Freescale Semiconductor Technical Data Document Number: AFV141KH Rev. 0, 4/2016 AFV141KH AFV141KHS AFV141KGS RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These RF power devices are designed for commercial applications operating at frequencies from 1200 to 1400 MHz such as commercial L--Band radars. The devices are suitable for use in pulse applications. Typical Pulse Performance: In 1200–1400 MHz reference circuit, VDD = 50 Vdc, 1200–1400 MHz, 1000 W PEAK, 50 V AIRFAST RF POWER LDMOS TRANSISTORS IDQ(A+B) = 100 mA, Pin = 25 W Frequency (MHz) 1200 1300 Pout (W) Gps (dB) D (%) 950 Peak 15.8 46.5 1120 Peak 16.5 47.5 1000 Peak 16.1 46.6 Signal Type Pulse (300 sec, 12% Duty Cycle) 1400 NI--1230H--4S AFV141KH Load Mismatch/Ruggedness Frequency (MHz) 1400 (1) Signal Type VSWR Pin (W) Test Voltage Pulse (128 sec, 10% Duty Cycle) > 20:1 at All Phase Angles 31.6 Peak (3 dB Overdrive) 50 Result NI--1230S--4S AFV141KHS No Device Degradation 1. Measured in 1400 MHz narrowband production circuit. Features NI--1230GS--4L AFV141KGS Internally Input and Output Matched for Broadband Operation and Ease of Use Device Can Be Used in a Single--Ended, Push--Pull or Quadrature Configuration Qualified up to a Maximum of 50 VDD Operation High Ruggedness, Handles > 20:1 VSWR Integrated ESD Protection with Greater Negative Voltage Range for Improved Class C Operation and Gate Voltage Pulsing Characterized with Series Equivalent Large--Signal Impedance Parameters Typical Applications Commercial L--Band Radar Systems Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFV141KH AFV141KHS AFV141KGS 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +105 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Storage Temperature Range Tstg – 65 to +150 C TC –40 to +150 C TJ –40 to +225 C PD 910 4.55 W W/C Symbol Value (2,3) Unit ZJC 0.018 C/W Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Impedance, Junction to Case Case Temperature 60C, 1000 W Peak, 128 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1400 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 200 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 1 Adc V(BR)DSS 105 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 105 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 520 Adc) VGS(th) 1.3 1.8 2.3 Vdc Gate Quiescent Voltage (5) (VDD = 50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test) VGS(Q) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 2.6 Adc) VDS(on) 0.05 0.16 0.35 Vdc Crss — 2.98 — pF Characteristic Off Characteristics (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) On Characteristics Dynamic Characteristics (5) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) 1. 2. 3. 4. 5. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Each side of device measured separately. Measurement made with device in push--pull configuration. (continued) AFV141KH AFV141KHS AFV141KGS 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W Peak (100 W Avg.), f = 1400 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps 16.0 17.7 19.5 dB Drain Efficiency D 46.0 52.1 — % Input Return Loss IRL — –18 –9 dB Load Mismatch/Ruggedness (In Freescale Narrowband Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) Signal Type 1400 Pulse (128 sec, 10% Duty Cycle) VSWR > 20:1 at all Phase Angles Pin (W) 31.6 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 5. Ordering Information Device Tape and Reel Information AFV141KHR5 AFV141KHSR5 AFV141KGSR5 Package NI--1230H--4S, Eared R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--1230S--4S, Earless NI--1230GS--4L, Gull Wing 1. Measurement made with device in push--pull configuration. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. AFV141KH AFV141KHS AFV141KGS RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 300 1.08 Measured with 30 mV(rms) ac @ 1 MHz VGS = 0 Vdc 1.06 NORMALIZED VGS(Q) C, CAPACITANCE (pF) 100 Crss 10 VDD = 50 Vdc 500 mA IDQ(A+B) = 100 mA 1.04 1.02 1500 mA 1 2500 mA 0.98 0.96 0.94 1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 0.92 –50 –25 0 25 50 75 100 TC, CASE TEMPERATURE (C) Note: Each side of device measured separately. IDQ (mA) Figure 2. Capacitance versus Drain--Source Voltage 100 –2.06 500 –1.96 1500 –1.94 2500 –1.72 Slope (mV/C) Figure 3. Normalized VGS versus Quiescent Current and Case Temperature AFV141KH AFV141KHS AFV141KGS 4 RF Device Data Freescale Semiconductor, Inc. 1400 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4 6 (10.2 cm 15.2 cm) C11 