VISHAY SI4890DY

Si4890DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
VDS (V)
30
rDS(on) ()
ID (A)
0.012 @ VGS = 10 V
11
0.020 @ VGS = 4.5 V
9
D D
D D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
N-Channel MOSFET
Top View
S
S
S
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
25
Continuous Drain Current (TJ = 150C)a, b
TA = 70C
Continuous Source Current (Diode Conduction)a, b
TA = 25C
Maximum Power Dissipationa, b
TA = 70C
Operating Junction and Storage Temperature Range
V
11
TA = 25C
Pulsed Drain Current (10 s Pulse Width)
Unit
ID
9
IDM
50
IS
2.3
A
2.5
PD
W
1.6
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Symbol
t 10 sec
Steady State
Typical
Maximum
50
RthJA
70
Unit
C/W
Notes
a. Surface Mounted on FR4 Board.
b. t 10 sec.
Document Number: 70855
S-56948—Rev. A, 01-Feb-99
www.vishay.com FaxBack 408-970-5600
2-1
Si4890DY
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 A
0.8
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
IDSS
VDS = 24 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V, TJ = 55C
5
Unit
Static
Gate Threshold Voltage
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
VDS w 5 V, VGS = 10 V
V
40
nA
A
A
VGS = 10 V, ID = 11 A
0.0098
0.012
VGS = 4.5 V, ID = 9 A
0.0164
0.020
Forward Transconductancea
gfs
VDS = 15 V, ID = 11 A
21
Diode Forward Voltagea
VSD
IS = 2.3 A, VGS = 0 V
0.71
1.1
14.2
20
S
V
Dynamicb
Total Gate Charge
Qg
VDS = 15 V,
V VGS = 5
5.0
0V
V, ID = 11 A
nC
C
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
6.6
Turn-On Delay Time
td(on)
13
20
8.5
15
35
53
17
26
35
70
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = 15 V
V,, RL = 15 ID ^ 1 A,
A VGEN = 10 V
V, RG = 6 IF = 2.3 A, di/dt = 100 A/s
3.3
ns
Notes
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70855
S-56948—Rev. A, 01-Feb-99
Si4890DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
50
50
VGS = 10 thru 4 V
40
I D – Drain Current (A)
I D – Drain Current (A)
40
30
20
3V
10
30
20
TC = 125C
10
25C
0
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.05
4.0
4.5
1800
1500
0.04
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
–55C
0.03
VGS = 4.5 V
0.02
Ciss
1200
900
600
Coss
VGS = 10 V
0.01
300
Crss
0
0
0
10
20
30
40
50
0
6
ID – Drain Current (A)
18
24
30
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
1.8
10
VDS = 15 V
ID = 11 A
r DS(on) – On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
12
8
6
4
1.6
VGS = 10 V
ID = 11 A
1.4
1.2
1.0
0.8
2
0.6
0
0
5
10
15
Qg – Total Gate Charge (nC)
Document Number: 70855
S-56948—Rev. A, 01-Feb-99
20
25
0.4
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
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Si4890DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
r DS(on) – On-Resistance ( )
I S – Source Current (A)
50
TJ = 150C
10
TJ = 25C
0.08
ID = 11 A
0.06
0.04
0.02
0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
50
0.6
0.4
40
ID = 250 A
0.2
Power (W)
V GS(th) Variance (V)
2
–0.0
–0.2
30
20
–0.4
–0.6
10
–0.8
–1
–50
0
–25
0
25
50
75
100
TJ – Temperature (C)
125
150
0.01
0.1
1
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
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2-4
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 70855
S-56948—Rev. A, 01-Feb-99