Data Sheet 10V Drive Nch MOSFET R5016FNX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 0.8 (1) Gate (2) Drain (3) Source 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) R5016FNX Inner circuit Bulk 500 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous VGSS ID *3 ∗1 (1) Gate (2) Drain (3) Source Limits Unit 500 30 V V 16 A Pulsed Continuous IDP IS *1 *3 64 16 A A Pulsed ISP *1 64 A 8 17.1 50 A mJ W 150 55 to 150 C C Limits 2.5 Unit C / W Avalanche current Avalanche energy IAS *2 EAS *2 Power dissipation Channel temperature Range of storage temperature PD *4 Tch Tstg (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25°C *3 Limited only by maximum channel temperature allowed. *4 TC=25°C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) * * T C=25°C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet R5016FNX Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit - - 100 nA VGS=30V, VDS=0V 500 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 100 A VDS=500V, VGS=0V VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA RDS (on)* - 0.25 0.325 ID=8A, VGS=10V l Yfs l* 6.2 11 - S VDS=10V, ID=8A Input capacitance Ciss - 1700 - pF VDS=25V Output capacitance Coss - 1000 - pF VGS=0V Reverse transfer capacitance Crss - 35 - pF f=1MHz Turn-on delay time td(on) * - 35 - ns VDD 250V, ID=8.0A tr * - 60 - ns VGS=10V Turn-off delay time td(off) * - 110 - ns RL=31.25 Fall time tf * Qg * Qgs * Qgd * - 35 - ns RG=10 - 46 - nC VDD 250V - 11 19 - nC nC ID=8.0A VGS=10V Min. Typ. Max. VSD * - - trr * 75 100 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward voltage Reverse recovery time Symbol Unit Conditions 1.5 V IS=16A, VGS=0V 125 ns IS=16A, VGS=0V di/dt=100A/s *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet R5016FNX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) FIg.2 Typical Output Characteristics (Ⅱ) 5 20 Ta=25℃ pulsed Ta=25℃ pulsed VGS=10V 4 VGS=7V Drain Current : ID [A] Drain Current : ID [A] VGS=7V VGS=8V 15 VGS=8V 3 VGS=10.0V VGS=6.5V VGS=6V 2 10 VGS=6V 5 VGS=5.5V 1 VGS=6.5V VGS=5.5V VGS=5V 0 0 0.2 0.4 0.6 0.8 VGS=5V 0 1 0 8 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature 6 VDS=10V ID=1mA pulsed 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 Gate Threshold Voltage : VGS(th) [V] Drain Currnt : ID [A] 6 Fig.3 Typical Transfer Characteristics VDS=10V pulsed 0.1 0.01 2 3 4 5 6 7 5 4 3 2 8 -50 0 Gate-Source Voltage : VGS [V] 50 100 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 1 0.6 VGS=10V pulsed 0.1 1 10 Static Drain-Source On-State Resistance : RDS(on) [Ω] Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Static Drain-Source On-State Resistance RDS(on) [Ω] 0.1 4 Drain-Source Voltage : VDS [V] 100 0.001 2 Drain-Source Voltage : VDS [V] ID=16A 0.4 ID=8A 0.2 0 100 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. VGS=10V pulsed -50 0 50 100 150 Channel Temperature : T ch [℃] 3/6 2011.10 - Rev.A Data Sheet R5016FNX Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 100 100 VGS=0V pulsed 10 10 Source Current : IS [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.01 0.1 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.1 10 0.01 100 0 0.5 Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1.5 2 Fig.10 Switching Characteristics 1 10000 Ta=25℃ pulsed 0.9 VDD≒250V VGS=10V RG=10Ω Ta=25℃ Pulsed tf 0.8 1000 0.7 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [Ω] 1 Source-Drain Voltage : VSD [V] Drain Current : ID [A] 0.6 0.5 0.4 ID=16A 0.3 td(off) 100 0.2 td(on) tr 10 ID=8A 0.1 0 0 2 4 6 1 8 10 12 14 16 18 20 22 24 26 28 30 0.01 0.1 Gate-Source Voltage : VGS [V] 100 100000 Ta=25℃ VDD=250V ID=8A Pulsed 10 10000 8 Capacitance : C [pF] Gate-Source Voltage : VGS [V] 10 Fig.12 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics 12 6 4 Ta=25℃ f=1MHz VGS=0V 1000 Ciss Coss 100 Crss 10 2 0 1 Drain Current : ID [A] 0 10 20 30 40 50 1 60 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 4/6 2011.10 - Rev.A Data Sheet R5016FNX Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.14 Maximum Safe Operating Area 1000 Ta=25℃ Single Pulse 1 100 Rth(ch-a)=48.9℃/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Drain Current : ID [ A ] Normalized Transient Thermal Resistance : r（t） 10 0.1 0.01 PW = 100μs 10 PW = 1ms Operation in this area is limited by RDS(on) (VGS = 10V) 1 PW = 10ms 0.1 0.001 Ta=25℃ Single Pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 100 0.01 1000 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Pulse width : Pw (s) Fig.15 Reverse Recovery Time vs. Source Current 1000 Reverse Recovery Time : trr [ns] Ta=25℃ Vgs=0V di/dt=100A/us Pulsed 100 10 0 1 10 100 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet R5016FNX Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A