Data Sheet

Freescale Semiconductor
Technical Data
Document Number: A2G35S160--01S
Rev. 0, 5/2016
RF Power GaN Transistor
This 32 W RF power GaN transistor is designed for cellular base station
applications covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 3400 to 3600 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
3500 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQ = 190 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz
15.6
37.2
7.0
–33.6
–16
3500 MHz
15.7
36.7
7.2
–34.1
–16
3600 MHz
15.9
38.9
7.2
–33.2
–13
A2G35S160--01SR3
3400–3600 MHz, 32 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
Features
NI--400S--2S
 High Terminal Impedances for Optimal Broadband Performance
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
1 RFout/VDS
RFin/VGS 2
(Top View)
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2G35S160--01SR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
125
Vdc
Gate--Source Voltage
VGS
–8, 0
Vdc
Operating Voltage
VDD
0 to +55
Vdc
Maximum Forward Gate Current @ TC = 25C
IGMAX
19
mA
Storage Temperature Range
Tstg
– 65 to +150
C
Case Operating Temperature Range
TC
– 55 to +150
C
TJ
– 55 to +225
C
TMAX
275
C
Operating Junction Temperature Range
Absolute Maximum Junction Temperature
(1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
Case Temperature 76C, PD = 66 W
Thermal Resistance by Finite Element Analysis, Junction--to--Case
Case Temperature 85C, PD = 65 W
Symbol
Value
Unit
RJC (IR)
(2)
C/W
2.5 (3)
C/W
1.9
RJC (FEA)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
150
—
—
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 18.9 mAdc)
VGS(th)
–3.8
–3.1
–2.3
Vdc
Gate Quiescent Voltage
(VDD = 48 Vdc, ID = 190 mAdc, Measured in Functional Test)
VGS(Q)
–3.6
–2.6
–2.3
Vdc
IGSS
–5.9
—
—
mAdc
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = –8 Vdc, ID = 18.9 mAdc)
On Characteristics
Gate--Source Leakage Current
(VDS = 0 Vdc, VGS = –5 Vdc)
1. Functional operation above 225C has not been characterized and is not implied. Operation at TMAX (275C) reduces median time to failure
by an order of magnitude; operation beyond TMAX could cause permanent damage.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. RJC (FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by the
expression MTTF (hours) = 10[A + B/(T + 273)], where T is the junction temperature in degrees Celsius, A = –8.44 and B = 7210.
(continued)
A2G35S160--01SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1) (In
Functional Tests
Freescale Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQ = 190 mA, Pout = 32 W Avg., f = 3500 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
Gps
13.5
15.7
18.0
dB
Drain Efficiency
D
31.6
36.7
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
6.6
7.2
—
dB
ACPR
—
–34.1
–31.8
dBc
IRL
—
–16
–8
dB
Input Return Loss
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 190 mA, f = 3500 MHz, 12 sec(on), 10% Duty Cycle
VSWR 10:1 at 55 Vdc, 153 W Pulsed CW Output Power
(3 dB Input Overdrive from 126 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQ = 190 mA, 3400–3600 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
126
—
W
Pout @ 3 dB Compression Point (2)
P3dB
—
162
—
W

