Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 5 A Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 150 ˚C –55 to +155 ˚C (TC=25˚C) Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 3V, IC = 0 hFE1 VCE = 5V, IC = 20mA 20 hFE2* VCE = 5V, IC = 1A 60 hFE3 VCE = 5V, IC = 3A 20 Forward current transfer ratio 2.7±0.2 4.0 ● 14.0±0.5 ● Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 typ VCB = 100V, IE = 0 max Unit 50 µA 50 µA 200 Base to emitter voltage VBE VCE = 5V, IC = 3A 1.8 V Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.3A 2.0 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, f = 1MHz 90 pF *h FE2 Rank classification Rank Q P hFE2 60 to 120 100 to 200 1 Power Transistors 2SD1499 PC — Ta IC — VCE IC — VBE 10 50 (1) 40 VCE=5V 7 30 20 25˚C 8 Collector current IC (A) 60 8 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 Collector current IC (A) Collector power dissipation PC (W) 80 IB=100mA 6 80mA 60mA 4 40mA 20mA 2 (2) 10 6 –25˚C TC=100˚C 5 4 3 2 1 10mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 6 8 0 3000 Transition frequency fT (MHz) 1 25˚C TC=100˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 TC=100˚C 300 100 –25˚C 30 10 3 0.1 0.3 1 10 ICP t=1ms 3 10ms 1 DC 0.3 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) VCE=5V f=1MHz TC=25˚C 300 100 30 10 3 1 0.1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C IC 3 Collector current IC (A) 102 2.0 0.3 1 0.01 0.03 10 25˚C Area of safe operation (ASO) 30 1.6 fT — IC 1000 3 1.2 VCE=5V Forward current transfer ratio hFE 10 0.8 1000 IC/IB=10 30 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 12 10000 100 Collector current IC (A) 2 10 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 10 (2) 1 10–1 10–2 10–3 10–2 10–1 1 10 Time t (s) 102 103 104 10