Ordering number : ENA1617B TF256TH N-Channel JFET http://onsemi.com 20V, 140 to 450μA, 1.7mS, VTFP Features • • • • • • High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteristics Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions Ratings Unit VGDO IG Gate Current Drain Current ID PD Allowable Power Dissipation Junction Temperature Tj Storage Temperature Tstg --20 V 10 mA 1 mA 100 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7031A-001 • Package : VTFP • JEITA, JEDEC : SC-106A • Minimum Packing Quantity : 8,000 pcs./reel 1.4 0.1 3 TF256TH-3-TL-H TF256TH-4-TL-H TF256TH-5-TL-H Packing Type: TL Marking 1 2 RANK N LOT No. LOT No. 0.8 0 to 0.02 0.2 1.2 0.2 0.25 TL 0.2 0.45 0.34 Electrical Connection 0.07 0.07 1 1 2 3 1 : Drain 2 : Source 3 : Gate 3 VTFP 2 Semiconductor Components Industries, LLC, 2013 August, 2013 91212 TKIM/10511 TKIM TC-00002535/N2509GB TKIM TC-00002097 No. A1617-1/7 TF256TH Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDO VGS(off) Cutoff Voltage Drain Current | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Rank IG=--100μA VDS=2V, ID=1μA IDSS* Forward Transfer Admittance Ratings Conditions min typ max --20 --0.1 VDS=2V, VGS=0V V --0.35 --1.0 3 100 180 4 140 280 5 240 450 VDS=2V, VGS=0V, f=1kHz 0.75 VDS=2V, VGS=0V, f=1MHz Unit 1.7 V μA mS 3.1 pF 1.0 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV Reduced Voltage Characteristic VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=2.0V → 1.5V ΔGVV Frequency Characteristic THD Output Noise Voltage 1.0 4 2.0 5 3.0 3 --0.5 --1.0 4 --0.6 --1.3 5 --0.9 --2.0 3 1.4 f=1kHz to 110Hz ΔGvf Total Harmonic Distortion 3 --1.0 VIN=30mV, f=1kHz VNO dB VIN=0V, A curve 4 0.9 5 0.35 --105 dB dB % --100 dB * : The TF256TH is classified by IDSS as follows : (unit : μA) Rank IDSS 3 100 to 180 4 140 to 280 5 240 to 450 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 5pF 2.2kΩ VCC=2.0V VCC=1.5V 33μF + VTVM V THD OSC Ordering Information Package Shipping TF256TH-3-TL-H Device VTFP 8,000pcs./reel TF256TH-4-TL-H VTFP 8,000pcs./reel TF256TH-5-TL-H VTFP 8,000pcs./reel memo Pb Free and Halogen Free No. A1617-2/7 TF256TH ID -- VDS 100 --0.15V 50 --0.20V --0.25V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 250 75 °C 25 °C Ta = Drain Current, ID -- μA 300 100 C 5° --2 50 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 Gate-to-Source Voltage, VGS -- V | yfs | -- IDSS 2.0 1.5 1.0 0.5 100 150 VGS(off) -- IDSS 200 250 300 350 400 450 Drain Current, IDSS -- μA IT15215 500 IT16272 Ciss -- VDS 10 VDS=2V ID=1μA 0 IT16271 VDS=2V VGS=0V f=1kHz 0 50 0 VGS=0V f=1MHz 7 0.40 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V Gate-to-Source Voltage, VGS -- V 2.5 350 0.45 A 0μ 10 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 5.0 400 0.50 A 0μ 15 IT15213 VDS=2V 150 150 50 --0.30V ID -- VGS 200 200 100 Drain-to-Source Voltage, VDS -- V 450 250 0μ A 150 45 0μ A --0.10V 300 30 200 350 S= Drain Current, ID -- μA --0.05V Forward Transfer Admittance, | yfs | -- mS Drain Current, ID -- μA 400 300 250 VDS=2V 450 V GS=0V 350 ID -- VGS 500 ID S 400 0.35 0.30 0.25 0.20 0.15 0.10 5 3 2 0.05 0 50 100 150 200 250 300 350 400 450 Drain Current, IDSS -- μA 5 3.5 VGS=0V f=1MHz 3.0 2 1.0 7 5 7 2 1.0 3 5 7 2.5 2.0 GV -- IDSS 2 10 Drain-to-Source Voltage, VDS -- V Voltage Gain, GV -- dB Reverse Transfer Capacitance, Crss -- pF 3 IT16273 Crss -- VDS 3 1.0 500 IT15218 GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.5 1.0 0.5 0 3 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 IT15219 --0.5 50 100 150 200 250 300 350 Drain Current, IDSS -- μA 400 450 500 IT16274 No. A1617-3/7 TF256TH GV -- VCC GV : VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF 6 Voltage Gain, GV -- dB 5 4 3 6 150μA 2 100μA 1 0 4 450μA I DSS= 300μA 150μA 100μA 2 0 --2 --4 --6 --2 --8 --3 --10 2 3 4 5 ΔGVV -- IDSS 0 6 ΔGVV : VCC=2V→1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 50 100 150 200 250 300 350 400 Drain Current, IDSS -- μA 450 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 150 200 250 300 350 Drain Current, IDSS -- μA 4 400 450 500 IT16279 6 8 10 12 Electret Capacitance, Cin -- pF THD -- VIN 100 7 5 14 16 IT16276 THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF 3 2 A 100μ I DSS= 10 7 5 A 150μ 3 2 1.0 7 5 A 300μ A 450μ 3 2 0.1 500 THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 2.2 2 0 50 100 150 Input Voltage, VIN -- mV IT16277 THD -- IDSS 2.4 0 IT16275 Total Harmonic Distortion, THD -- % 1 PD -- Ta 120 Allowable Power Dissipation, PD -- mW 0 Supply Voltage, VCC -- V Reduced Voltage Characteristic, ΔGVV -- dB GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ 8 450μA I DSS= 300μA --1 Total Harmonic Distortion, THD -- % GV -- Cin 10 Voltage Gain, GV -- dB 7 200 IT16278 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15227 No. A1617-4/7 TF256TH Taping Specification TF256TH-3-TL-H, TF256TH-4-TL-H, TF256TH-5-TL-H No. A1617-5/7 TF256TH Outline Drawing TF256TH-3-TL-H, TF256TH-4-TL-H, TF256TH-5-TL-H Land Pattern Example Mass (g) Unit 0.0012 mm * For reference Unit: mm 1.1 0.4 0.5 0.45 0.45 0.45 0.45 No. A1617-6/7 TF256TH ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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