Data Sheet

PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F
(SOT186A)
29 November 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to
175C. This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
• High efficiency due to low switching and conduction losses
• Isolated package
• Suitable for standard level gate drive
1.3 Applications
• AC-to-DC power supply equipment
• Motor control
• Server power supplies
• Synchronous rectification
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
49
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
55
W
VGS = 10 V; ID = 10 A; Tj = 25 °C;
4.5
6.4
8.5
mΩ
-
11.18
14.9
mΩ
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 10 A; VDS = 50 V;
-
30
-
nC
QG(tot)
total gate charge
Fig. 14; Fig. 15
-
100
-
nC
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A;
-
-
439
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
Fig. 3
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
Simplified outline
Graphic symbol
D
mb
G
mounting base; isolated
S
mbb076
1 2 3
TO-220F (SOT186A)
3. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN8R5-100XS
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
4. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN8R5-100XS
PSMN8R5-100XS
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
PSMN8R5-100XS
Product data sheet
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Conditions
Min
Max
Unit
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
49
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
-
34.6
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
196
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
55
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
46
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
196
A
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A;
-
439
mJ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
Fig. 3
003aak428
50
ID
(A)
03aa16
120
Pder
(%)
40
80
30
20
40
10
0
Fig. 1.
0
50
100
150
Tmb (° C)
0
200
Continuous drain current as a function of
mounting base temperature
PSMN8R5-100XS
Product data sheet
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
003aak429
102
IAL
(A)
(1)
10
(2)
1
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
Avalanche rating; avalanche current as a function of avalanche time
003aak430
103
ID
(A)
Limit RDSon = V DS / ID
102
tp =10 µ s
100 µ s
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
Fig. 4.
1
10
102
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
2.5
2.73
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
-
55
-
K/W
PSMN8R5-100XS
Product data sheet
vertical in free air
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
003aak427
10
Z th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10-1
0.02
single shot
10-2
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Isolation characteristics
Table 7.
Isolation characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Cisol
isolation capacitance
-
10
-
pF
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
sinusoidal waveform; clean and dust
free
-
-
2500
V
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
90
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.4
3
4
V
1
-
-
V
-
-
4.5
V
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.02
1
µA
VDS = 100 V; VGS = 0 V; Tj = 100 °C
-
-
20
µA
[1]
Conditions
[1]
f = 1 MHz
8. Characteristics
Table 8.
Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
VGS(th)
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
drain leakage current
PSMN8R5-100XS
Product data sheet
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 10 A; Tj = 25 °C;
4.5
6.4
8.5
mΩ
-
11.18
14.9
mΩ
-
16.95
22.6
mΩ
f = 1 MHz
0.36
0.71
1.42
Ω
RDSon
drain-source on-state
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 13
VGS = 10 V; ID = 10 A; Tj = 175 °C;
Fig. 13
RG
internal gate
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 10 A; VDS = 50 V; VGS = 10 V;
-
100
-
nC
QGS
gate-source charge
Fig. 14; Fig. 15
-
19
-
nC
QGS(th)
pre-threshold gatesource charge
-
14
-
nC
QGS(th-pl)
post-threshold gatesource charge
-
5
-
nC
QGD
gate-drain charge
-
30
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 10 A; VDS = 50 V; Fig. 14; Fig. 15
-
4
-
V
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
-
5512
-
pF
-
380
-
pF
-
256
-
pF
Tj = 25 °C; Fig. 16; Fig. 17
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
Crss
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
turn-on delay time
VDS = 50 V; RL = 5 Ω; VGS = 10 V;
-
21.5
-
ns
tr
rise time
RG(ext) = 5 Ω; Tj = 25 °C
-
30
-
ns
td(off)
turn-off delay time
-
83
-
ns
tf
fall time
-
40
-
ns
td(on)
Tj = 25 °C; Fig. 16; Fig. 17
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 18
-
0.77
1.2
V
trr
reverse recovery time
IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
53
-
ns
recovered charge
VDS = 50 V
-
124
-
nC
Qr
PSMN8R5-100XS
Product data sheet
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
003aah739
240
6
VGS (V) = 10
ID
(A)
003aak431
20
RDSon
(mΩ )
5.5
180
15
5
120
10
60
5
4.5
0
4
0
2
4
0
6
VDS(V)
Tj = 25 °C; tp = 300 μs
Fig. 6.
Fig. 7.
003aak425
5
10
15 V (V) 20
GS
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Output characteristics; drain current as a
function of drain-source voltage; typical values
120
0
003aah742
250
ID
(A)
gfs
(S)
200
90
150
60
100
30
Tj = 25 °C
50
0
Fig. 8.
Tj = 175 °C
0
80
160
240
320
ID (A)
0
400
Forward transconductance as a function of
drain current; typical values
PSMN8R5-100XS
Product data sheet
Fig. 9.
0
2
6
8
VGS (V)
10
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
003aah027
5
VGS(th)
(V)
ID
(A)
max
4
10-2
3
typ
10-3
2
min
10-4
typ
min
max
10-5
1
0
-60
0
60
120
T j (°C)
10-6
180
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
4.5
20
2
4
VGS (V)
6
003aag818
3
a
5.5
5
0
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
003aak422
25
RDSon
(mΩ )
2.4
15
1.8
6
10
1.2
VGS (V) = 10
5
0
003aah028
10-1
0
80
160
ID (A)
0.6
0
-60
240
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN8R5-100XS
Product data sheet
0
60
120
Tj (°C)
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
003aak432
10
VDS
VGS
(V)
ID
8
VGS(pl)
50 V
20 V
6
VGS(th)
VGS
V DS = 80 V
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
Fig. 14. Gate charge waveform definitions
0
40
80
QG (nC)
120
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aak423
104
C
(pF)
003aak424
12000
C
(pF)
Ciss
Ciss
8000
103
Coss
Crss
4000
Crss
102
10-1
1
10
VDS (V)
0
102
0
4
8
VGS (V)
12
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Input and reverse transfer capacitances as a
as a function of drain-source voltage; typical
function of gate-source voltage, typical values
values
PSMN8R5-100XS
Product data sheet
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
003aah749
400
IS
(A)
320
240
160
Tj = 175° C
80
0
Tj = 25 °C
0
0.4
0.8
1.2
V SD (V)
1.6
Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN8R5-100XS
Product data sheet
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
9. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
A
P
A1
q
D1
mounting
base
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
w M
c
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
(1)
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
(2)
T
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are # 2.5 × 0.8 max. depth
OUTLINE
VERSION
SOT186A
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
06-02-14
3-lead TO-220F
Fig. 19. Package outline TO-220F (SOT186A)
PSMN8R5-100XS
Product data sheet
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PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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PSMN8R5-100XS
Product data sheet
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tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
10.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN8R5-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2012
© NXP B.V. 2012. All rights reserved
13 / 14
PSMN8R5-100XS
NXP Semiconductors
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
11. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................2
6
Thermal characteristics .........................................4
7
Isolation characteristics ........................................5
8
Characteristics ....................................................... 5
9
Package outline ................................................... 11
10
10.1
10.2
10.3
10.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 November 2012
PSMN8R5-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2012
© NXP B.V. 2012. All rights reserved
14 / 14