VISHAY SI9939DY

Si9939DY
Vishay Siliconix
Complimentary 30-V (D-S) MOSFET
VDS (V)
N Ch
N-Channel
l
rDS(on) ()
ID (A)
0.05 @ VGS = 10 V
3.5
0.07 @ VGS = 6 V
3
0.08 @ VGS = 4.5 V
2.5
0.10 @ VGS = –10 V
3.5
30
P-Channel
P Ch
l
–30
30
0.12 @ VGS = –6V
3
0.16 @ VGS = –4.5 V
2.5
D1
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
S1
Top View
D2
N-Channel MOSFET
D2
P-Channel MOSFET
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Parameter
VDS
30
–30
Gate-Source Voltage
VGS
20
20
3.5
3.5
2.8
2.8
IDM
20
20
IS
1.7
Continuous Drain Current (TJ = 150C)a
TA = 25C
TA = 70C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25C
Maximum Power Dissipationa
TA = 70C
Operating Junction and Storage Temperature Range
ID
PD
Unit
V
A
–1.7
2.0
1.3
W
–55 to 150
C
Symbol
N- or P- Channel
Unit
RthJA
62.5
C/W
TJ, Tstg
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
www.vishay.com FaxBack 408-970-5600
1
Si9939DY
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero
Gate
G
Voltage
V l
Drain
D i Current
C
b
O S
On-State
Drain
D i Current
C
b
D i S
Drain-Source
On-State
O S
Resistance
R i
Forward Transconductanceb
Diode Forward Voltageb
VGS(th)
IGSS
VDS = VGS, ID = 250 mA
N-Ch
1.0
VDS = VGS, ID = –250 mA
P-Ch
–1.0
V
VDS = 0 V, VGS = "20 V
"100
VDS = 24 V, VGS = 0 V
N-Ch
1
VDS = –24 V, VGS = 0 V
P-Ch
–1
VDS = 15 V, VGS = 0 V, TJ = 70C
N-Ch
5
VDS = –15 V, VGS = 0 V, TJ = 70C
P-Ch
VDS w 5 V, VGS = 10 V
N-Ch
20
VDS v –5 V, VGS = –10 V
P-Ch
–20
VDS w 5 V, VGS = 4.5 V
N-Ch
3.5
VDS v –5 V, VGS = –4.5 V
P-Ch
–3.5
VGS = 10 V, ID = 3.5 A
N-Ch
0.04
0.05
VGS = –10 V, ID = 3.5 A
P-Ch
0.074
0.10
VGS = 6 V, ID = 3 A
N-Ch
0.045
0.07
VGS = – 6 V, ID = 3 A
P-Ch
0.090
0.12
VGS = 4.5 V, ID = 2.5 A
N-Ch
0.054
0.08
VGS = –4.5 V, ID = 2 A
P-Ch
0.115
0.16
VDS = 15 V, ID = 3.5 A
N-Ch
9
VDS = –15 V, ID = –3.5 A
P-Ch
6
IS = 1.7 A, VGS = 0 V
N-Ch
0.75
1.2
IS = –1.7 A, VGS = 0 V
P-Ch
–0.75
–1.2
N-Ch
14
35
P-Ch
14.5
35
N-Ch
1.9
P-Ch
2.7
N-Ch
2.8
P-Ch
3.5
N-Ch
10
30
P-Ch
11
30
tr
N-Channel
N
Ch
l
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
N-Ch
10
40
P-Ch
11
40
td(off)
P-Channel
15 V
VDD = –15
V, RL = 15 W
ID ^ –1
1 A, VGEN = –10
10 V, RG = 6 W
N-Ch
26
50
P-Ch
30
50
N-Ch
10
50
P-Ch
12
50
N-Ch
60
120
P-Ch
40
100
IDSS
ID(on)
rDS(on)
gfs
VSD
nA
mA
A
–5
A
W
S
V
Dynamica
Total Gate Charge
Qg
N Ch
N-Channel
l
VDS = 10 V
V, VGS = 10 V
V, ID = 3.5
35A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qgs
Qgd
P-Channel
VDS = –10 V, VGS = –10 V
ID = –3.5 A
td(on)
tf
trr
IF = 3.5 A, di/dt = 100 A/ms
nC
C
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
Si9939DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
20
20
VGS = 10 thru 5 V
4V
16
I D – Drain Current (A)
I D – Drain Current (A)
16
12
8
3V
4
12
8
TC = 125C
25C
4
2, 1 V
–55C
0
0
0
2
4
6
8
10
0
1
VDS – Drain-to-Source Voltage (V)
2
3
4
5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1400
