Data Sheet

D2
PA
K
PSMN4R4-80BS
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC - DC converters
 Motor control
 Load switching
 Server power supplies
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
80
V
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
-
-
100
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
-
306
W
Tj
junction temperature
-55
-
175
°C
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 13; see Figure 6
-
6.27
7.4
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 6
-
3.8
4.5
mΩ
[1]
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 40 V;
see Figure 14; see Figure 15
-
25
-
nC
-
125
-
nC
-
-
591
mJ
Avalanche ruggedness
EDS(AL)S
[1]
non-repetitive drain-source
avalanche energy
Continuous current is limited by package
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 80 V;
RGS = 50 Ω; unclamped
PSMN4R4-80BS
NXP Semiconductors
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain[1]
3
S
source
mb
D
drain
Simplified outline
Graphic symbol
mb
D
G
mbb076
S
2
1
3
SOT404 (D2PAK)
[1]
It is not possible to make connection to pin 2
3. Ordering information
Table 3.
Ordering information
Type number
PSMN4R4-80BS
Package
Name
Description
Version
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
4. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN4R4-80BS
PSMN4R4-80BS
PSMN4R4-80BS
Product data sheet
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
80
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
80
V
VGS
gate-source voltage
ID
drain current
-20
20
V
VGS = 10 V; Tmb = 100 °C; see Figure 1
[1]
-
100
A
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1]
-
100
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C;
see Figure 3
-
680
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
306
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
100
A
-
680
A
-
591
mJ
Source-drain diode
[1]
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
non-repetitive drain-source avalanche VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
energy
Vsup ≤ 80 V; RGS = 50 Ω; unclamped
EDS(AL)S
[1]
Continuous current is limited by package
003aad091
200
ID
(A)
03aa16
120
Pder
(%)
150
80
100
(1)
40
50
0
0
0
Fig 1.
50
100
150
Tmb ( C)
200
Product data sheet
50
100
150
200
Tmb (°C)
Normalized continuous drain current as a
function of mounting base temperature
PSMN4R4-80BS
0
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
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© NXP B.V. 2012. All rights reserved.
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PSMN4R4-80BS
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
003aad317
103
Limit RDSon = VDS / ID
ID
(A)
tp = 10 μs
102
100 μs
(1)
10
DC
1 ms
10 ms
100 ms
1
10-1
10-1
Fig 3.
1
10
102
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain source voltage
PSMN4R4-80BS
Product data sheet
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PSMN4R4-80BS
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
see Figure 4
-
0.23
0.49
K/W
Rth(j-a)
thermal resistance from junction to ambient
Minimum footprint;
mounted on a printed
circuit board
-
50
-
K/W
003aad100
1
Zth (j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
10
-2
0.05
0.02
δ=
P
tp
T
10-3
single shot
t
tp
T
10-4
10-6
Fig 4.
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R4-80BS
Product data sheet
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Rev. 1 — 22 March 2012
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PSMN4R4-80BS
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
7. Characteristics
Table 7.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
73
-
-
V
Static characteristics
V(BR)DSS
drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
RG
ID = 250 µA; VGS = 0 V; Tj = 25 °C
80
-
-
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
1
-
-
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
-
-
4.6
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
2
3
4
V
VDS = 80 V; VGS = 0 V; Tj = 25 °C
-
0.02
10
µA
VDS = 80 V; VGS = 0 V; Tj = 125 °C
-
-
200
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 13; see Figure 6
-
9.12
10.7
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 13; see Figure 6
-
6.27
7.4
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 6
-
3.8
4.5
mΩ
f = 1 MHz
-
1
-
Ω
112
-
nC
internal gate resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
125
-
nC
gate-source charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
-
QGS
-
39
-
nC
QGS(th)
pre-threshold gate-source
charge
-
24
-
nC
QGS(th-pl)
post-threshold gate-source
charge
-
15
-
nC
QGD
gate-drain charge
-
25
-
nC
VGS(pl)
gate-source plateau voltage
ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
-
4.65
-
V
Ciss
input capacitance
-
8400
-
pF
Coss
output capacitance
VDS = 40 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
700
-
pF
Crss
reverse transfer capacitance
-
336
-
pF
VDS = 40 V; RL = 0.5 Ω; VGS = 10 V;
RG(ext) = 1.5 Ω
-
34.7
-
ns
-
38.1
-
ns
turn-off delay time
-
66
-
ns
fall time
-
18.4
-
ns
td(on)
turn-on delay time
tr
rise time
td(off)
tf
PSMN4R4-80BS
Product data sheet
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
Table 7.
Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
0.8
1.2
V
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
trr
reverse recovery time
Qr
recovered charge
IS = 25 A; dIS/dt = 100 A/µs;
VGS = 0 V; VDS = 20 V
300
ID
VGS (V) = 20
(A)
250
003aad101
10
8
6
5.5
-
59
-
ns
-
130
-
nC
003aad103
8
RDSon
(mΩ)
VGS (V) = 5
5.5
7
200
6
150
5
6
5
100
8
10
20
4
50
4.5
0
3
0
Fig 5.
0.75
1.5
2.25
VDS (V)
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aad102
250
ID
(A)
0
3
Fig 6.
75
150
225
ID (A)
300
Drain-source on-state resistance as a function
of drain current; typical values
003aad106
12000
Ciss
C
(pf)
200
8000
150
Crss
175 °C
100
4000
25 °C
50
0
0
Fig 7.
2
4
VGS (V)
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN4R4-80BS
Product data sheet
0
10-1
6
Fig 8.
1
10
VGS (V)
102
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
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PSMN4R4-80BS
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
003aad109
250
gfs
(S)
RDSon
(mΩ)
200
20
150
15
100
10
50
5
0
0
0
Fig 9.
003aad110
25
50
100
150
ID (A)
200
Forward transconductance as a function of
drain current; typical values
003aad280
5
4
15
VGS (V)
20
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
03aa35
10−1
min
typ
max
10−3
typ
2
10−4
min
10−5
1
10−6
0
60
120
180
0
Tj (°C)
2
4
6
VGS (V)
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Product data sheet
10
10−2
max
3
PSMN4R4-80BS
5
ID
(A)
VGS(th)
(V)
0
−60
0
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
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PSMN4R4-80BS
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
003aad327
2.5
VDS
a
ID
2
VGS(pl)
1.5
VGS(th)
VGS
1
QGS1
QGS2
QGS
0.5
QGD
QG(tot)
003aaa508
0
-60
0
60
120
Tj (°C)
180
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad105
10
VGS
(V)
Fig 14. Gate charge waveform definitions
003aad104
10000
C
(pF)
Ciss
VDS = 20 V
7.5
7500
VDS = 40 V
5
5000
2.5
2500
0
0
35
70
105
QG (nC)
140
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN4R4-80BS
Product data sheet
0
10-1
Coss
Crss
1
10
VDS (V)
102
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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PSMN4R4-80BS
NXP Semiconductors
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
003aad107
100
IS
(A)
75
50
175 °C
25
Tj = 25 °C
0
0
0.25
0.5
0.75
VSD (V)
1
Fig 17. Source current as a function of source-drain voltage; typical values
PSMN4R4-80BS
Product data sheet
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Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
8. Package outline
SOT404
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-02-11
06-03-16
SOT404
Fig 18. Package outline SOT404 (D2PAK)
PSMN4R4-80BS
Product data sheet
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN4R4-80BS v.1
20120322
Product data sheet
-
-
PSMN4R4-80BS
Product data sheet
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Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
10. Legal information
10.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
10.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
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the accuracy or completeness of information included herein and shall have
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
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Limited warranty and liability — Information in this document is believed to
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PSMN4R4-80BS
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PSMN4R4-80BS
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N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
11. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
PSMN4R4-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
14 of 15
PSMN4R4-80BS
NXP Semiconductors
N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 March 2012
Document identifier: PSMN4R4-80BS