Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2G22S251--01S
Rev. 0, 5/2016
RF Power GaN Transistor
This 48 W RF power GaN transistor is designed for cellular base station
applications covering the frequency range of 1805 to 2200 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 1805 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
A2G22S251--01SR3
2000 MHz
1805–2200 MHz, 48 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
 Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
17.4
33.5
7.0
–34.7
–14
1990 MHz
17.3
34.3
7.1
–35.1
–11
2170 MHz
17.7
37.5
6.8
–33.2
–12
NI--400S--2S
Features
 High Terminal Impedances for Optimal Broadband Performance
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
1 RFout/VDS
RFin/VGS 2
(Top View)
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2G22S251--01SR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
125
Vdc
Gate--Source Voltage
VGS
–8, 0
Vdc
Operating Voltage
VDD
0 to +55
Vdc
Maximum Forward Gate Current @ TC = 25C
IGMAX
24
mA
Storage Temperature Range
Tstg
– 65 to +150
C
Case Operating Temperature Range
TC
– 55 to +150
C
TJ
– 55 to +225
C
TMAX
275
C
Operating Junction Temperature Range
Absolute Maximum Junction Temperature
(1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
Case Temperature 84C, PD = 88 W
Thermal Resistance by Finite Element Analysis, Junction--to--Case
Case Temperature 85C, PD = 80 W
Symbol
Value
Unit
RJC (IR)
(2)
C/W
1.3
1.75 (3)
RJC (FEA)
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
II
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
150
—
—
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 mAdc)
VGS(th)
–3.8
–3.0
–2.3
Vdc
Gate Quiescent Voltage
(VDD = 48 Vdc, ID = 200 mAdc, Measured in Functional Test)
VGS(Q)
–3.6
–3.1
–2.3
Vdc
IGSS
–7.5
—
—
mAdc
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = –8 Vdc, ID = 20 mAdc)
On Characteristics
Gate--Source Leakage Current
(VDS = 0 Vdc, VGS = –5 Vdc)
1. Functional operation above 225C has not been characterized and is not implied. Operation at TMAX (275C) reduces median time to failure
by an order of magnitude; operation beyond TMAX could cause permanent damage.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. RJC (FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by the
expression MTTF (hours) = 10[A + B/(T + 273)], where T is the junction temperature in degrees Celsius, A = –10.3 and B = 8260.
(continued)
A2G22S251--01SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQ = 200 mA, Pout = 48 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
Gps
16.2
17.7
19.2
dB
Drain Efficiency
D
33.5
37.5
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
6.2
6.8
—
dB
ACPR
—
–33.2
–30
dBc
IRL
—
–12
–5
dB
Input Return Loss
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 200 mA, f = 1990 MHz, 12 sec(on), 10% Duty Cycle
VSWR 10:1 at 55 Vdc, 250 W Pulsed CW Output Power
(3 dB Input Overdrive from 170 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQ = 200 mA, 1805–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
158
—
W
Pout @ 3 dB Compression Point (2)
P3dB
—
195
—
W

—
–16.9
—

VBWres
—
140
—
MHz
Gain Flatness in 365 MHz Bandwidth @ Pout = 48 W Avg.
GF
—
0.36
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.014
—
dB/C
P1dB
—
0.002
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 5. Ordering Information
Device
A2G22S251--01SR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
Package
NI--400S--2S
1. Part internally input matched.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set VGS to the pinch--off (VP) voltage, typically –5 V
2. Turn on VDS to nominal supply voltage (50 V)
3. Increase VGS until IDS current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce VGS down to VP, typically –5 V
3. Reduce VDS down to 0 V (Adequate time must be allowed
for VDS to reduce to 0 V to prevent severe damage to device.)
4. Turn off VGS
A2G22S251--01SR3
RF Device Data
Freescale Semiconductor, Inc.
