TYSEMI BSS83P

SMD Type
Product specification
BSS 83 P
SIPMOS  Small-Signal-Transistor
Features
Product Summary
· P-Channel
Drain source voltage
VDS
·
Drain-source on-state resistance
RDS(on)
Continuous drain current
ID
Enhancement mode
· Avalanche rated
· Logic Level
-60
V
2
W
-0.33
A
3
· dv/dt rated
2
1
Type
Package
Ordering Code
Marking
BSS 83 P
SOT-23
Q67041-S1416
YAs
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Pin 1
PIN 2
PIN 3
G
S
D
Value
ID
Continuous drain current
-0.33
T A = 70 °C
-0.27
I D puls
Unit
A
T A = 25 °C
Pulsed drain current
VPS05161
-1.32
T A = 25 °C
Avalanche energy, single pulse
EAS
9.5
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
0.036
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
0.36
W
-55...+150
°C
I D = -0.33 A , V DD = -25 V, RGS = 25 W
mJ
kV/µs
I S = -0.33 A, V DS = -48 V, di/dt = 200 A/µs,
T jmax = 150 °C
T A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
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T j , T stg
55/150/56
4008-318-123
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SMD Type
Product specification
BSS 83 P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
150
@ min. footprint
-
-
350
@ 6 cm 2 cooling area 1)
-
-
300
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
( Pin 3 )
SMD version, device on PCB:
RthJA
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-60
-
-
Gate threshold voltage, VGS = VDS
I D = -80 µA
VGS(th)
-1
-1.5
-2
Zero gate voltage drain current
IDSS
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, I D = -250 µA
µA
VDS = -60 V, V GS = 0 V, T j = 25 °C
-
-0.1
-1
VDS = -60 V, V GS = 0 V, T j = 125 °C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
2
3
W
RDS(on)
-
1.4
2
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
VGS = -4.5 V, I D = -0.27 A
Drain-source on-state resistance
VGS = -10 V, I D = -0.33 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
http://www.twtysemi.com
[email protected]
4008-318-123
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SMD Type
Product specification
BSS 83 P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
0.24
0.47
-
S
Input capacitance
Ciss
-
62
78
pF
Coss
-
19
24
Crss
-
7
9
t d(on)
-
23
35
tr
-
71
106
t d(off)
-
56
70
tf
-
61
76
VDS³2*I D*RDS(on)max , ID = -0.27 A
VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time
ns
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
Rise time
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
Turn-off delay time
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
Fall time
VDD = -30 V, V GS = -4.5 V, I D = -0.27 A,
RG = 43 W
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SMD Type
Product specification
BSS 83 P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Q gs
-
0.12
0.18
Q gd
-
1.1
1.65
Qg
-
2.38
3.57
V(plateau)
-
-2.94
-
Dynamic Characteristics
Gate to source charge
nC
VDD = -48 V, ID = -0.33 A
Gate to drain charge
VDD = -48 , ID = -0.33 A
Gate charge total
VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V
Gate plateau voltage
V
VDD = -48 V , I D = -0.33 A
Parameter
Symbol
Values
Unit
min.
typ.
max.
IS
-
-
-0.33
ISM
-
-
-1.32
VSD
-
-0.84
-1.1
V
trr
-
59.4
89
ns
Qrr
-
37.5
56
nC
Reverse Diode
Inverse diode continuous forward current
A
T A = 25 °C
Inverse diode direct current,pulsed
T A = 25 °C
Inverse diode forward voltage
VGS = 0 V, I F = -0.33
Reverse recovery time
VR = -30 V, IF=I S , di F/dt = 80 A/µs
Reverse recovery charge
VR = -30 V, IF=l S , diF/dt = 80 A/µs
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