Si9928DY Vishay Siliconix Complimentary 20-V (D-S) MOSFET VDS (V) N Ch N-Channel l rDS(on) () ID (A) 0.05 @ VGS = 4.5 V 5.0 0.06 @ VGS = 3.0 V 4.2 0.08 @ VGS = 2.7 V 3.6 0.11 @ VGS = –4.5 V 3.4 0.15 @ VGS = –3.0 V 2.9 0.19 @ VGS = –2.7 V 2.6 20 P-Channel P Ch l –20 20 D1 D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View S1 D2 N-Channel MOSFET D2 P-Channel MOSFET Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 –20 Gate-Source Voltage VGS 12 12 5.0 3.4 4.0 2.8 IDM 10 10 IS 2.0 –2.0 2.0 2.0 1.3 1.3 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range ID PD Unit V A W TJ, Tstg –55 to 150 C Symbol N- or P-Channel Unit RthJA 62.5 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70143 S-00652—Rev. G, 27-Mar-00 www.vishay.com FaxBack 408-970-5600 1 Si9928DY Vishay Siliconix Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage Z G V l D i Current C Zero Gate Voltage Drain On-State Drain Currentb b D i S Drain-Source On-State O S Resistance R i Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 0.8 1.2 VDS = VGS, ID = –250 mA P-Ch –0.8 –1.1 VDS = 0 V, VGS = "12 V V N-Ch "100 P-Ch "100 VDS = 16 V, VGS = 0 V N-Ch 1 VDS = – 16 V, VGS = 0 V P-Ch –1 VDS = 10 V, VGS = 0 V, TJ = 70C N-Ch 5 VDS = –10 V, VGS = 0 V, TJ = 70C P-Ch VDS w 5 V, VGS = 4.5 V N-Ch 10 VDS v –5 V, VGS = –4.5 V P-Ch –10 nA A mA –5 A VGS = 4.5 V, ID = 5.0 A N-Ch 0.041 0.05 VGS = –4.5 V, ID = –3.2 A P-Ch 0.087 0.11 VGS = 3.0 V, ID = 3.9 A N-Ch 0.052 0.06 VGS = –3.0 V, ID = –2.0 A P-Ch 0.120 0.15 VGS = 2.7 V, ID = 1.0 A N-Ch 0.060 0.08 VGS = –2.7 V, ID = –1.0 A P-Ch 0.135 0.19 VDS = 10 V, ID = 5.0 A N-Ch 13 VDS = –9 V, ID = –3.2 A P-Ch 8 IS = 5.0 A, VGS = 0 V N-Ch 0.9 1.2 IS = –2.0 A, VGS = 0 V P-Ch –0.9 –1.2 N-Ch 10 20 20 W S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg N Ch N-Channel l VDS = 6 V, V VGS = 4.5 4 5 V, V ID = 5.0 50A P-Ch 8 N-Ch 2.6 P-Ch 1.6 N-Ch 3.7 P-Ch 3.5 N-Ch 13 30 22 40 N-Ch 9 40 tr N Ch N-Channel l VDD = 6 V, RL = 6 W ID ^ 1 A, A VGEN = 4.5 4 5 V, V RG = 6 W P-Ch P-Ch 43 80 N-Ch 30 60 td(off) P-Channel VDD = –6 V, RL = 6 W 5 V, V RG = 6 W ID ^ –1 A A, VGEN = –4 –4.5 P-Ch 35 70 N-Ch 9 30 P-Ch 20 40 IF = 5.0 A, di/dt = 100 A/ms N-Ch 100 150 IF = –2.0 A, di/dt = 100 A/ms P-Ch 75 100 Qgs P-Channel VDS = –6 V, VGS = –4.5 V, ID = –3.2 A Qgd td(on) tf trr nC C ns Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2 Document Number: 70143 S-00652—Rev. G, 27-Mar-00 Si9928DY Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 VGS = 5.5, 5, 4.5, 4, 3.5 V 16 3V I D – Drain Current (A) I D – Drain Current (A) 16 12 8 2.5 V 4 12 8 TC = 125C 25C 4 2V –55C 1.5 V 0 0 0 1 2 3 4 5 0 0.5 1.0 VDS – Drain-to-Source Voltage (V) 1.5 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.10 2000 0.08 VGS = 2.7 V 1600 VGS = 3 V C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 2.0 0.06 VGS = 4.5 V 0.04 1200 800 Ciss 0.02 400 0 0 Coss Crss 0 4 8 12 16 20 0 4 6 8 10 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 7 2.0 6 VDS = 6 V ID = 5 A r DS(on) – On-Resistance ( Ω ) (Normalized) V GS – Gate-to-Source Voltage (V) 2 5 4 3 2 1.6 VGS = 4.5 V ID = 5 A 1.2 0.8 0.4 1 0 0 3 6 9 Qg – Total Gate Charge (nC) Document Number: 70143 S-00652—Rev. G, 27-Mar-00 12 15 0 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 3 Si9928DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.250 20 ID = 1 A r DS(on) – On-Resistance ( Ω ) I S – Source Current (A) TJ = 150C 10 TJ = 25C 0.200 ID = 5 A 0.150 0.100 0.050 0 1 0 0.8 0.4 1.2 1.6 0 2.0 VSD – Source-to-Drain Voltage (V) 1 2 4 5 6 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 1.0 25 20 ID = 250 µA Power (W) 0.5 V GS(th) Variance (V) 3 0.0 15 10 –0.5 5 –1 –50 0 0 50 100 150 0.01 0.1 1 TJ – Temperature (C) 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 4 Document Number: 70143 S-00652—Rev. G, 27-Mar-00 Si9928DY Vishay Siliconix Output Characteristics Transfer Characteristics 10 10 VGS = 5, 4 V 3V 8 I D – Drain Current (A) I D – Drain Current (A) 8 6 4 2 6 4 TC = 125C 2 25C 2, 1 V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 0.5 1.0 On-Resistance vs. Drain Current 2.5 3.0 3.5 Capacitance 2000 0.20 1500 VGS = 2.7 V C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 2.0 VGS – Gate-to-Source Voltage (V) 0.25 VGS = 3 V 0.15 VGS = 4.5 V 0.10 1000 Ciss 500 Coss Crss 0.05 0 0 1 2 3 4 5 6 0 Gate Charge 5 1.6 r DS(on) – On-Resistance ( Ω ) (Normalized) VDS = 6 V ID = 3.2 A 4 3 2 1 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70143 S-00652—Rev. G, 27-Mar-00 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) V GS – Gate-to-Source Voltage (V) 1.5 8 10 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.2 A 1.2 1.0 0.8 0.6 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 5 Si9928DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.20 r DS(on) – On-Resistance ( Ω ) I S – Source Current (A) TJ = 150C TJ = 25C 0.17 ID = 3.2 A 0.14 0.11 0.08 0.05 1 0 0.4 0.8 1.2 1.6 0 2.0 VSD – Source-to-Drain Voltage (V) Threshold Voltage 6 8 Single Pulse Power 25 20 ID = 250 µA Power (W) V GS(th) Variance (V) 4 VGS – Gate-to-Source Voltage (V) 1.0 0.5 2 0.0 15 10 –0.5 5 –1 –50 0 0 50 100 150 10–2 10–1 TJ – Temperature (C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 6 Document Number: 70143 S-00652—Rev. G, 27-Mar-00