SMD Type Product specification BSS 83 P SIPMOS Small-Signal-Transistor Features Product Summary · P-Channel Drain source voltage VDS · Drain-source on-state resistance RDS(on) Continuous drain current ID Enhancement mode · Avalanche rated · Logic Level -60 V 2 W -0.33 A 3 · dv/dt rated 2 1 Type Package Ordering Code Marking BSS 83 P SOT-23 Q67041-S1416 YAs Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Pin 1 PIN 2 PIN 3 G S D Value ID Continuous drain current -0.33 T A = 70 °C -0.27 I D puls Unit A T A = 25 °C Pulsed drain current VPS05161 -1.32 T A = 25 °C Avalanche energy, single pulse EAS 9.5 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR 0.036 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W -55...+150 °C I D = -0.33 A , V DD = -25 V, RGS = 25 W mJ kV/µs I S = -0.33 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com [email protected] T j , T stg 55/150/56 4008-318-123 1 of 4 SMD Type Product specification BSS 83 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 150 @ min. footprint - - 350 @ 6 cm 2 cooling area 1) - - 300 Characteristics Thermal resistance, junction - soldering point RthJS K/W ( Pin 3 ) SMD version, device on PCB: RthJA Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -80 µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 2 3 W RDS(on) - 1.4 2 Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -4.5 V, I D = -0.27 A Drain-source on-state resistance VGS = -10 V, I D = -0.33 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 SMD Type Product specification BSS 83 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs 0.24 0.47 - S Input capacitance Ciss - 62 78 pF Coss - 19 24 Crss - 7 9 t d(on) - 23 35 tr - 71 106 t d(off) - 56 70 tf - 61 76 VDS³2*I D*RDS(on)max , ID = -0.27 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Rise time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Turn-off delay time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Fall time VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W http://www.twtysemi.com [email protected] 4008-318-123 3 of 4 SMD Type Product specification BSS 83 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 0.12 0.18 Q gd - 1.1 1.65 Qg - 2.38 3.57 V(plateau) - -2.94 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -0.33 A Gate to drain charge VDD = -48 , ID = -0.33 A Gate charge total VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -0.33 A Parameter Symbol Values Unit min. typ. max. IS - - -0.33 ISM - - -1.32 VSD - -0.84 -1.1 V trr - 59.4 89 ns Qrr - 37.5 56 nC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -0.33 Reverse recovery time VR = -30 V, IF=I S , di F/dt = 80 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 80 A/µs http://www.twtysemi.com [email protected] 4008-318-123 4 of 4