3 1.6 V 24 1.5 V 10-4 min typ max 1.4 V 12 10-5 1.3 V 0 Fig. 6. VGS = 1.2 V 0 1 2 3 VDS (V) 4 10-6 0.0 0.4 0.8 VGS (V) 1.2 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Subthreshold drain current as a function of gate-source voltage PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 6 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa899 50 RDSon (mΩ) 1.6 V 40 1.4 V RDSon (mΩ) 1.8 V 1.7 V 017aaa900 50 40 1.9 V 30 30 20 20 Tj = 150 °C 10 Tj = 25 °C 2.5 V 10 0 VGS = 4.5 V 0 8 16 24 ID (A) 0 32 Tj = 25 °C Fig. 8. 0 1 2 3 4 VGS (V) 5 ID = 9 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9. 017aaa901 36 Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa902 1.6 a ID (A) 1.4 24 1.2 1.0 12 Tj = 150 °C 0 0.0 0.5 1.0 Tj = 25 °C 1.5 VGS (V) 0.8 0.6 -60 2.0 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMPB10XNE Product data sheet 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 7 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa903 1.2 017aaa904 104 VGS(th) (V) C (pF) max Ciss 0.8 103 typ 0.4 Coss min Crss 0.0 -60 0 60 120 Tj (°C) 102 10-1 180 10 VDS (V) 102 f = 1 MHz; VGS = 0 V ID = 0.25 mA; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa905 4.5 1 017aaa906 3 VGS (V) IS (A) 3.0 2 1.5 1 Tj = 150 °C 0.0 0 5 10 15 0 0.0 20 25 QG (nC) ID = 9 A; VDS = 10 V; Tamb = 25 °C Product data sheet 0.4 0.6 VSD (V) 0.8 VGS = 0 V Fig. 14. Gate-source voltage as a function of gate charge; typical values PMPB10XNE 0.2 Tj = 25 °C Fig. 15. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 8 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 16. Duty cycle definition 9. Package outline 0.51 0.61 0.2 0.3 1.9 2.1 1.0 1.2 0.2 0.3 3 4 2 5 1 6 1.1 1.3 1.9 2.1 Dimensions in mm 0.25 0.35 0.65 12-04-30 Fig. 17. Package outline DFN2020MD-6 (SOT1220) PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 9 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 18. Reflow soldering footprint for DFN2020MD-6 (SOT1220) PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 10 / 14 PMPB10XNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB10XNE v.1 20121130 Product data sheet - - PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Test information ..................................................... 9 9 Package outline ..................................................... 9 10 Soldering .............................................................. 10 11 Revision history ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 November 2012 PMPB10XNE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012. All rights reserved 14 / 14