Data Sheet

TO
-2
20A
B
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
17 October 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
•
•
High efficiency due to low switching and conduction losses
Improved dynamic avalanche performance
Suitable for standard level gate drive
3. Applications
•
•
•
•
DC-to-DC converters
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
100
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
269
W
Tj
junction temperature
-55
-
175
°C
-
-
12
mΩ
-
5.4
6.8
mΩ
-
36
-
nC
-
125
-
nC
[1]
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 15; Fig. 14
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
-
316
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
[1]
Vsup = 100 V; unclamped; RGS = 50 Ω
Continuous current is limited by package
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
mbb076
S
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
PSMN7R0-100PS
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN7R0-100PS
PSMN7R0-100PS
PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
-20
20
V
ID
drain current
-
85
A
-
100
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
[1]
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
475
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
269
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
100
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
475
A
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
316
mJ
[1]
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1]
PSMN7R0-100PS
Product data sheet
Vsup = 100 V; unclamped; RGS = 50 Ω
Continuous current is limited by package
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
003aad558
150
ID
(A)
Pder
(%)
100
80
(1)
50
0
Fig. 1.
03aa16
120
40
0
50
10 0
0
150
200
Tmb (°C)
Continuous drain current as a function of
mounting base temperature
Fig. 2.
0
50
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
003aad559
103
ID
(A)
Limit RDSon = V DS / ID
tp = 10 µ s
102
100 µ s
10
DC
1 ms
10 ms
1
100 ms
10-1
Fig. 3.
1
102
10
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.3
0.56
K/W
PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
vertical in free air
Min
Typ
Max
Unit
-
60
-
K/W
003aad560
1
Zth (j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
10-2
0.02
P
tp
T
δ=
10-3
single shot
tp
10-4
10-6
Fig. 4.
10-5
10-4
10-3
10-2
10-1
t
T
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
90
-
-
V
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
100
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
-
-
V
2
3
4
V
-
-
4.6
V
VDS = 100 V; VGS = 0 V; Tj = 125 °C
-
-
150
µA
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.08
5
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 15 A; Tj = 100 °C;
-
-
12
mΩ
-
15
19
mΩ
Static characteristics
V(BR)DSS
VGS(th)
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
Fig. 12
PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; ID = 15 A; Tj = 25 °C;
-
5.4
6.8
mΩ
f = 1 MHz
-
0.74
-
Ω
ID = 25 A; VDS = 50 V; VGS = 10 V;
-
125
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
100
-
nC
ID = 25 A; VDS = 50 V; VGS = 10 V;
-
28
-
nC
-
19.4
-
nC
-
9
-
nC
-
36
-
nC
Fig. 13
RG
internal gate
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
Fig. 14; Fig. 15
QGS
gate-source charge
Fig. 15; Fig. 14
QGS(th)
pre-threshold gatesource charge
QGS(th-pl)
post-threshold gatesource charge
QGD
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15; Fig. 14
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; Fig. 15; Fig. 14
-
4.3
-
V
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
-
6686
-
pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
438
-
pF
Crss
reverse transfer
capacitance
-
272
-
pF
td(on)
turn-on delay time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
-
34.6
-
ns
tr
rise time
RG(ext) = 4.7 Ω; Tj = 25 °C
-
45.6
-
ns
td(off)
turn-off delay time
-
103.9
-
ns
tf
fall time
-
49.5
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.8
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
-
64
-
ns
recovered charge
VDS = 50 V
-
167
-
nC
Qr
PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
003a a d562
300
20
ID
(A)
6
C
(pF)
100 00
10
240
5
180
4.5
4000
VGS (V) = 4
0
1
2
3
V DS (V)
2000
4
Output characteristics: drain current as a
Fig. 6.
function of drain-source voltage; typical values
003a a d572
24 0
0
5
10
15
20
VGS (V)
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003a a d568
60
ID
(A)
gfs
(S )
18 0
45
12 0
30
60
15
0
Fig. 7.
Crs s
6000
60
Fig. 5.
Cis s
8000
120
0
003a a d566
120 00
5.5
0
50
1 00
1 50
2 00
0
2 50
ID (A)
Forward transconductance as a function of
drain current; typical values
PSMN7R0-100PS
Product data sheet
Fig. 8.
Tj = 17 5 °C
Tj = 2 5 °C
0
4
VGS (V)
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
003a a d571
40
003aad280
5
VGS(th)
(V)
RDS on
(mΩ)
4
30
max
3
typ
20
2
10
0
Fig. 9.
min
1
0
5
10
15
VGS (V)
0
- 60
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
ID
(A)
min
10- 2
typ
60
120
Tj (°C)
180
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
03aa35
10- 1
0
003aad774
3.2
a
max
2.4
10- 3
1.6
10- 4
0.8
10- 5
10- 6
0
2
4
VGS (V)
0
-60
6
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
PSMN7R0-100PS
Product data sheet
0
60
120
Tj (°C)
180
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
003a a d563
20
VGS
(V)
VGS (V) = 4.5
RDS on
(mΩ)
003aad569
10
80 V
8
15
20 V
6
VDS = 50 V
10
4
5
6
5
0
10
0
20
40
60
80
2
20
0
1 00
ID (A)
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
0
50
100
150
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
003aad567
104
C
(pF)
VDS
QG (nC)
Ciss
ID
VGS(pl)
VGS(th)
103
Coss
VGS
QGS1
QGS2
QGS
QGD
QG(tot)
Crss
003aaa508
Fig. 15. Gate charge waveform definitions
102
10-1
1
10
VDS (V)
102
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
003a a d570
100
IS
(A)
80
60
Tj = 175 °C
40
2 5 °C
20
0
0
0 .3
0.6
0.9
VS D (V)
1.2
Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig. 18. Package outline TO-220AB (SOT78)
PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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PSMN7R0-100PS
Product data sheet
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PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN7R0-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
13 / 14
PSMN7R0-100PS
NXP Semiconductors
N-channel 100V 6.8 mΩ standard level MOSFET in TO220.
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Package outline ................................................... 11
12
12.1
12.2
12.3
12.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 October 2013
PSMN7R0-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 October 2013
© NXP N.V. 2013. All rights reserved
14 / 14