COAX1 C9 C4 C6 C2 C16 C20 C19* C15 C5 C14 C12 CUT OUT AREA C10 C17 C35 COAX3 L1 C27* C28* C29* C24* C30* C31* C32* C18* R2 COAX2 C25 C22 C13 R1 C3 C33 AFV141KH Rev. 1 D70087 C7 C1 C21 L2 C23 COAX4 C26 C8 C34 C36 * C18, C19, C24, C27, C28, C29, C30, C31 and C32 are mounted vertically. Figure 4. AFV141KH(HS) Narrowband Test Circuit Component Layout — 1400 MHz Table 6. AFV141KH(HS) 1400 MHz Narrowband Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C3 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C4, C5, C9, C10, C13, C14, C22, C23 27 pF Chip Capacitors ATC100B270JT500XT ATC C6 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C7, C8 2.2 F Chip Capacitors C1825C225J5RACTU Kemet C11, C12 0.1 F Chip Capacitors CDR33BX104AKY9S AVX C15 2.2 pF Chip Capacitor ATC100B2R2BT500XT ATC C16, C17 0.7 pF Chip Capacitors ATC100B0R7BT500XT ATC C18 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C19 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C20, C21 2.2 pF Chip Capacitors ATC100B2R2BT500XT ATC C24 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C25, C26 0.01 F Chip Capacitors C1825C103K1GACTU Kemet C27, C28, C29, C30, C31, C32 27 pF Chip Capacitors ATC100B270JT500XT ATC C33, C34, C35, C36 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp Coax1, Coax2, Coax3, Coax4 35 Semi Rigid Coax 1.454 Shield Length HSF-141-35-C Hongsen Cable L1, L2 17.5 nH, 4 Turn Inductors GA3095-ALC Coilcraft R1, R2 100 , 1 W Chip Resistors CRCW2512100RFKEG Vishay PCB Arlon AD255A, 0.03, r = 2.55 D70087 MTL AFV141KH AFV141KHS AFV141KGS RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 1400 MHz PRODUCTION TEST FIXTURE Gps, POWER GAIN (dB) 19 90 62 80 60 70 18 60 Gps 17 50 16 40 D 15 30 14 20 13 10 12 10 Pout, OUTPUT POWER (dBm) PEAK VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1400 MHz 20 Pulse Width = 128 sec, Duty Cycle = 10% D, DRAIN EFFICIENCY (%) 21 58 56 54 52 50 48 46 44 29 0 1000 2000 100 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1400 MHz Pulse Width = 128 sec, Duty Cycle = 10% 31 33 35 37 39 41 43 45 Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 5. Power Gain and Drain Efficiency versus Output Power f (MHz) P1dB (W) P3dB (W) 1400 948 1079 Figure 6. Output Power versus Input Power 20 VDD = 50 Vdc, f = 1400 MHz Pulse Width = 128 sec, Duty Cycle = 10% 18 500 mA 300 mA 16 14 Pout, OUTPUT POWER (WATTS) PEAK 50 V 14 45 V 40 V 35 V VDD = 30 V 100 1000 10 2000 10 1000 2000 100 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Power Gain versus Output Power Figure 8. Power Gain versus Output Power 23 VDD = 50 Vdc, IDQ(A=B) = 100 mA, f = 1400 MHz Pulse Width = 128 sec, Duty Cycle = 10% VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1400 MHz Pulse Width = 128 sec, Duty Cycle = 10% 21 TC = –40_C 1000 25_C 85_C 800 600 400 29 31 33 35 37 39 41 43 Pin, INPUT POWER (dBm) PEAK Figure 9. Output Power versus Input Power 45 55 45 TC = –40_C 17 15 65 25_C –40_C Gps 19 35 85_C 25_C 13 200 0 27 16 12 100 mA 12 10 1200 Gps, POWER GAIN (dB) IDQ(A+B) = 700 mA 18 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 20 1400 IDQ(A + B) = 100 mA, f = 1400 MHz, Pulse Width = 128 sec, Duty Cycle = 10% 11 30 25 D 85_C 15 1000 100 D, DRAIN EFFICIENCY (%) 22 0 2000 Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Power Gain and Drain Efficiency versus Output Power AFV141KH AFV141KHS AFV141KGS 6 RF Device Data Freescale Semiconductor, Inc. 1400 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource Zload 1400 7.35 – j4.62 1.3 – j.072 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + Device Under Test -- -- + Zsource Zload Output Matching Network Figure 11. Narrowband Series Equivalent Source and Load Impedance — 1400 MHz AFV141KH AFV141KHS AFV141KGS RF Device Data Freescale Semiconductor, Inc. 7 PACKAGE DIMENSIONS AFV141KH AFV141KHS AFV141KGS 8 RF Device Data Freescale Semiconductor, Inc. AFV141KH AFV141KHS AFV141KGS RF Device Data Freescale Semiconductor, Inc. 9 AFV141KH AFV141KHS AFV141KGS 10 RF Device Data Freescale Semiconductor, Inc. AFV141KH AFV141KHS AFV141KGS RF Device Data Freescale Semiconductor, Inc. 11 AFV141KH AFV141KHS AFV141KGS 12 RF Device Data Freescale Semiconductor, Inc. AFV141KH AFV141KHS AFV141KGS RF Device Data Freescale Semiconductor, Inc. 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. 0 Apr. 2016 Initial Release of Data Sheet AFV141KH AFV141KHS AFV141KGS 14 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. 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