3
VDD
VGG
R2
C14
C1
C2
C4
C5
C6
C3
C8 C13
R1
CUT OUT AREA
C7
C12
C10
C9
C11
A2G22S251--01S
Rev. 2
D81388
Figure 2. A2G22S251--01SR3 Test Circuit Component Layout
Table 6. A2G22S251--01SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.8 pF Chip Capacitor
ATC600F1R8BT250XT
ATC
C2, C3
1.5 pF Chip Capacitors
ATC600F1R5BT250XT
ATC
C4, C11
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC
C5, C7
11 pF Chip Capacitors
ATC600F110JT250XT
ATC
C6
0.6 pF Chip Capacitor
ATC600F0R6BT250XT
ATC
C8, C9, C10
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C12, C13
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C14
220 F, 100 V Electrolytic Capacitor
MCGPR100V227M16X26-RH
Multicomp
R1
3.9 , 1/4 W Chip Resistor
CRCW12063R90FKEA
Vishay
R2
1.5 k, 1/4 W Chip Resistor
CRCW12061K50FKEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D81388
MTL
A2G22S251--01SR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1805–2170 MHz
32
PARC
17.4
17.2
–31
–6
–32
–9
–33
IRL
17
16.8
16.6
34
Gps
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
17.6
36
–34
–35
ACPR
1740
1800
1860
1920 1980 2040
f, FREQUENCY (MHz)
2100
–12
–15
–18
–36
2220
2160
–21
–2.6
–2.8
–3
–3.2
–3.4
PARC (dB)
Gps, POWER GAIN (dB)
18
17.8
38
D
18.2
IRL, INPUT RETURN LOSS (dB)
18.4
D, DRAIN
EFFICIENCY (%)
40
VDD = 48 Vdc, Pout = 48 W (Avg.), IDQ = 200 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
ACPR (dBc)
18.6
–3.6
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 48 Watts Avg.
0
VDD = 48 Vdc, Pout = 70 W (PEP), IDQ = 200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1990 MHz
–15
IM3--U
–30
IM3--L
IM5--L
–45
IM7--L
IM7--U
–60
–75
IM5--U
10
TWO--TONE SPACING (MHz)
1
300
100
18.5
0
18
17.5
17
16.5
16
VDD = 48 Vdc, IDQ = 200 mA, f = 1990 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
D
–2 dB = 36.8 W
–1
–1 dB = 21.5 W
–2
–5
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
0
15
30
45
Pout, OUTPUT POWER (WATTS)
–10
20
PARC
–3 dB = 51.6W
50
30
Gps
–4
0
40
ACPR
–3
60
60
75
–20
–30
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–40
10
–50
0
–60
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2G22S251--01SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1805–2170 MHz
18
1805 MHz
17
16
ACPR
2170 MHz
1990 MHz
1805 MHz
1
50
–10
30
20
2170 MHz
1990 MHz
1805 MHz
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
15
0
40
2170 MHz
1990 MHz
60
10
Gps
100
10
0
200
–20
–30
–40
ACPR (dBc)
Gps, POWER GAIN (dB)
19
14
D
VDD = 48 Vdc, IDQ = 200 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
D, DRAIN EFFICIENCY (%)
20
–50
–60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
19
GAIN (dB)
5
VDD = 48 Vdc
Pin = 0 dBm
IDQ = 200 mA
0
–5
Gain
18
–10
17
–15
16
15
1500
–20
IRL
1650
1800
IRL (dB)
21
1950 2100 2250
f, FREQUENCY (MHz)
2400
2550
–25
2700
Figure 7. Broadband Frequency Response
A2G22S251--01SR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Load Pull Performance — Maximum Power Tuning
VDD = 48 Vdc, IDQ = 222 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
Zsource
()
Zin
()
1805
2.35 – j6.11
2.60 + j6.52
1990
4.56 – j7.73
6.02 + j8.13
2170
10.1 – j2.50
9.62 + j1.70
f
(MHz)
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.39 – j2.34
18.8
53.1
202
55.9
–13
2.38 – j3.05
18.4
52.7
185
54.2
–13
2.62 – j3.64
18.2
52.5
177
51.4
–11
