PSMN8R5-100XS N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction losses • Isolated package • Suitable for standard level gate drive 1.3 Applications • AC-to-DC power supply equipment • Motor control • Server power supplies • Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 49 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 55 W VGS = 10 V; ID = 10 A; Tj = 25 °C; 4.5 6.4 8.5 mΩ - 11.18 14.9 mΩ Static characteristics RDSon drain-source on-state resistance Fig. 12; Fig. 13 VGS = 10 V; ID = 10 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 10 A; VDS = 50 V; - 30 - nC QG(tot) total gate charge Fig. 14; Fig. 15 - 100 - nC Scan or click this QR code to view the latest information for this product PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; Tj(init) = 25 °C; ID = 49 A; - - 439 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Vsup ≤ 100 V; unclamped; RGS = 50 Ω; Fig. 3 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb Simplified outline Graphic symbol D mb G mounting base; isolated S mbb076 1 2 3 TO-220F (SOT186A) 3. Ordering information Table 3. Ordering information Type number Package PSMN8R5-100XS Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 4. Marking Table 4. Marking codes Type number Marking code PSMN8R5-100XS PSMN8R5-100XS 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V PSMN8R5-100XS Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 2 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) Symbol Parameter Conditions Min Max Unit VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - 49 A VGS = 10 V; Tmb = 100 °C; Fig. 1 - 34.6 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 196 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 55 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 46 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 196 A VGS = 10 V; Tj(init) = 25 °C; ID = 49 A; - 439 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 100 V; unclamped; RGS = 50 Ω; Fig. 3 003aak428 50 ID (A) 03aa16 120 Pder (%) 40 80 30 20 40 10 0 Fig. 1. 0 50 100 150 Tmb (° C) 0 200 Continuous drain current as a function of mounting base temperature PSMN8R5-100XS Product data sheet Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 29 November 2012 50 © NXP B.V. 2012. All rights reserved 3 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 003aak429 102 IAL (A) (1) 10 (2) 1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time 003aak430 103 ID (A) Limit RDSon = V DS / ID 102 tp =10 µ s 100 µ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig. 4. 1 10 102 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 2.5 2.73 K/W Rth(j-a) thermal resistance from junction to ambient - 55 - K/W PSMN8R5-100XS Product data sheet vertical in free air All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 4 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 003aak427 10 Z th(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 10-1 0.02 single shot 10-2 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 7. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Min Typ Max Unit Cisol isolation capacitance - 10 - pF Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal waveform; clean and dust free - - 2500 V Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2.4 3 4 V 1 - - V - - 4.5 V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA VDS = 100 V; VGS = 0 V; Tj = 100 °C - - 20 µA [1] Conditions [1] f = 1 MHz 8. Characteristics Table 8. Characteristics Symbol Parameter Static characteristics V(BR)DSS VGS(th) Fig. 10; Fig. 11 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 IDSS drain leakage current PSMN8R5-100XS Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 5 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 10 A; Tj = 25 °C; 4.5 6.4 8.5 mΩ - 11.18 14.9 mΩ - 16.95 22.6 mΩ f = 1 MHz 0.36 0.71 1.42 Ω RDSon drain-source on-state resistance Fig. 12; Fig. 13 VGS = 10 V; ID = 10 A; Tj = 100 °C; Fig. 13 VGS = 10 V; ID = 10 A; Tj = 175 °C; Fig. 13 RG internal gate resistance (AC) Dynamic characteristics QG(tot) total gate charge ID = 10 A; VDS = 50 V; VGS = 10 V; - 100 - nC QGS gate-source charge Fig. 14; Fig. 15 - 19 - nC QGS(th) pre-threshold gatesource charge - 14 - nC QGS(th-pl) post-threshold gatesource charge - 5 - nC QGD gate-drain charge - 30 - nC VGS(pl) gate-source plateau voltage ID = 10 A; VDS = 50 V; Fig. 14; Fig. 15 - 4 - V Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; - 5512 - pF - 380 - pF - 256 - pF Tj = 25 °C; Fig. 16; Fig. 17 Coss output capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 16 Crss reverse transfer capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; turn-on delay time VDS = 50 V; RL = 5 Ω; VGS = 10 V; - 21.5 - ns tr rise time RG(ext) = 5 Ω; Tj = 25 °C - 30 - ns td(off) turn-off delay time - 83 - ns tf fall time - 40 - ns td(on) Tj = 25 °C; Fig. 16; Fig. 17 Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 18 - 0.77 1.2 V trr reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; - 53 - ns recovered charge VDS = 50 V - 124 - nC Qr PSMN8R5-100XS Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 6 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 003aah739 240 6 VGS (V) = 10 ID (A) 003aak431 20 RDSon (mΩ ) 5.5 180 15 5 120 10 60 5 4.5 0 4 0 2 4 0 6 VDS(V) Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. 003aak425 5 10 15 V (V) 20 GS Drain-source on-state resistance as a function of gate-source voltage; typical values Output characteristics; drain current as a function of drain-source voltage; typical values 120 0 003aah742 250 ID (A) gfs (S) 200 90 150 60 100 30 Tj = 25 °C 50 0 Fig. 8. Tj = 175 °C 0 80 160 240 320 ID (A) 0 400 Forward transconductance as a function of drain current; typical values PSMN8R5-100XS Product data sheet Fig. 9. 0 2 6 8 VGS (V) 10 Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 November 2012 4 © NXP B.V. 2012. All rights reserved 7 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 003aah027 5 VGS(th) (V) ID (A) max 4 10-2 3 typ 10-3 2 min 10-4 typ min max 10-5 1 0 -60 0 60 120 T j (°C) 10-6 180 Fig. 10. Gate-source threshold voltage as a function of junction temperature 4.5 20 2 4 VGS (V) 6 003aag818 3 a 5.5 5 0 Fig. 11. Sub-threshold drain current as a function of gate-source voltage 003aak422 25 RDSon (mΩ ) 2.4 15 1.8 6 10 1.2 VGS (V) = 10 5 0 003aah028 10-1 0 80 160 ID (A) 0.6 0 -60 240 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values PSMN8R5-100XS Product data sheet 0 60 120 Tj (°C) 180 Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 8 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 003aak432 10 VDS VGS (V) ID 8 VGS(pl) 50 V 20 V 6 VGS(th) VGS V DS = 80 V 4 QGS1 QGS2 QGS QGD QG(tot) 2 003aaa508 0 Fig. 14. Gate charge waveform definitions 0 40 80 QG (nC) 120 Fig. 15. Gate-source voltage as a function of gate charge; typical values 003aak423 104 C (pF) 003aak424 12000 C (pF) Ciss Ciss 8000 103 Coss Crss 4000 Crss 102 10-1 1 10 VDS (V) 0 102 0 4 8 VGS (V) 12 Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Input and reverse transfer capacitances as a as a function of drain-source voltage; typical function of gate-source voltage, typical values values PSMN8R5-100XS Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 9 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 003aah749 400 IS (A) 320 240 160 Tj = 175° C 80 0 Tj = 25 °C 0 0.4 0.8 1.2 V SD (V) 1.6 Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN8R5-100XS Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 10 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) 9. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 19. Package outline TO-220F (SOT186A) PSMN8R5-100XS Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 11 / 14 PSMN8R5-100XS NXP Semiconductors N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A) In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 10. Legal information 10.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Isolation characteristics ........................................5 8 Characteristics ....................................................... 5 9 Package outline ................................................... 11 10 10.1 10.2 10.3 10.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 November 2012 PSMN8R5-100XS Product data sheet All information provided in this document is subject to legal disclaimers. 29 November 2012 © NXP B.V. 2012. All rights reserved 14 / 14