SUD70N02-05P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.005 @ VGS = 10 V 30 0.0083 @ VGS = 4.5 V 23 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested D D D D D Synchronous Buck DC/DC Conversion - Desktop - Server G S Top View Order Number: SUD70N02-05P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC= 25_C Pulsed Drain Current 70b Maximum Power Dissipation TC = 25_C Operating Junction and Storage Temperature Range A 100 IS TA = 25_C V 30a ID IDM Continuous Source Current (Diode Conduction)a Unit 30 7.5a PD W 65 TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 16 20 40 50 1.9 2.3 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 71930 S-31724—Rev. B, 18-Aug-03 www.vishay.com 1 SUD70N02-05P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.005 0.0064 0.0083 0.007 VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs mA A 0.0041 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 VDS = 15 V, ID = 20 A W 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance 2550 VGS = 0 V, VDS = 10 V, f = 1 MHz 900 19 0.5 tr Turn-Off Delay Timec VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W td(off) Fall Timec nC 6.0 td(on) Rise Timec 30 7.5 VDS = 10 V, VGS = 4.5 V, ID = 50 A Rg Turn-On Delay Timec pF p 415 tf 1.5 2.8 11 20 10 15 24 35 9 15 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 160 140 VGS = 10 thru 5 V 80 I D - Drain Current (A) I D - Drain Current (A) 120 4V 100 80 60 3V 40 20 40 TC = 125_C 20 25_C 2V - 55_C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 60 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 71930 S-31724—Rev. B, 18-Aug-03 SUD70N02-05P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 100 0.010 80 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) TC = - 55_C 25_C 125_C 60 40 20 0 0.008 VGS = 4.5 V 0.006 VGS = 6.3 V 0.004 VGS = 10 V 0.002 0.000 0 10 20 30 40 50 0 20 40 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 2500 2000 1500 Coss Crss 500 0 32 40 VDS = 10 V ID = 50 A 8 6 4 2 0 0 4 8 12 16 0 20 8 VDS - Drain-to-Source Voltage (V) 1.4 On-Resistance vs. Junction Temperature 24 Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A 1.2 1.0 0.8 0.6 - 50 16 Qg - Total Gate Charge (nC) I S - Source Current (A) 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 100 Gate Charge 10 3000 1000 80 ID - Drain Current (A) Capacitance 3500 60 - 25 0 25 50 75 100 125 TJ - Junction Temperature (_C) Document Number: 71930 S-31724—Rev. B, 18-Aug-03 150 175 TJ = 150_C TJ = 25_C 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) www.vishay.com 3 SUD70N02-05P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 32 10, 100 ms 100 I D - Drain Current (A) I D - Drain Current (A) Safe Operating Area 1000 40 24 16 8 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 ms 1s 10 s 100 s dc 1 0.01 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71930 S-31724—Rev. 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