Freescale Semiconductor Technical Data Document Number: A2T26H165--24S Rev. 0, 12/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. 2600 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.7 Vdc, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) 2496 MHz 14.7 45.4 7.8 –30.1 2590 MHz 15.0 45.1 8.1 –35.6 2690 MHz 15.0 45.6 7.5 –37.3 A2T26H165--24SR3 2496–2690 MHz, 32 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR ACPR (dBc) Features NI--780S--4L2L Advanced High Performance In--Package Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with VDD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T26H165--24SR3 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C (1,2) TJ –40 to +225 C Characteristic Symbol Value (2,3) Unit RJC 0.45 C/W Operating Junction Temperature Range Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 73C, 32 W Avg., W--CDMA, 28 Vdc, IDQA = 400 mA, VGSB = 0.7 Vdc, 2590 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 70 Adc) VGS(th) 0.8 1.6 2.2 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 400 mAdc, Measured in Functional Test) VGSA(Q) 2.2 2.5 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 700 mAdc) VDS(on) 0.1 0.15 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 Adc) VGS(th) 0.8 1.6 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1200 mAdc) VDS(on) 0.1 0.15 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A, Carrier On Characteristics -- Side B, Peaking 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Each side of device measured separately. (continued) A2T26H165--24SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.7 Vdc, Pout = 32 W Avg., f = 2496 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 14.0 14.7 17.0 dB Drain Efficiency D 42.0 45.4 — % PAR 7.2 7.8 — dB ACPR — –30.1 –27.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 400 mA, VGSB = 0.7 Vdc, f = 2590 MHz, 10 sec(on), 10% Duty Cycle VSWR 10:1 at 32 Vdc, 209 W Pulsed CW Output Power (3 dB Input Overdrive from 155 W Pulsed CW Rated Power) No Device Degradation Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.7 Vdc, 2496–2690 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 141 — W (3) P3dB — 191 — W AM/PM (Maximum value measured at the P3dB compression point across the 2496–2690 MHz frequency range) — –28 — VBWres — 110 — MHz Gain Flatness in 194 MHz Bandwidth @ Pout = 32 W Avg. GF — 0.3 — dB Gain Variation over Temperature (–30C to +85C) G — 0.01 — dB/C P1dB — 0.007 — dB/C Pout @ 3 dB Compression Point VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) Table 5. Ordering Information Device A2T26H165--24SR3 Tape and Reel Information R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel Package NI--780S--4L2L 1. Part internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A2T26H165--24SR3 RF Device Data Freescale Semiconductor, Inc. 3 VDDA VGGA C22 C12 C2 C1 C13 C14 C3 C4 Z1 C9 C7 C8 C C15 C17 C16 P C18 R3 C19 C20 C10 C11 C21 VGGB A2T26H165--24S Rev. 3 D67245 C23 VDDB C6 CUT OUT AREA R2 C5 R1 Figure 2. A2T26H165--24SR3 Test Circuit Component Layout Table 6. A2T26H165--24SR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C10, C12, C14, C20, C21 10 F Chip Capacitors C5750X7S2A106M230KB TDK C2, C4, C9 7.5 pF Chip Capacitors ATC600F7R5BT250XT ATC C3, C5 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC C6 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC C7 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC C8 0.7 pF Chip Capacitor ATC600F0R7BT250XT ATC C11, C13, C18, C19 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC C15 5.6 pF Chip Capacitor ATC600F5R6BT250XT ATC C16 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC C17 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC C22, C23 470 F, 63 V Electrolytic Capacitors MCGPR63V470M Multicomp R1 50 , 10 W Termination CW12010T0050GBK ATC R2, R3 6.2 , 1/4 W Chip Resistors CRCW12066R20FKEA Vishay Z1 2300–2700 MHz Band, 90, 2 dB Hybrid Coupler X3C25P1-02S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D67245 MTL A2T26H165--24SR3 4 RF