SMBTA42M NPN Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA92M (PNP) 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 DC collector current IC 500 Base current IB 100 Total power dissipation, TS 83 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 45 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA42M Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 300 - - V(BR)CBO 300 - - V(BR)EBO 6 - - ICBO - - 100 nA ICBO - - 20 µA IEBO - - 100 nA DC characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector-base cutoff current VCB = 200 V, TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 40 - - VCEsat - - 0.5 VBEsat - - 0.9 50 - - MHz - - 3 pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency fT IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance Ccb VCB = 20 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 SMBTA42M Total power dissipation Ptot = f(TS) DC current gain hFE = f (I C) VCE = 10V 10 3 1.8 mW EHP00844 5 h FE 1.4 P tot SMBTA 42/43 10 2 1.2 5 1 0.8 0.6 10 1 0.4 5 0.2 0 0 15 30 45 60 75 90 105 120 10 0 -1 10 °C 150 TS 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Nov-30-2001 SMBTA42M Collector cutoff current ICBO = f (TA) Collector current I C = f (VBE) VCB = 160V VCE = 10 V 10 4 nA Ι CBO SMBTA 42/43 EHP00842 10 3 SMBTA 42/43 EHP00843 mA ΙC max 10 3 5 10 2 5 10 2 5 10 1 typ 10 1 5 5 10 0 10 5 0 5 10 -1 10 -1 0 50 0 C 150 100 0.5 V 1.0 1.5 V BE TA 4 Nov-30-2001