0.20
C – Capacitance (pF)
r DS(on) – On-Resistance ( Ω )
1200
0.16
0.12
VGS = 4.5 V
0.08
6V
1000
Coss
800
600
Ciss
400
0.04
10 V
Crss
200
0
0
0
6
12
18
24
0
30
6
18
24
30
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
Gate Charge
10
12
2.0
On-Resistance vs. Junction Temperature
8
r DS(on) – On-Resistance ( Ω )
(Normalized)
V GS – Gate-to-Source Voltage (V)
VGS = 10 V
ID = 3.5 A
VGS = 10 V
ID = 3.5 A
6
4
2
0
0
3
6
9
Qg – Total Gate Charge (nC)
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
12
15
1.6
1.2
0.8
0.4
0
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
www.vishay.com FaxBack 408-970-5600
3
Si9939DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
20
r DS(on) – On-Resistance ( Ω )
TJ = 150C
I S – Source Current (A)
10
TJ = 25C
0.3
0.2
ID = 3.5 A
0.1
0
1
0
0.8
0.4
1.2
0
1.6
VSD – Source-to-Drain Voltage (V)
2
4
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
40
0.4
0.2
32
ID = 250 mA
–0.0
Power (W)
V GS(th) – Variance (V)
6
–0.2
24
16
–0.4
8
–0.6
–0.8
–50
0
–25
0
25
50
75
100
125
150
0.01
1
0.1
TJ – Temperature (C)
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
4. Surface Mounted
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com FaxBack 408-970-5600
4
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
Si9939DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
20
20
VGS = 10 thru 6V
16
16
I D – Drain Current (A)
I D – Drain Current (A)
5V
12
8
4V
4
12
8
TC = 125C
4
25C
2, 1 V
–55C
3V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
4
5
6
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1500
0.6
0.5
1200
C – Capacitance (pF)
r DS(on) – On-Resistance ( Ω )
3
0.4
0.3
VGS = 4.5 V
0.2
6V
900
Coss
600
Ciss
300
0.1
Crss
10 V
0
0
0
4
8
12
16
0
20
Gate Charge
2.0
8
6
4
2
0
3
6
9
Qg – Total Gate Charge (nC)
Document Number: 70146
S-00652—Rev. G, 27-Mar-00
18
24
30
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 3.5 A
r DS(on) – On-Resistance ( Ω )
(Normalized)
V GS – Gate-to-Source Voltage (V)
VGS = 10 V
ID = 3.5 A
0
12
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
10
6
12
15
1.6
1.2
0.8
0.4
0
–50
0
50
100
150
TJ – Junction Temperature (C)
www.vishay.com FaxBack 408-970-5600
5
Si9939DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
r DS(on) – On-Resistance ( Ω )
20
I S – Source Current (A)
10
TJ = 150C
TJ = 25C
0.4
0.3
ID = 3.5 A
0.2
0.1
0
1
0.2
0.6
0.4
0.8
1.0
1.2
0
1.4
VSD – Source-to-Drain Voltage (V)
2
4
8
10
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
40
0.8
0.6
32
0.4
Power (W)
V GS(th) Variance (V)
6
ID = 250 µA
0.2
24
16
0.0
8
–0.2
0
–0.4
–50
0
50
100
150
0.01
1
0.1
10
30
Time (sec)
TJ – Temperature (C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
4. Surface Mounted
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com FaxBack 408-970-5600
6
Document Number: 70146
S-00652—Rev. G, 27-Mar-00