Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF1314H
Rev. 0, 3/2016
MMRF1314H
MMRF1314HS
MMRF1314GS
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These RF power devices are designed for pulse applications operating at
frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse
applications and are ideal for use in high power military and commercial L--Band
radar applications.
Typical Short Pulse Performance: In 1200–1400 MHz reference circuit, VDD = 52 Vdc,
1200–1400 MHz, 1000 W PEAK, 52 V
AIRFAST RF POWER LDMOS
TRANSISTORS
IDQ(A+B) = 100 mA
Frequency
(MHz)
1200
1300
Pout
(W)
Gps
(dB)
D
(%)
1130 Peak
15.5
47.5
1170 Peak
17.2
47.0
1000 Peak
17.0
46.5
Signal Type
Pulse
(128 sec, 10% Duty Cycle)
1400
NI--1230H--4S
MMRF1314H
Load Mismatch/Ruggedness
Frequency
(MHz)
1400
Signal Type
VSWR
Pin
(W)
Test
Voltage
Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at
All Phase
Angles
31.6 Peak
(3 dB
Overdrive)
52
NI--1230S--4S
MMRF1314HS
Result
No Device
Degradation
Features
 Internally input and output matched for broadband operation and ease of use
NI--1230GS--4L
MMRF1314GS
 Device can be used in a single--ended, push--pull or quadrature configuration
 Qualified up to a maximum of 52 VDD operation
 High ruggedness, handles > 20:1 VSWR
 Integrated ESD protection with greater negative voltage range for improved
Class C operation and gate voltage pulsing
Gate A 3
1 Drain A
Gate B 4
2 Drain B
 Characterized with series equivalent large--signal impedance parameters
Typical Applications
 Military and commercial L--Band radar systems
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1314H MMRF1314HS MMRF1314GS
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +105
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Storage Temperature Range
Tstg
– 65 to +150
C
TC
–40 to +150
C
TJ
–40 to +225
C
PD
909
4.55
W
W/C
Symbol
Value (2)
Unit
ZJC
0.018
C/W
Case Operating Temperature Range
Operating Junction Temperature Range
(1)
Total Device Dissipation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Case Temperature 60C, 1000 W Peak, 128 sec Pulse Width,
10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1400 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
B, passes 200 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
V(BR)DSS
105
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 520 Adc)
VGS(th)
1.3
1.8
2.3
Vdc
Gate Quiescent Voltage (4)
(VDD = 50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test)
VGS(Q)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage (3)
(VGS = 10 Vdc, ID = 2.6 Adc)
VDS(on)
0.05
0.16
0.35
Vdc
Crss
—
2.98
—
pF
Characteristic
Off Characteristics (3)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 Adc)
On Characteristics
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
Measurement made with device in push--pull configuration.
(continued)
MMRF1314H MMRF1314HS MMRF1314GS
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2) (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W
Peak (100 W Avg.), f = 1400 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps
16.0
17.7
19.5
dB
Drain Efficiency
D
46.0
52.1
—
%
Input Return Loss
IRL
—
–18
–9
dB
Load Mismatch/Ruggedness (In Freescale Narrowband Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal
Type
1400
Pulse
(128 sec,
10% Duty Cycle)
VSWR
> 20:1 at all Phase Angles
Pin
(W)
31.6 Peak
(3 dB Overdrive)
Test Voltage, VDD
Result
52
No Device Degradation
Table 5. Ordering Information
Device
Tape and Reel Information
MMRF1314HR5
MMRF1314HSR5
MMRF1314GSR5
Package
NI--1230H--4S, Eared
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--1230S--4S, Earless
NI--1230GS--4L, Gull Wing
1. Measurement made with device in push--pull configuration.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
MMRF1314H MMRF1314HS MMRF1314GS
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
300
1.08
Measured with 30 mV(rms) ac @ 1 MHz VGS = 0 Vdc
1.06
NORMALIZED VGS(Q)
C, CAPACITANCE (pF)
100
Crss
10
VDD = 50 Vdc
500 mA
IDQ(A+B) = 100 mA
1.04
1.02
1500 mA
1
2500 mA
0.98
0.96
0.94
1
0
10
20
30
40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
0.92
–50
–25
0
25
50
75
100
TC, CASE TEMPERATURE (C)
Note: Each side of device measured separately.
IDQ (mA)
Figure 2. Capacitance versus Drain--Source Voltage
100
–2.06
500
–1.96
1500
–1.94
2500
–1.72
Slope (mV/C)
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
MMRF1314H MMRF1314HS MMRF1314GS
4
RF Device Data
Freescale Semiconductor, Inc.
1400 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4.0  6.0 (10.2 cm  15.2 cm)
MMRF1314H
Rev. 0
D81261
C7
C1
C11
COAX1
C9
C4 C6
C2
C16
C20
L1
C27*
C28*
C29*
C30*
C31*
C32*
C18*
C10
C17
C14
C12
CUT OUT AREA
C5
C35
COAX3
C19* C24*
C15
R2
COAX2
C25
C22
C13
R1
C3
C33
C21 L2
C23
COAX4
C26
C8
C34
C36
* C18, C19, C24, C27, C28, C29, C30, C31 and C32 are mounted vertically.
