Si4953DY Vishay Siliconix Dual P-Channel 30-V(D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D 100% Rg Tested rDS(on) (W) ID (A) 0.053 @ VGS = - 10 V - 4.9 0.095 @ VGS = - 4.5 V - 3.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 Ordering Information: Si4953DY Si4953DY-T1 (with Tape and Reel) D1 P-Channel MOSFET D2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 70_C Operating Junction and Storage Temperature Range V - 4.9 ID - 3.9 IDM - 30 IS - 1.7 TA = 25_C Maximum Power Dissipationa Unit A 2.0 PD 1.3 W TJ, Tstg - 55 to 150 _C Symbol Limit Unit RthJA 62.5 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com Document Number: 70153 S-31726—Rev. E, 18-Aug-03 www.vishay.com 1 Si4953DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max VGS(th) VDS = VGS, ID = - 250 mA -1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55_C - 25 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VDS v - 5 V, VGS = - 10 V V - 20 mA A VGS = - 10 V, ID = - 4.9 A 0.043 0.053 VGS = - 4.5 V, ID = - 3.6 A 0.070 0.095 gfs VDS = - 15 V, ID = - 4.9 A 10 VSD IS = - 1.7 A, VGS = 0 V 0.8 - 1.2 16 25 rDS(on) DS( ) nA W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A Rg tr Fall Time tf Source-Drain Reverse Recovery Time trr nC 2 2 td(on) td(off) 5 VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W IF = - 1.7 A, di/dt = 100 A/ms 7.1 9 15 13 20 25 40 15 25 60 90 W ns Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70153 S-31726—Rev. E, 18-Aug-03 Si4953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10, 9, 8, 7, 6 V 24 TC = - 55_C 25_C 24 5V I D - Drain Current (A) I D - Drain Current (A) 125_C 18 12 4V 6 2, 1 V 0 0.0 18 12 6 3V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 VDS - Drain-to-Source Voltage (V) 0.16 1200 VGS = 4.5 V VGS = 10 V Ciss 900 600 Coss 300 0.04 0.00 Crss 0 0 6 12 18 24 30 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 10 1.75 VDS = 15 V ID = 4.9 A 8 r DS(on) - On-Resistance ( Ω ) (Normalized) V GS - Gate-to-Source Voltage (V) 8 Capacitance 1500 C - Capacitance (pF) r DS(on) - On-Resistance ( Ω ) On-Resistance vs. Drain Current 0.08 6 VGS - Gate-to-Source Voltage (V) 0.20 0.12 4 6 4 2 0 0 4 8 12 Qg - Total Gate Charge (nC) Document Number: 70153 S-31726—Rev. E, 18-Aug-03 16 20 1.50 VGS = 10 V ID = 4.9 A 1.25 1.00 0.75 0.50 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.60 r DS(on) - On-Resistance ( Ω ) 0.75 I S - Source Current (A) 20 TJ = 150_C TJ = 25_C ID = 4.9 A 0.45 0.30 0.15 0.00 1 0.3 0.5 0.7 0.9 1.1 0 1.3 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.7 50 0.5 40 ID = 250 µA 0.3 Power (W) V GS(th) Variance (V) 2 0.1 - 0.1 30 20 10 - 0.3 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.10 1.00 TJ - Temperature (_C) 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70153 S-31726—Rev. E, 18-Aug-03