Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF1312H
Rev. 0, 3/2016
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These RF power devices are designed for pulse applications operating at
frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse
applications with large duty cycles and long pulses and are ideal for use in high
power military and commercial L--Band radar applications such as IFF and
DME/TACAN.
MMRF1312H
MMRF1312HS
MMRF1312GS
900–1215 MHz, 1000 W PEAK, 52 V
AIRFAST RF POWER LDMOS
TRANSISTORS
Typical Short Pulse Performance: In 900–1215 MHz reference circuit,
VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
1615 Peak
15.2
54.0
1560 Peak
17.3
55.7
1030
1500 Peak
17.8
53.8
1090
1530 Peak
18.0
54.5
1215
1200 Peak
19.2
58.5
900
960
Signal Type
Pulse
(128 sec, 10% Duty Cycle)
NI--1230H--4S
MMRF1312H
NI--1230S--4S
MMRF1312HS
Load Mismatch/Ruggedness
Frequency
(MHz)
1030 (1)
Signal Type
VSWR
Pulse
(128 sec, 10%
Duty Cycle)
> 20:1 at all
Phase Angles
Pin
(W)
Test
Voltage
20.2 Peak
(3 dB
Overdrive)
52
Result
No Device
Degradation
NI--1230GS--4L
MMRF1312GS
1. Measured in 1030 MHz narrowband reference circuit.
Features
 Internally input and output matched for broadband operation and ease of use
Gate A 3
1 Drain A
Gate B 4
2 Drain B
 Device can be used in a single--ended, push--pull or quadrature configuration
 Qualified up to a maximum of 52 VDD operation
 High ruggedness, handles > 20:1 VSWR
 Integrated ESD protection with greater negative voltage range for improved
Class C operation and gate voltage pulsing
 Characterized with series equivalent large--signal impedance parameters
Typical Applications
 Air traffic control systems (ATC), including ground--based secondary radars
such as IFF interrogators or transponders
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
 Distance measuring equipment (DME)
 Tactical air navigation (TACAN)
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1312H MMRF1312HS MMRF1312GS
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +112
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Storage Temperature Range
Tstg
– 65 to +150
C
TC
–40 to 150
C
Case Operating Temperature Range
Operating Junction Temperature
Range (1)
Total Device Dissipation @ TC = 25C
Derate above 25C
TJ
–40 to 225
C
PD
1053
5.26
W
W/C
Symbol
Value (2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Pulse: Case Temperature 64C, 1000 W Peak, 128 sec Pulse Width,
10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1030 MHz
ZJC
C/W
0.017
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
B, passes 250 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
V(BR)DSS
112
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 112 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 520 Adc)
VGS(th)
1.3
1.8
2.3
Vdc
Gate Quiescent Voltage (4)
(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.0
2.5
Vdc
Drain--Source On--Voltage (3)
(VGS = 10 Vdc, ID = 2.6 Adc)
VDS(on)
0.05
0.17
0.35
Vdc
Crss
—
2.5
—
pF
Characteristic
Off Characteristics
(3)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
On Characteristics
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
Measurement made with device in push--pull configuration.
(continued)
MMRF1312H MMRF1312HS MMRF1312GS
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2) (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W
Peak (100 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps
18.5
19.6
22.0
dB
Drain Efficiency
D
55.5
59.7
—
%
Input Return Loss
IRL
—
–15
–9
dB
Table 5. Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
1030
Signal Type
VSWR
Pin
(W)
Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at all
Phase Angles
20.2 Peak
(3 dB Overdrive)
Test Voltage, VDD
Result
52
No Device
Degradation
Table 6. Ordering Information
Device
Tape and Reel Information
MMRF1312HR5
MMRF1312HSR5
MMRF1312GSR5
Package
NI--1230H--4S, Eared
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--1230S--4S, Earless
NI--1230GS--4L, Gull Wing
1. Measurement made with device in push--pull configuration.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
MMRF1312H MMRF1312HS MMRF1312GS
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
1.08
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
20
30
40
500 mA
1.02
1500 mA
1
0.98
0.96
0.92
–50
1
10
1.04
VDD = 50 Vdc
0.94
Crss
0
IDQ(A+B) = 100 mA
1.06
NORMALIZED VGS(Q)
C, CAPACITANCE (pF)
100
50
–25
0
25
50
75
100
TC, CASE TEMPERATURE (C)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
IDQ (mA)
Figure 2. Capacitance versus Drain--Source Voltage
Slope (mV/C)
100
–2.36
500
–2.26
1500
–1.84
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
109
VDD = 50 Vdc
Pulse Width = 128 sec
10% Duty Cycle
MTTF (HOURS)
108
ID = 26.74 Amps
107
34.04 Amps
39.03 Amps
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature — Pulse
MMRF1312H MMRF1312HS MMRF1312GS
4
RF Device Data
Freescale Semiconductor, Inc.
