INFINEON SMBTA42M

SMBTA42M
NPN Silicon High-Voltage Transistor
4
High breakdown voltage
Low collector-emitter saturation voltage
5
Complementary type: SMBTA92M (PNP)
3
2
1
VPW05980
Type
Marking
SMBTA42M
s1D
Pin Configuration
1=B
2=C 3=E
Package
4=n.c. 5 = C SCT595
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
300
Collector-base voltage
VCBO
300
Emitter-base voltage
VEBO
6
DC collector current
IC
500
Base current
IB
100
Total power dissipation, TS 83 °C
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
mA
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
45
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBTA42M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
300
-
-
V(BR)CBO
300
-
-
V(BR)EBO
6
-
-
ICBO
-
-
100
nA
ICBO
-
-
20
µA
IEBO
-
-
100
nA
DC characteristics
Collector-emitter breakdown voltage
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 200 V, IE = 0
Collector-base cutoff current
VCB = 200 V, TA = 150 °C
Emitter cutoff current
VEB = 3 V, IC = 0
DC current gain 1)
-
hFE
IC = 1 mA, VCE = 10 V
25
-
-
IC = 10 mA, VCE = 10 V
40
-
-
IC = 30 mA, VCE = 10 V
40
-
-
VCEsat
-
-
0.5
VBEsat
-
-
0.9
50
-
-
MHz
-
-
3
pF
Collector-emitter saturation voltage1)
V
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
fT
IC = 10 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 20 V, f = 1 MHz
1) Pulse test: t < 300s; D < 2%
2
Nov-30-2001
SMBTA42M
Total power dissipation Ptot = f(TS)
DC current gain hFE = f (I C)
VCE = 10V
10 3
1.8
mW
EHP00844
5
h FE
1.4
P tot
SMBTA 42/43
10 2
1.2
5
1
0.8
0.6
10 1
0.4
5
0.2
0
0
15
30
45
60
75
90 105 120
10 0
-1
10
°C 150
TS
5 10 0
5 10 1
5 10 2 mA 10 3
ΙC
Permissible Pulse Load
Permissible Pulse Load RthJS = f (tp )
Ptotmax / PtotDC = f (tp)
10 3
Ptotmax / PtotDC
10 2
RthJS
K/W
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
-
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
3
Nov-30-2001
SMBTA42M
Collector cutoff current ICBO = f (TA)
Collector current I C = f (VBE)
VCB = 160V
VCE = 10 V
10 4
nA
Ι CBO
SMBTA 42/43
EHP00842
10 3
SMBTA 42/43
EHP00843
mA
ΙC
max
10 3
5
10 2
5
10 2
5
10 1
typ
10 1
5
5
10 0
10
5
0
5
10 -1
10 -1
0
50
0
C 150
100
0.5
V
1.0
1.5
V BE
TA
4
Nov-30-2001