Si4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET VDS (V) N-Channel P-Channel 30 –30 rDS(on) () ID (A) 0.040 @ VGS = 10 V 6 0.060 @ VGS = 4.5 V 4.8 0.040 @ VGS = –10 V 6 0.070 @ VGS = –4.5 V 4.4 S2 SO-8 G2 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D D G1 Top View S1 Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 –30 Gate-Source Voltage VGS 20 20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range 6 6 4.7 4.7 IDM 30 30 IS 2 –2 ID Unit V A 2.4 PD W 1.5 TJ, Tstg –55 to 150 C Symbol N- or P- Channel Unit RthJA 52 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70633 S-56944—Rev. E, 23-Nov-98 www.vishay.com FaxBack 408-970-5600 2-1 Si4558DY Vishay Siliconix Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate-Body Leakage Z Zero Gate G Voltage V l Drain D i Current C b O S On-State Drain D i Current C b D i S Drain-Source On-State O S Resistance R i Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA N-Ch 1.0 VDS = VGS, ID = –250 mA P-Ch –1.0 V VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = –30 V, VGS = 0 V P-Ch –1 VDS = 24 V, VGS = 0 V, TJ = 70C N-Ch 5 VDS = –24 V, VGS = 0 V, TJ = 70C P-Ch –5 VDS = 5 V, VGS = 10 V N-Ch 30 VDS = –5 V, VGS = –10 V P-Ch –30 VDS = 5 V, VGS = 4.5 V N-Ch 8.0 VDS = –5 V, VGS = –4.5 V P-Ch –8.0 VGS = 10 V, ID = 6 A N-Ch 0.032 0.040 VGS = –10 V, ID = –6 A P-Ch 0.032 0.040 VGS = 4.5 V, ID = 4.8 A N-Ch 0.045 0.060 VGS = –4.5 V, ID = –4.4 A P-Ch 0.056 0.070 VDS = 15 V, ID = 6 A N-Ch 13 VDS = –15 V, ID = –6 A P-Ch 10.6 VSD IS = 2 A, VGS = 0 V N-Ch 0.77 1.2 IS = –2 A, VGS = 0 V P-Ch 0.77 –1.2 N-Ch 16 30 P-Ch 22 35 N-Ch 3.4 P-Ch 5.4 N-Ch 2.3 mA A A rDS(on) gfs nA W S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd N Ch N-Channel l VDS = 15 V V, VGS = 10 V V, ID = 6 A P-Channel P Ch l VDS = –15 V, VGS = –10 V ID = –6 A td(on) tr N-Channel N Ch l VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) P-Channel VDD = –15 15 V V, RL = 15 W ID ^ –1 1 A, VGEN = –10 10 V, RG = 6 W tf trr nC C P-Ch 3.6 N-Ch 12 25 P-Ch 12 25 N-Ch 12 25 P-Ch 12 25 N-Ch 27 55 P-Ch 38 55 N-Ch 24 50 P-Ch 25 50 IF = 2 A, di/dt = 100 A/ms N-Ch 45 80 IF = –2 A, di/dt = 100 A/ms P-Ch 50 80 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70633 S-56944—Rev. E, 23-Nov-98 Si4558DY Vishay Siliconix Output Characteristics Transfer Characteristics 30 30 VGS = 10, 9, 8, 7, 6, 5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 4V 12 6 3V 18 12 TC = 125C 6 25C –55C 0 0 0 1 2 3 4 5 0 VDS – Drain-to-Source Voltage (V) 1 2 On-Resistance vs. Drain Current 5 6 Capacitance 1500 0.125 1200 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 4 VGS – Gate-to-Source Voltage (V) 0.150 0.100 0.075 VGS = 4.5 V 0.050 VGS = 10 V Ciss 900 600 Coss 300 0.025 0 Crss 0 0 6 12 18 24 0 30 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 10 2.0 VDS = 15 V ID = 6 A 8 r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 3 6 4 2 0 0 4 8 12 Qg – Total Gate Charge (nC) Document Number: 70633 S-56944—Rev. E, 23-Nov-98 16 1.6 VGS = 10 V ID = 6 A 1.2 0.8 0.4 0 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4558DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 30 r DS(on)– On-Resistance ( W ) I S – Source Current (A) TJ = 150C 10 0.08 0.06 0.04 ID = 6 A 0.02 TJ = 25C 0 1 0 0.4 0.2 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 2 4 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 40 ID = 250 mA 0.2 32 –0.0 Power (W) V GS(th) Variance (V) 6 –0.2 24 16 –0.4 8 –0.6 –0.8 –50 0 0 50 100 150 0.01 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 52C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 t1 t2 10–3 4. Surface Mounted 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70633 S-56944—Rev. E, 23-Nov-98 Si4558DY Vishay Siliconix Output Characteristics Transfer Characteristics 30 30 TC = –55C VGS = 10, 9, 8, 7, 6, 5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 4V 12 6 25C 18 125C 12 6 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 5 6 Capacitance 2000 0.15 1500 C – Capacitance (pF) r DS(on)– On-Resistance ( ) On-Resistance vs. Drain Current 0.10 VGS = 4.5 V VGS = 10 V Ciss 1000 Coss 500 Crss 0 0 0 6 12 18 24 30 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 10 2.0 1.8 VDS = 15 V ID = 6 A 8 r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 4 VGS – Gate-to-Source Voltage (V) 0.20 0.05 3 6 4 2 1.6 VGS = 10 V ID = 6 A 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 Qg – Total Gate Charge (nC) Document Number: 70633 S-56944—Rev. E, 23-Nov-98 20 25 0.4 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-5 Si4558DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 30 TJ = 150C 10 TJ = 25C 0.08 0.06 0.04 ID = 6 A 0.02 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.8 40 32 ID = 250 mA 0.4 Power (W) V GS(th) Variance (V) 0.6 0.2 –0.0 24 16 –0.2 8 –0.4 –0.6 –50 0 0 50 100 150 0.01 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 52C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 t1 t2 4. Surface Mounted 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-6 Document Number: 70633 S-56944—Rev. E, 23-Nov-98