SPD21N05L SPU21N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code SPD21N05L 55 V 20 A 0.07 Ω P-TO252 Q67040 - S4137- A2 SPU21N05L 55 V 20 A 0.07 Ω P-TO251 Q67040 - S4131 - A2 Maximum Ratings Parameter Symbol Continuous drain current ID Values A TC = 25 °C 20 TC = 100 °C 14 Pulsed drain current Unit IDpuls 80 TC = 25 °C Avalanche energy, single pulse mJ EAS ID = 20 A, V DD = 25 V, RGS = 25 Ω L = 450 µH, Tj = 25 °C 90 Avalanche current,limited by Tjmax IAR 20 A Avalanche energy,periodic limited by Tjmax EAR 5.5 mJ Reverse diode dv/dt dv /dt kV/µs IS = 20 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation Ptot TC = 25 °C Semiconductor Group ± 14 V W 55 1 29/Jan/1998 SPD21N05L SPU21N05L Maximum Ratings Parameter Symbol Values Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 2.7 Thermal resistance, junction - ambient (PCB mount)** RthJA ≤ 50 Thermal resistance, junction - ambient RthJA ≤ 100 IEC climatic category, DIN IEC 68-1 Unit °C K/W 55 / 175 / 56 ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 1.2 1.6 2 V GS(th) V GS=V DS, ID = 40 µA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 50 V, V GS = 0 V, Tj = -40 °C - - 0.1 V DS = 50 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 50 V, V GS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-resistance nA IGSS - 10 100 Ω RDS(on) V GS = 4.5 V, ID = 14 A - 0.057 0.07 V GS = 10 V, ID = 14 A - 0.034 0.04 Semiconductor Group 2 29/Jan/1998 SPD21N05L SPU21N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 14 A Input capacitance 7 pF - 560 700 - 170 215 - 95 120 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 14 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω Rise time - 15 25 - 35 55 - 15 25 - 15 25 tr V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω Fall time tf V DD = 30 V, VGS = 4.5 V, ID = 20 A RG = 10 Ω Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Gate charge at 5.0 V 1.2 - 15 23 - 24 36 V V (plateau) V DD = 40 V, ID = 20 A Semiconductor Group 0.8 Qg(total) V DD = 40 V, ID = 20 A, VGS =0 to 10 V Gate plateau voltage Qg(5) V DD = 40 V, ID = 20 A, VGS =0 to 5 V Gate charge total nC Qg(th) - 3 4.06 - 29/Jan/1998 SPD21N05L SPU21N05L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed - - 80 V 1.12 1.8 ns trr - 50 75 µC Qrr - V R = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 20 - V R = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD V GS = 0 V, IF = 40 A Reverse recovery time ISM TC = 25 °C Inverse diode forward voltage A IS 4 0.12 0.18 29/Jan/1998 SPD21N05L SPU21N05L Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 4 V 60 22 W A 50 Ptot ID 45 18 16 40 14 35 12 30 10 25 8 20 6 15 10 4 5 2 0 0 0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 TC °C 180 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 3 K/W A ID ZthJC 10 2 10 0 t = 28.0µs p DS (o n) = V DS /I D 10 -1 100 µs R D = 0.50 10 -2 0.20 10 1 0.10 0.05 10 1 ms 0.02 -3 0.01 single pulse 10 ms 10 0 0 10 10 1 DC V 10 10 -4 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 29/Jan/1998 SPD21N05L SPU21N05L Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 45 Ptot = 55W l Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.22 k j i h ID VGS [V] a 2.5 35 f 30 25 e 20 d 15 10 a Ω g A b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 b c d 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 c e f gh i j 0.04 VGS [V] = 5 0.02 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 0 5.0 VDS a 3.0 2.5 3.5 b 4.0 4 c 4.5 8 d 5.0 12 e f 5.5 6.0 16 g 6.5 20 i h j 7.0 8.0 10.0 24 28 A 36 ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 80 A I D 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 29/Jan/1998 SPD21N05L SPU21N05L Gate threshold voltage Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 14 A, VGS = 4.5 V V GS(th)= f (Tj) parameter:VGS=VDS,ID = 40µA 0.24 3.0 Ω V 2.6 0.20 RDS (on) 0.18 VGS(th) 2.4 2.2 0.16 2.0 0.14 1.8 1.6 0.12 1.4 98% 0.10 1.2 typ 0.08 1.0 max 0.8 0.06 0.6 0.04 typ 0.4 0.02 0.2 0.0 0.00 -60 -20 20 60 100 °C 180 -60 min -20 20 60 100 140 V 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A IF C 10 3 10 1 Ciss Coss 10 2 10 0 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS Semiconductor Group 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 29/Jan/1998 SPD21N05L SPU21N05L Avalanche energy EAS = f (Tj) Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 20 A parameter:ID=20A,VDD =25 V RGS =25 Ω , L = 450µH 100 16 mJ EAS V 80 VGS 12 70 10 60 50 8 0,2 VDS max 40 0,8 VDS max 6 30 4 20 2 10 0 20 0 40 60 80 100 120 140 °C 180 Tj 0 4 8 12 16 20 24 28 nC 34 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 29/Jan/1998