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
2.35 – j6.11
2.67 + j6.93
3.62 – j3.15
17.1
54.4
277
63.8
–15
1990
4.56 – j7.73
6.90 + j8.73
3.70 – j4.14
16.6
54.2
263
61.0
–16
2170
10.1 – j2.50
9.93 + j0.17
3.70 – j4.12
16.6
54.0
254
60.5
–16
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Load Pull Performance — Maximum Efficiency Tuning
VDD = 48 Vdc, IDQ = 222 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1805
2.35 – j6.11
2.07 + j7.17
2.18 – j0.08
20.5
50.9
124
68.5
–29
1990
4.56 – j7.73
5.77 + j9.93
2.25 – j0.84
20.2
50.5
113
65.5
–27
2170
10.1 – j2.50
12.1 – j0.35
2.03 – j1.14
20.2
50.2
104
63.8
–27
Max Drain Efficiency
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2.56 – j0.03
18.7
52.1
161
75.8
–37
7.18 + j10.9
2.84 – j0.78
18.5
51.9
156
73.8
–36
11.0 – j2.92
2.30 – j1.05
18.4
51.5
140
72.1
–39
f
(MHz)
Zsource
()
Zin
()
1805
2.35 – j6.11
2.13 + j7.61
1990
4.56 – j7.73
2170
10.1 – j2.50
Zload
()
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
A2G22S251--01SR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 1990 MHz
1
1
49.5
E
–1
50
50.5
–2
51.5
–3
51
P
3
REAL ()
1
4
–5
5
20
19.5
P
2
3
REAL ()
17.5
2
18
3
REAL ()
4
5
–20
–22
E
–1
–26
–28
–24
–2
–18
–16
–14
–3
–12
P
19
–4
1
52
1
20.5
E
56
Figure 9. P1dB Load Pull Efficiency Contours (%)
IMAGINARY ()
IMAGINARY ()
1
0
–2
–5
58
P
54
21.5
21
–3
60
–3
Figure 8. P1dB Load Pull Output Power Contours (dBm)
–1
62
–2
50
2
0
64
–4
52
1
E
–1
52
52.5
–4
–5
0
48.5
49
IMAGINARY ()
IMAGINARY ()
0
–4
18.5
4
5
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
–5
2
1
3
REAL ()
4
5
Figure 11. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2G22S251--01SR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 1990 MHz
3
3
2
51
IMAGINARY ()
0
E
–1
52
53
–3
–4
P
54
–5
2
3
4
REAL ()
5
6
64
70
–3
–4
66
68
P
1
2
3
4
REAL ()
5
6
7
Figure 13. P3dB Load Pull Efficiency Contours (%)
3
3
2
2
1
1
19.5
0
E
–1
18.5
–2
18
–3
17.5
–4
P
17
–5
2
3
4
REAL ()
5
7
6
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
–30 –28 –26 –24
–2
–22
–20
–3
–18
–4
P
–6
16
15.5
–32
E
–1
–5
16.5
–6
1
–34
0
19
IMAGINARY ()
IMAGINARY ()
–2
–7
7
Figure 12. P3dB Load Pull Output Power Contours (dBm)
–7
72
–6
53
1
62
E
–1
–5
53.5
–6
60
0
51.5
52.5
–2
58
1
50.5
IMAGINARY ()
1
–7
2
50
–7
1
2
3
4
REAL ()
5
6
7
Figure 15. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
A2G22S251--01SR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
A2G22S251--01SR3
10
RF Device Data
Freescale Semiconductor, Inc.
A2G22S251--01SR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2016
Description
 Initial Release of Data Sheet
A2G22S251--01SR3
12
RF Device Data
Freescale Semiconductor, Inc.
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implementers to use Freescale products. There are no express or implied copyright
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information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
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disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
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other product or service names are the property of their respective owners.
E 2016 Freescale Semiconductor, Inc.
A2G22S251--01SR3
Document
Number:
RF
Device
Data A2G22S251--01S
Rev. 0, 5/2016Semiconductor, Inc.
Freescale
13