BSS 159 Preliminary data SIPMOS ® Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Pin 1 Pin 2 G Pin 3 S D Type VDS ID RDS(on) Package Ordering Code BSS 159 50 V 0.16 A 8Ω SOT-23 Q67050-T6 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ Values Unit 50 V 50 Gate source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current ID TA = 25 °C A 0.16 IDpuls DC drain current, pulsed TA = 25 °C 0.48 Ptot Power dissipation TA = 25 °C W 0.36 Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 350 Therminal resistance, chip-substrate - reverse side 1) RthJSR ≤ 285 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 May-30-1996 BSS 159 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage V VGS = -10 V, ID = 250 µA Gate threshold voltage 50 - - -3 -2.5 -1.5 VGS(th) VDS = 3 V, ID = 10 µA Drain-source cutoff current V (BR)DSV IDSV µA VDS = 50 V, VGS = -10 V, Tj = 25 °C - - 1 VDS = 50 V, VGS = -10 V, Tj = 125 °C - - - On-state drain current ID(on) VGS = 0 V, VDS = 10 V Gate-source leakage current 70 nA - 10 100 Ω RDS(on) VGS = 0 V, ID = 0.07 A Semiconductor Group 200 IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance mA - 2 4 8 May-30-1996 BSS 159 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.16 A Input capacitance 0.1 pF - 70 100 - 15 25 - 6 9 Crss VGS = -4.5 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = -4.5 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.16 Ciss VGS = -4.5 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50 Ω Rise time - 7 11 - 11 17 - 13 17 - 14 19 tr VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = -5... + 5 V, ID = 0.28 A RGS = 50 Ω Semiconductor Group 3 May-30-1996 BSS 159 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - 0.1 - - 0.3 VSD VGS = 0 V, IF = 0.3 A Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 0.8 1.3 May-30-1996