Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗ ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 14.5 + − 0.5 1.0 + − 0.2 (1) 4.4 + − 0.2 0.9 0.5 + − 0.1 2.5 + − 0.2 6.8 + − 0.2 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0 + − 0.3 Structure Epitaxial planar type NPN silicon transistor 2SD1858 4.5+0.2 −0.1 1.6 + − 0.1 1.0 Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237 1.05 ROHM : ATV 0.45 + − 0.1 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Parameter Collector current 1 IC A (DC) A (Pulse) ∗1 2 0.5 Collector power dissipation 2SD1664 2SD1858 ∗2 ∗3 W 2 PC 1 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + + ∗1 Pw=20ms, duty=1/2 ∗2 When mounted on a 40 40 0.7 mm ceramic board. ∗3 When it is mounted on the copper clad PCB (1.7mm thick) with land size for collector 1 square CM or larger. Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 40 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Emitter-base breakdown voltage Parameter Unit Conditions BVEBO 5 − − V IE=50μA Collector cutoff current ICBO − − 0.5 μA VCB=20V Emitter cutoff current IEBO − − 0.5 μA VEB=4V DC current transfer ratio hFE 120 − 390 − VCE=3V, IC=100mA IC/IB=500mA / 50mA VCE(sat) − 0.15 0.4 V Transition frequency fT − 150 − MHz Output capacitance Cob − 15 − pF Collector-emitter saturation voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 VCE=5V, IE= −50mA, f=100MHz VCB=10V, IE=0A, f=1MHz 2009.12 - Rev.A 2SD1664 / 2SD1858 Data Sheet Packaging specifications and hFE Taping Package Type hFE 2SD1664 QR 2SD1858 QR Code T100 TV2 Basic ordering unit (pieces) 1000 2500 − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristics curves Ta=100°C 100 50 25°C −55°C 20 10 5 400 4.5mA 2000 1.5mA 300 1.0mA 200 0.5mA 100 Ta=25°C 1000 500 200 VCE=3V 1V 100 0 1000 500 200 Ta=100°C 25°C −55°C 100 50 1 2 5 10 20 50 100 200 500 1000 0.5 0.2 0.1 IC/IB =50 0.05 20 10 0.02 0.01 1 2 5001000 lC/lB = 10 0.5 0.2 0.1 0.05 Ta =100°C 25°C −40°C 0.02 0.01 1 2 EMITTER CURRENT : IE(mA) Fig.7 Gain bandwidth product vs. emitter current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -100 Ta = 25°C f = 1MHz IE = 0A 50 20 10 5 0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.8 Collector output capacitance vs. collector-base voltage 2/3 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) 5 IC Max. (Pulse)∗ 2 DC 1 10 0m s∗ 0.5 ∗ s -50 500 1000 0m 50 100 50 100 200 =1 100 -20 50 100 200 10 20 PW 200 -10 10 20 Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=25°C VCE=5V -5 5 5 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (ΙΙ) -2 2 Fig.3 DC current gain vs. collector current ( Ι ) Ta=25°C COLLECTOR CURRENT : IC (mA) 20 -1 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=3V 1.2 Fig.2 Grounded emitter output characteristics Grounded emitter propagation characteristics 2000 0.8 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 0.4 50 IB=0A 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE(V) DC CURRENT GAIN : hFE 3.0mA 3.5mA 4.0mA 2.0mA 2 1 0 TRANSITION FREQUENCY : fT (MHz) Ta=25°C DC CURRENT GAIN : hFE 200 2.5mA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) VCE=6V COLLECTOR CURRENT : IC (mA) 500 500 0.2 0.1 0.05 Ta = 25°C Single nonrepetitive 0.02 pulse 0.01 0.1 0.2 0.5 1 ∗ 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD1664) 2009.12 - Rev.A 2 100 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 TIME : t (s) Fig.10 Transient thermal resistance (2SD1664) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 IC Max. (Pulse)∗ Pw=100ms∗ 10ms∗ 0.5 0.2 DC 0.1 0.05 When mounted on a 1.7mm thick PCB 0.02 having collector foil dementions 1cm2 0.01 0.5 1 2 5 10 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Safe operating area (2SD1858) 3/3 TRANSIENT THERMAL RESISTANCE : Rth (°C/W) Data Sheet COLLECTOR CURRENT : IC (A) TRANSIENT THERMAL RESISTANCE : Rth (°C/W) 2SD1664 / 2SD1858 200 Ta=25°C 100 50 20 10 5 2 0.001 0.01 0.1 1 10 100 1000 TIME : t (s) Fig.12 Transient thermal resistance (2SD1858) 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 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