Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET VDS (V) 30 rDS(on) () ID (A) 0.012 @ VGS = 10 V 11 0.020 @ VGS = 4.5 V 9 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 25 Continuous Drain Current (TJ = 150C)a, b TA = 70C Continuous Source Current (Diode Conduction)a, b TA = 25C Maximum Power Dissipationa, b TA = 70C Operating Junction and Storage Temperature Range V 11 TA = 25C Pulsed Drain Current (10 s Pulse Width) Unit ID 9 IDM 50 IS 2.3 A 2.5 PD W 1.6 TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambient (MOSFET)a Symbol t 10 sec Steady State Typical Maximum 50 RthJA 70 Unit C/W Notes a. Surface Mounted on FR4 Board. b. t 10 sec. Document Number: 70855 S-56948—Rev. A, 01-Feb-99 www.vishay.com FaxBack 408-970-5600 2-1 Si4890DY Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 A 0.8 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 IDSS VDS = 24 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V, TJ = 55C 5 Unit Static Gate Threshold Voltage On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) VDS w 5 V, VGS = 10 V V 40 nA A A VGS = 10 V, ID = 11 A 0.0098 0.012 VGS = 4.5 V, ID = 9 A 0.0164 0.020 Forward Transconductancea gfs VDS = 15 V, ID = 11 A 21 Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.71 1.1 14.2 20 S V Dynamicb Total Gate Charge Qg VDS = 15 V, V VGS = 5 5.0 0V V, ID = 11 A nC C Gate-Source Charge Qgs Gate-Drain Charge Qgd 6.6 Turn-On Delay Time td(on) 13 20 8.5 15 35 53 17 26 35 70 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 15 V V,, RL = 15 ID ^ 1 A, A VGEN = 10 V V, RG = 6 IF = 2.3 A, di/dt = 100 A/s 3.3 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70855 S-56948—Rev. A, 01-Feb-99 Si4890DY Vishay Siliconix Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 30 20 3V 10 30 20 TC = 125C 10 25C 0 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.05 4.0 4.5 1800 1500 0.04 C – Capacitance (pF) r DS(on) – On-Resistance ( ) –55C 0.03 VGS = 4.5 V 0.02 Ciss 1200 900 600 Coss VGS = 10 V 0.01 300 Crss 0 0 0 10 20 30 40 50 0 6 ID – Drain Current (A) 18 24 30 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 15 V ID = 11 A r DS(on) – On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 12 8 6 4 1.6 VGS = 10 V ID = 11 A 1.4 1.2 1.0 0.8 2 0.6 0 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 70855 S-56948—Rev. A, 01-Feb-99 20 25 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4890DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) – On-Resistance ( ) I S – Source Current (A) 50 TJ = 150C 10 TJ = 25C 0.08 ID = 11 A 0.06 0.04 0.02 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 50 0.6 0.4 40 ID = 250 A 0.2 Power (W) V GS(th) Variance (V) 2 –0.0 –0.2 30 20 –0.4 –0.6 10 –0.8 –1 –50 0 –25 0 25 50 75 100 TJ – Temperature (C) 125 150 0.01 0.1 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 www.vishay.com FaxBack 408-970-5600 2-4 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 70855 S-56948—Rev. A, 01-Feb-99