Device Data Freescale Semiconductor, Inc. 15.4 46.5 46 45.5 D 15.2 45 Gps 15 14.8 PARC 14.6 14.4 14 2480 2510 2540 –1 –30 –1.5 –32 –34 ACPR 14.2 –28 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 32 W (Avg.), IDQA = 400 mA, VGSB = 0.7 Vdc 15.8 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 15.6 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF –36 2570 2600 2630 f, FREQUENCY (MHz) 2660 2690 –2 –2.5 –3 PARC (dB) 47 16 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS –3.5 –38 2720 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 32 Watts Avg. –10 VDD = 28 Vdc, Pout = 26 W (PEP), IDQA = 400 mA VGSB = 0.7 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2590 MHz –20 IM3--U –30 IM3--L –40 IM5--L IM5--U –50 IM7--L –60 IM7--U 1 10 300 100 TWO--TONE SPACING (MHz) 16 0 15.5 15 14.5 14 13.5 VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.7 Vdc f = 2590 MHz, Single--Carrier W--CDMA –1 dB = 24.07 W ACPR –1 –2 –2 dB = 33.58 W D –4 –5 10 –3 dB = 44.34 W 30 40 50 Pout, OUTPUT POWER (WATTS) 80 –30 70 50 PARC 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 20 –25 60 Gps –3 90 60 –35 –40 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 16.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing –45 40 –50 30 70 –55 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2T26H165--24SR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 18 16 2590 MHz Gps 14 2496 MHz 2690 MHz 2590 MHz 2690 MHz 12 ACPR 2496 MHz 2590 MHz 8 2690 MHz 50 –10 40 20 10 D 10 Pout, OUTPUT POWER (WATTS) AVG. 1 0 30 2496 MHz 10 60 0 100 200 –20 –30 –40 ACPR (dBc) VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.7 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 20 –50 –60 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 18 GAIN (dB) 16 Gain 14 VDD = 28 Vdc Pin = 0 dBm IDQA = 400 mA VGSB = 0.7 Vdc 12 10 8 2300 2400 2500 2600 2700 2800 2900 3000 3100 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response A2T26H165--24SR3 6 RF Device Data Freescale Semiconductor, Inc. Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQA = 441 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 2496 2.52 – j13.3 2.69 + j12.3 2590 3.83 – j13.4 3.80 + j12.5 2690 6.63 – j12.9 6.03 + j11.8 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 4.68 – j10.6 16.8 49.0 80 54.5 –12 4.42 – j11.0 17.3 49.0 79 54.0 –12 4.49 – j12.1 17.3 49.0 80 54.7 –13 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2496 2.52 – j13.3 2.62 + j12.6 4.48 – j11.2 14.6 49.7 94 55.5 –15 2590 3.83 – j13.4 3.91 + j12.9 4.33 – j11.7 15.0 49.7 94 55.0 –15 2690 6.63 – j12.9 6.61 + j12.3 4.49 – j12.4 15.1 49.7 94 56.0 –16 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 441 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2496 2.52 – j13.3 2.86 + j12.5 11.2 – j8.23 19.9 47.1 51 65.5 –20 2590 3.83 – j13.4 4.00 + j12.5 8.89 – j6.75 20.4 47.1 51 65.7 –21 2690 6.63 – j12.9 6.11 + j11.6 7.24 – j7.37 20.3 47.2 52 65.4 –21 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 10.5 – j8.22 17.7 47.9 62 66.7 –26 4.07 + j12.9 8.73 – j7.25 18.2 47.9 62 66.8 –26 6.61 + j11.9 7.11 – j7.64 18.2 48.0 62 66.4 –27 f (MHz) Zsource () Zin () 2496 2.52 – j13.3 2.75 + j12.7 2590 3.83 – j13.4 2690 6.63 – j12.9 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T26H165--24SR3 RF Device Data Freescale Semiconductor, Inc. 7 Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 2496 4.38 – j16.1 4.48 + j16.2 2590 9.10 – j16.7 8.22 + j16.7 2690 14.3 – j9.20 14.6 + j10.3 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 3.21 – j10.5 13.4 51.2 131 54.4 –29 2.85 – j10.4 13.4 51.1 129 52.0 –30 2.86 – j11.6 13.4 51.2 133 52.9 –30 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2496 4.38 – j16.1 4.89 + j16.8 3.09 – j10.9 11.3 52.0 158 55.9 –35 2590 9.10 – j16.7 9.59 + j17.1 2.90 – j11.5 11.1 51.9 155 52.4 –35 2690 14.3 – j9.20 15.5 + j8.33 2.81 – j11.9 11.2 52.0 159 53.6 –35 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 0.6 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2496 4.38 – j16.1 4.03 + j16.3 7.25 – j9.48 14.5 49.7 94 62.3 –37 2590 9.10 – j16.7 7.54 + j17.0 6.65 – j9.17 14.4 49.8 95 61.3 –36 2690 14.3 – j9.20 14.3 + j12.1 5.07 – j8.46 14.5 49.7 94 62.5 –38 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 6.38 – j9.88 12.4 50.7 119 63.3 –43 8.95 + j17.5 6.25 – j9.36 12.4 50.6 116 62.4 –43 15.7 + j9.51 5.31 – j9.68 12.4 50.8 121 62.6 –42 f (MHz) Zsource () Zin () 2496 4.38 – j16.1 4.51 + j16.8 2590 9.10 – j16.7 2690 14.3 – j9.20 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T26H165--24SR3 8 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2590 MHz –2 –2 45 –4 E –8 –6 46 46.5 IMAGINARY () IMAGINARY () 45.5 45 –6 47 –10 P –12 47.5 48 48.5 –14 –18 0 2 8 6 REAL () 4 10 12 P –12 –18 14 60 58 50 0 2 4 52 56 54 10 8 6 REAL () 12 14 Figure 9. P1dB Load Pull Efficiency Contours (%) –2 –2 –4 –4 21 E 20.5 –8 20 –10 P –12 19.5 19 –14 17.5 –16 17 0 2 4 8 6 REAL () –26 –6 IMAGINARY () –6 IMAGINARY () 62 –10 –16 Figure 8. P1dB Load Pull Output Power Contours (dBm) –18 E –8 –14 –16 62 64 –4 –22 –20 E –18 –8 –16 –10 P –12 –14 –14 18.5 –24 –12 –16 18 10 12 14 Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: –18 –10 0 2 4 8 6 REAL () 10 12 14 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T26H165--24SR3 RF Device Data Freescale Semiconductor, Inc. 9 P3dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2590 MHz –2 –4 –4 46.5 45.5 –6 –6 E –8 47 –10 P –12 49.5 –14 49 0 2 8 6 REAL () 4 47.5 10 12 60 58 56 52 50 0 2 4 10 8 6 REAL () 54 12 14 Figure 13. P3dB Load Pull Efficiency Contours (%) –2 –2 –4 –4 19 –6 18.5 E –8 18 –10 17.5 P –12 17 –14 15.5 –16 15 0 2 4 8 6 REAL () –30 –6 IMAGINARY () IMAGINARY () 62 P –12 –18 14 64 –10 –16 Figure 12. P3dB Load Pull Output Power Contours (dBm) –18 66 E –8 –14 48 48.5 –16 –18 IMAGINARY () IMAGINARY () –2 46 –10 –18 P –12 –16 –14 16.5 –14 –16 16 10 12 14 Figure 14. P3dB Load Pull Gain Contours (dB) NOTE: –26 –24 –22 –20 E –8 –18 –28 0 2 4 8 6 REAL () 10 12 14 Figure 15. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T26H165--24SR3 10 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2590 MHz –5 47.5 –6 –6 47 –7 49 48 –8 –9 E –10 P –11 –8 IMAGINARY () –7 IMAGINARY () –5 48.5 49.5 50.5 51 50 –12 –14 –15 –15 –16 –16 8 6 10 58 –12 –14 4 P –11 –13 2 E –10 –13 0 60 –9 56 54 46 2 0 4 52 50 48 8 6 10 REAL () REAL () Figure 16. P1dB Load Pull Output Power Contours (dBm) Figure 17. P1dB Load Pull Efficiency Contours (%) –5 –5 –6 –6 –7 –7 –8 –9 E –10 P –11 14 –12 –13 0 2 4 –10 P –11 6 8 10 –36 –34 –12 –16 –32 –30 –28 –26 –15 12.5 –38 E –14 13 12 –15 –9 –13 13.5 11 11.5 –14 –16 IMAGINARY () IMAGINARY () –8 –42 –40 2 0 4 6 8 REAL () REAL () Figure 18. P1dB Load Pull Gain Contours (dB) Figure 19. P1dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 10 Gain Drain Efficiency Linearity Output Power A2T26H165--24SR3 RF Device Data Freescale Semiconductor, Inc. 11 P3dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2590 MHz –5 48.5 –6 48 –8 IMAGINARY () –6 –7 49.5 –9 E –10 –8 IMAGINARY () –7 –5 49 50 50.5 –11 51.5 P –12 51 –13 –9 E –10 62 60 –11 58 P –12 56 –13 –14 54 –14 –15 –15 –16 –16 2 0 4 8 6 10 46 2 0 4 48 52 50 8 6 10 REAL () Figure 20. P3dB Load Pull Output Power Contours (dBm) Figure 21. P3dB Load Pull Efficiency Contours (%) –5 –5 –6 –6 –7 –7 –8 –8 –9 E –10 –11 12 P –12 –13 9.5 –14 10 0 2 –46 –9 –10 –42 –11 –40 P –12 –38 –34 –15 6 8 10 –16 –44 E –14 11 4 –48 –13 11.5 10.5 9 –15 –16 IMAGINARY () IMAGINARY () REAL () –36 –32 2 0 4 6 8 REAL () REAL () Figure 22. P3dB Load Pull Gain Contours (dB) Figure 23. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 10 Gain Drain Efficiency Linearity Output Power A2T26H165--24SR3 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A2T26H165--24SR3 RF Device Data Freescale Semiconductor, Inc. 13 A2T26H165--24SR3 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2015 Description Initial Release of Data Sheet A2T26H165--24SR3 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. A2T26H165--24SR3 Document Number: A2T26H165--24S Rev. 0, 12/2015 16 RF Device Data Freescale Semiconductor, Inc.