Figure 4. MMRF1314H(HS) Narrowband Test Circuit Component Layout — 1400 MHz
Table 6. MMRF1314H(HS) 1400 MHz Narrowband Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C3
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C4, C5, C9, C10, C13, C14,
C22, C23
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C6
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C7, C8
2.2 F Chip Capacitors
C1825C225J5RACTU
Kemet
C11, C12
0.1 F Chip Capacitors
CDR33BX104AKY9S
AVX
C15
2.2 pF Chip Capacitor
ATC100B2R2BT500XT
ATC
C16, C17
0.7 pF Chip Capacitors
ATC100B0R7BT500XT
ATC
C18
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C19
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C20, C21
2.2 pF Chip Capacitors
ATC100B2R2BT500XT
ATC
C24
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C25, C26
0.01 F Chip Capacitors
C1825C103K1GACTU
Kemet
C27, C28, C29, C30, C31, C32
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C33, C34, C35, C36
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
Coax1, Coax2, Coax3, Coax4
35  Semi Rigid Coax 1.454 Shield Length
HSF-141-35-C
Hongsen Cable
L1, L2
17.5 nH, 4 Turn Inductors
GA3095-ALC
Coilcraft
R1, R2
100 , 1 W Chip Resistors
CRCW2512100RFKEG
Vishay
PCB
Arlon AD255A, 0.03, r = 2.55
D81261
MTL
MMRF1314H MMRF1314HS MMRF1314GS
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1400 MHz
PRODUCTION TEST FIXTURE
Gps, POWER GAIN (dB)
19
90
62
80
60
70
18
60
Gps
17
50
16
40
D
15
30
14
20
13
10
12
10
Pout, OUTPUT POWER (dBm) PEAK
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1400 MHz
20 Pulse Width = 128 sec, Duty Cycle = 10%
D, DRAIN EFFICIENCY (%)
21
58
56
54
52
50
48
46
44
29
0
1000 2000
100
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1400 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
31
33
35
37
39
41
43
45
Pin, INPUT POWER (dBm) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 5. Power Gain and Drain Efficiency
versus Output Power
f
(MHz)
P1dB
(W)
P3dB
(W)
1400
948
1079
Figure 6. Output Power versus Input Power
20
VDD = 50 Vdc, f = 1400 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
18
500 mA
300 mA
16
14
Pout, OUTPUT POWER (WATTS) PEAK
50 V
14
45 V
40 V
35 V
VDD = 30 V
100
1000
10
2000
10
1000 2000
100
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain versus Output Power
23
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1400 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1400 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
21
TC = –40_C
1000
25_C
85_C
800
600
400
29
31
33
35
37
39
41
43
Pin, INPUT POWER (dBm) PEAK
Figure 9. Output Power versus Input Power
45
55
45
TC = –40_C
17
15
65
25_C –40_C
Gps
19
35
85_C
25_C
13
200
0
27
16
12
100 mA
12
10
1200
Gps, POWER GAIN (dB)
IDQ(A+B) = 700 mA
18
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
20
1400
IDQ(A + B) = 100 mA, f = 1400 MHz,
Pulse Width = 128 sec, Duty Cycle = 10%
11
30
25
D
85_C
15
1000
100
D, DRAIN EFFICIENCY (%)
22
0
2000
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency versus
Output Power
MMRF1314H MMRF1314HS MMRF1314GS
6
RF Device Data
Freescale Semiconductor, Inc.
1400 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource

Zload

1400
7.35 – j4.62
1.3 – j.072
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured
from drain to drain, balanced configuration.
+
Device
Under
Test
--
--
+
Zsource
Zload
Output
Matching
Network
50 
Figure 11. Narrowband Series Equivalent Source and Load Impedance — 1400 MHz
MMRF1314H MMRF1314HS MMRF1314GS
RF Device Data
Freescale Semiconductor, Inc.
7
PACKAGE DIMENSIONS
MMRF1314H MMRF1314HS MMRF1314GS
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1314H MMRF1314HS MMRF1314GS
RF Device Data
Freescale Semiconductor, Inc.
9
MMRF1314H MMRF1314HS MMRF1314GS
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1314H MMRF1314HS MMRF1314GS
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF1314H MMRF1314HS MMRF1314GS
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1314H MMRF1314HS MMRF1314GS
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION
Refer to the following resources to aid your design process.
Application Notes
 AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Mar. 2016
Description
 Initial Release of Data Sheet
MMRF1314H MMRF1314HS MMRF1314GS
14
RF Device Data
Freescale Semiconductor, Inc.
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MMRF1314H MMRF1314HS MMRF1314GS
Document
Number:
RF
Device
Data MMRF1314H
Rev. 0, 3/2016Semiconductor, Inc.
Freescale
15