VISHAY SI6473DQ

Si6473DQ
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
VDS (V)
rDS(on) ()
ID (A)
0.0125 @ VGS = –4.5 V
–9.5
0.016 @ VGS = –2.5 V
–8.5
0.0215 @ VGS = –1.8 V
–7.3
–20
20
S*
TSSOP-8
8
D
7
S
3
6
S
4
5
D
D
1
S
2
S
G
Si6473DQ
G
* Source Pins 2, 3, 6 and 7
must be tied common.
Top View
D
P-Channel MOSFET
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150C)a
TA = 25C
TA = 70C
Pulsed Drain Current (10 s Pulse Width)
IS
TA = 25C
TA = 70C
Operating Junction and Storage Temperature Range
PD
V
–9.5
–6.2
–5.9
–4.9
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
Unit
A
–30
–1.5
–0.95
1.75
1.08
1.14
0.69
TJ, Tstg
W
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 10 sec
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
55
70
95
115
35
45
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71164
S-01042—Rev. B, 15-May-00
www.vishay.com FaxBack 408-970-5600
2-1
Si6473DQ
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 A
–0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Forward
VDS = 0 V, VGS = "8 V
ID(on)
a
D i S
Drain-Source
On-State
O S
Resistance
R i
Diode Forward Voltagea
"100
VDS = –16 V, VGS = 0 V
–1
VDS = –16 V, VGS = 0 V, TJ = 70C
–10
VDS = –5 V, VGS = –4.5 V
rDS(on)
Transconductancea
V
20
nA
A
A
VGS = –4.5 V, ID = –9.5 A
0.010
0.0125
VGS = –2.5 V, ID = –8.5 A
0.013
0.016
VGS = –1.8 V, ID = –7.5 A
0.0175
0.0215
gfs
VDS = –15 V, ID = –9.5 A
45
VSD
IS = –1.5 A, VGS = 0 V
–0.64
–1.1
47.5
70
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = –10
10 V
V, VGS = –5
5V
V, ID = –9.5
95A
nC
C
7.6
Gate-Drain Charge
Qgd
7.6
Turn-On Delay Time
td(on)
42
60
tr
33
50
220
330
95
140
50
80
Rise Time
Turn-Off Delay Time
VDD = –10
10 V
V,, RL = 15 ID ^ –1
1 A,
A VGEN = –4.5
45V
V, RG = 6 td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = –1.5 A, di/dt = 100 A/s
ns
Notes
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Output Characteristics
Transfer Characteristics
30
30
VGS = 5 thru 2 V
24
1.5 V
I D – Drain Current (A)
I D – Drain Current (A)
24
18
12
6
18
12
TC = 125C
6
25C
1V
0
0
3
6
9
VDS – Drain-to-Source Voltage (V)
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2-2
–55C
0
12
0
0.5
1.0
1.5
2.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71164
S-01042—Rev. B, 15-May-00
Si6473DQ
New Product
Vishay Siliconix
On-Resistance vs. Drain Current
Capacitance
10000
0.025
0.020
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
0.030
VGS = 1.8 V
VGS = 2.5 V
0.015
VGS = 4.5 V
0.010
8000
Ciss
6000
4000
Coss
2000
0.005
0
Crss
0
0
6
12
18
24
0
30
3
ID – Drain Current (A)
Gate Charge
12
15
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 9.5 A
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
9
VDS – Drain-to-Source Voltage (V)
5
4
3
2
1
VGS = 4.5 V
ID = 9.5 A
1.4
1.2
1.0
0.8
0
0
10
20
30
40
0.6
–50
50
Qg – Total Gate Charge (nC)
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.04
r DS(on) – On-Resistance ( )
30
I S – Source Current (A)
6
TJ = 150C
10
TJ = 25C
0.03
ID = 9.5 A
0.02
0.01
0
1
0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71164
S-01042—Rev. B, 15-May-00
1.2
0
2
4
6
8
VGS – Gate-to-Source Voltage (V)
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2-3
Si6473DQ
New Product
Vishay Siliconix
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
60
0.4
50
40
ID = 250 A
Power (W)
V GS(th) Variance (V)
0.2
0.0
30
20
–0.2
10
–0.4
–50
–25
0
25
50
75
100
125
150
0
10–2
10–1
TJ – Temperature (C)
1
10
100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 95C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
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2-4
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71164
S-01042—Rev. B, 15-May-00