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4.0  5.0 (10.2 cm  12.7 cm)
C1
C27
B1 C3
MMRF1312H
Rev. 0
D82114
C5
C7
C29
C19
C13
R1
C10
C9
COAX2
C2
C12
C11
C21*
C22*
C23*
C17*
C18*
C24*
C25*
C26*
R2
B2 C4
C8
C6
CUT OUT AREA
COAX1
L1
COAX3
L2
COAX4
C15
C16
C14
C28
C20
C30
* C17, C18, C21, C22, C23, C24, C25 and C26 are mounted vertically.
Figure 5. MMRF1312H(HS) Narrowband Test Circuit Component Layout — 1030 MHz
Table 7. MMRF1312H(HS) Narrowband Test Circuit Component Designations and Values — 1030 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Short RF Bead
2743019447
Fair-Rite
C1, C2
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C3, C4
2.2 F Chip Capacitors
C1825C225J5RACTU
Kemet
C5, C6
0.1 F Chip Capacitors
CDR33BX104AKWS
AVX
C7, C8
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C9
2.7 pF Chip Capacitor
ATC100B2R7CT500XT
ATC
C10, C11
30 pF Chip Capacitors
ATC100B300JT500XT
ATC
C12
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C13, C14
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C15, C16
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C17
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C18
4.3 pF Chip Capacitor
ATC100B4R3CT500XT
ATC
C19, C20
0.01 F Chip Capacitors
C1825C103K1GACTU
Kemet
C21, C22, C23, C24, C25, C26
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C27, C28, C29, C30
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
Coax1, Coax2, Coax3, Coax4
35  Flex Cable 1.98
HSF-141C-35
Hongsen Cable
L1, L2
12 H, 3 Turn Inductors
GA3094-ALC
Coilcraft
R1, R2
1.1 k, 1/4 W Chip Resistors
CRCW12061K10FKEA
Vishay
PCB
Arlon, AD255A, 0.03, r = 2.55
D82114
MTL
MMRF1312H MMRF1312HS MMRF1312GS
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 1030 MHz
NARROWBAND PRODUCTION TEST FIXTURE
Gps, POWER GAIN (dB)
21
20
80
62
70
60
60
19
50
Gps
18
17
40
30
D
Pout, OUTPUT POWER PEAK
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
D, DRAIN EFFICIENCY (%)
22
58
56
54
52
16
20
15
10
48
0
46
29
14
30
1000
100
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
50
31
33
35
37
39
41
43
45
Pin, INPUT POWER (dBm) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
f
(MHz)
P1dB
(W)
P3dB
(W)
1030
1002
1115
Figure 7. Output Power versus Input Power
60
IDQ(A+B) = 700 mA
19
50
500 mA
18
40
300 mA
17
30
16
20
100 mA
15
14
Pout, OUTPUT POWER (WATTS) PEAK
1400
1200
100
1000
18
17
50 V
45 V
16
15
14
13
40 V
35 V
VDD = 30 V
11
10
30
0
100
1000
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
Figure 9. Power Gain versus Output Power
24
VDD = 50 Vdc, IDQ(A=B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
TC = –40_C
800
85_C
600
400
200
20
TC = –40_C
TC = –40_C
50
85_C
25_C
25_C
14
12
D
85_C
33
35
37
39
41
43
Pin, INPUT POWER (dBm) PEAK
Figure 10. Output Power versus Input Power
45
8
30
40
30
20
10
10
31
70
60
Gps
18
16
80
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
22
25_C
1000
0
29
IDQ(A + B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
12
10
30
21
20
19
D, DRAIN EFFICIENCY (%)
20
70
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
21
22
80
VDD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Gps, POWER GAIN (dB)
22
0
1000
100
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain and Drain Efficiency versus
Output Power
MMRF1312H MMRF1312HS MMRF1312GS
6
RF Device Data
Freescale Semiconductor, Inc.
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource

Zload

1030
2.40 -- j3.73
1.9 + j1.00
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured
from drain to drain, balanced configuration.
+
Device
Under
Test
--
--
+
Zsource
Zload
Output
Matching
Network
50 
Figure 12. Narrowband Series Equivalent Source and Load Impedance — 1030 MHz
MMRF1312H MMRF1312HS MMRF1312GS
RF Device Data
Freescale Semiconductor, Inc.
7
PACKAGE DIMENSIONS
MMRF1312H MMRF1312HS MMRF1312GS
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1312H MMRF1312HS MMRF1312GS
RF Device Data
Freescale Semiconductor, Inc.
9
MMRF1312H MMRF1312HS MMRF1312GS
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1312H MMRF1312HS MMRF1312GS
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF1312H MMRF1312HS MMRF1312GS
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1312H MMRF1312HS MMRF1312GS
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION
Refer to the following resources to aid your design process.
Application Notes
 AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Mar. 2016
Description
 Initial Release of Data Sheet
MMRF1312H MMRF1312HS MMRF1312GS
14
RF Device Data
Freescale Semiconductor, Inc.
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E 2016 Freescale Semiconductor, Inc.
MMRF1312H MMRF1312HS MMRF1312GS
Document
Number:
RF
Device
Data MMRF1312H
Rev. 0, 3/2016Semiconductor, Inc.
Freescale
15