Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm Parameter Collector-base voltage (Emitter open) Symbol Rating Unit VCBO −40 V 2SB0947 −50 2SB0947A Collector-emitter voltage 2SB0947 (Base open) 2SB0947A −20 VCEO V 4.2±0.2 7.5±0.2 16.7±0.3 2.7±0.2 φ 3.1±0.1 1.4±0.1 0.8±0.1 2.54±0.3 5.08±0.5 VEBO −5 V IC −10 A Peak collector current ICP −15 A Collector power PC 35 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C dissipation 4.2±0.2 5.5±0.2 −40 Collector current Emitter-base voltage (Collector open) 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 10.0±0.2 Solder Dip (4.0) • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 ■ Features 1.3±0.2 0.5+0.2 –0.1 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SB0947 Collector-base cutoff current (Emitter open) 2SB0947 Conditions IC = −10 mA, IB = 0 VCEO Min Typ Max −20 Unit V −40 2SB0947A ICBO 2SB0947A VCB = −40 V, IE = 0 −50 VCB = −50 V, IE = 0 −50 Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 Forward current transfer ratio hFE1 VCE = −2 V, IC = − 0.1 A 45 VCE = −2 V, IC = −2 A 60 hFE2 * Collector-emitter saturation voltage VCE(sat) IC = −7 A, IB = − 0.23 A Base-emitter saturation voltage VBE(sat) IC = −7 A, IB = − 0.23 A −50 µA µA 260 − 0.6 −1.5 V V VCE = −10 V, IC = − 0.5 A, f = 10 MHz 150 MHz Cob VCB = −10 V, IE = 0, f = 1 MHz 200 pF Turn-on time ton IC = −2 A, IB1 = −66 mA, IB2 = 66 mA 0.1 µs Storage time tstg VCC = −20 V 0.5 µs Fall time tf 0.1 µs Transition frequency fT Collector output capacitance (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00026BED 1 2SB0947, 2SB0947A IC VCE 30 (1) 20 10 (3) IB=–160mA −10 –100mA −8 –80mA −6 –60mA –40mA −4 –30mA –20mA −2 (2) –10mA (4) 40 80 120 0 160 −2 0 Ambient temperature Ta (°C) −4 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 100˚C 25˚C − 0.1 −1 102 Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob 102 10 1 − 0.01 −100 103 102 10 −100 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C tstg ton 0.1 tf −2 −4 Non repetitive pulse TC=25˚C −10 IC t=10ms t=1ms DC −1 − 0.1 −6 Collector current IC (A) SJD00026BED −10 ICP 1 0 −1 Safe operation area −100 10 0.01 − 0.1 Collector current IC (A) ton, tstg, tf IC Collector-base voltage VCB (V) 2 −10 103 Collector current IC (A) f=1MHz TC=25˚C −10 VCE=–10V f=10MHz TC=25˚C 10 Cob VCB −10 fT I C –25˚C −1 −1 Collector current IC (A) 104 25˚C TC=100˚C 1 − 0.1 −10 104 −1 –25˚C − 0.01 − 0.1 VCE=–2V 103 Collector current IC (A) 1 − 0.1 −12 25˚C hFE IC TC=–25˚C − 0.01 − 0.1 −10 104 IC/IB=30 −1 −8 TC=100˚C Collector-emitter voltage VCE (V) VBE(sat) IC −10 −6 Transition frequency fT (MHz) 0 −1 − 0.1 Collector current IC (A) 0 IC/IB=30 −8 − 0.01 − 0.1 −1 −10 2SB0947A 40 TC=25˚C −10 2SB0947 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC −12 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 50 −100 Collector-emitter voltage VCE (V) 2SB0947, 2SB0947A Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00026BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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