—
–15.6
—

VBWres
—
110
—
MHz
Gain Flatness in 200 MHz Bandwidth @ Pout = 32 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.02
—
dB/C
P1dB
—
0.01
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 3400–3600 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(–30C to +85C)
Table 5. Ordering Information
Device
A2G35S160--01SR3
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
Package
NI--400S--2S
1. Part internally input matched.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set VGS to the pinch--off (VP) voltage, typically –5 V
2. Turn on VDS to nominal supply voltage (50 V)
3. Increase VGS until IDS current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce VGS down to VP, typically –5 V
3. Reduce VDS down to 0 V (Adequate time must be allowed
for VDS to reduce to 0 V to prevent severe damage to device.)
4. Turn off VGS
A2G35S160--01SR3
RF Device Data
Freescale Semiconductor, Inc.
3
C22
C15 C13
C3 C1
C16 C14
C4 C2
C6
C17
R2
C20 C18
CUT OUT AREA
R1
C5
C7
C10 C8
C12
C11
C9
C21 C19
A2G35S160--01S
Rev. 1
D74587
C23
Figure 2. A2G35S160--01SR3 Test Circuit Component Layout
Table 6. A2G35S160--01SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C8, C13, C18
0.022 F Chip Capacitors
GRM31MR72A223KA01L
Murata
C2, C9, C14, C19
1 nF Chip Capacitors
GRM1885C2A102JA01D
Murata
C3, C10, C15, C20
1 F Chip Capacitors
GRM31CR72A105KA01L
Murata
C4, C11, C16, C21
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C5, C17
12 pF Chip Capacitors
GQM1875C2E120FB12D
Murata
C6, C12
15 pF Chip Capacitors
GQM1875C2E150JB12D
Murata
C7
0.6 pF Chip Capacitor
ATC600F0R6BW250XT
ATC
C22, C23
330 F, 63 V Electrolytic Capacitors
MCRH63V337M13X21-RH
Multicomp
R1, R2
5.60 , 1/4 W Chip Resistors
CRCW12065R60FKEA
Vishay
PCB
Rogers RO4350B, 0.023, r = 3.66
D74587
MTL
A2G35S160--01SR3
4
RF Device Data
Freescale Semiconductor, Inc.
38
37
D
15.9
36
15.8
Gps
15.7
15.6
15.4
ACPR
3410
3440
–12
–33
IRL
15.3
3380
–11
–32
PARC
15.5
–30
–31
3470
3500
3530
3560
3590
–34
–35
3620
–13
–14
–15
–16
–2.2
–2.4
–2.6
–2.8
–3
PARC (dB)
16
39
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 48 Vdc, Pout = 32 W (Avg.), IDQ = 190 mA
16.2 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
16.1 Input Signal PAR = 9.9 dB @ 0.01%, Probability on CCDF
IRL, INPUT RETURN LOSS (dB)
40
16.3
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 3400–3600 MHz
–3.2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 32 Watts Avg.
0
VDD = 48 Vdc, Pout = 60 W (PEP), IDQ = 190 mA
Two--Tone Measurements, (f1 + f2)/2 = Center Frequency
–15 of 3500 MHz
IM3--U
–30
IM5--U
–45
IM3--L
IM5--L
IM7--L IM7--U
–60
–75
10
1
100
300
TWO--TONE SPACING (MHz)
16.5
0
16
15.5
15
14.5
14
VDD = 48 Vdc, IDQ = 190 mA, f = 3500 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
–15
50
–20
D
Gps
40
–1
–1 dB = 16.4 W
–2
30
–2 dB = 25.5 W
–3
ACPR
–4
–5
60
20
–3 dB = 34.5 W
PARC
10
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
5
15
25
35
45
0
55
–25
–30
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
–35
–40
–45
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
A2G35S160--01SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 3400–3600 MHz
15 3400 MHz
3500 MHz
3600 MHz
3500 MHz
3400 MHz
–15
55
–20
45
35
3600 MHz
Gps
12
25
3400 MHz
9
15
3500 MHz
3600 MHz
D
6
ACPR
65
1
10
100
5
200
–25
–30
–35
ACPR (dBc)
VDD = 48 Vdc, IDQ = 190 mA
Single--Carrier W--CDMA, 3.84 MHz
21 Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
18
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
24
–40
–45
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
GAIN (dB)
16
0
VDD = 48 Vdc
Pin = 0 dBm
IDQ = 190 mA
Gain
–3
14
–6
12
–9
10
–12
8
6
2700
–15
IRL
2850
3000
3150
3300
3450
IRL (dB)
18
3600
3750
–18
3900
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
A2G35S160--01SR3
6
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
A2G35S160--01SR3
RF Device Data
Freescale Semiconductor, Inc.
7
A2G35S160--01SR3
8
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2016
Description
 Initial Release of Data Sheet
A2G35S160--01SR3
RF Device Data
Freescale Semiconductor, Inc.
9
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E 2016 Freescale Semiconductor, Inc.
A2G35S160--01SR3
Document Number: A2G35S160--01S
Rev. 0, 5/2016
10
RF Device Data
Freescale Semiconductor, Inc.