Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm Parameter Symbol Collector to 2SD1772 base voltage 2SD1772A Collector to 2SD1772 Ratings 200 VCBO 200 150 VCEO emitter voltage 2SD1772A 180 Unit V Peak collector current ICP 2 A Collector current IC 1 A 25 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 4.2±0.2 7.5±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 6 Ta=25°C 1.4±0.1 1 V VEBO dissipation φ3.1±0.1 V Emitter to base voltage Collector power TC=25°C 16.7±0.3 0.7±0.1 (TC=25˚C) 2.7±0.2 4.0 ■ Absolute Maximum Ratings 14.0±0.5 ● Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 50 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 50 µA VCEO IC = 5mA, IB = 0 VEBO IE = 0.5mA, IC = 0 6 hFE1* VCE = 10V, IC = 100mA 60 50 Collector to emitter 2SD1772 voltage 2SD1772A Emitter to base voltage Forward current transfer ratio 150 V 180 V 240 hFE2 VCE = 10V, IC = 300mA Base to emitter voltage VBE VCE = 10V, IC = 300mA Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA Transition frequency fT VCE = 10V, IC = 100mA, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 27 pF *h FE1 1 1 V V Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD1772, 2SD1772A PC — Ta IC — VCE IB=20mA (1) 25 20 15 (2) 10 1.2 1.0 10mA 8mA 0.8 6mA 0.6 4mA 0.4 5 0.2 25˚C TC=100˚C 2 –25˚C 1 1mA (3) 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 8 12 16 20 24 0 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) hFE — IC fT — IC 1000 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.03 0.1 0.3 1 Area of safe operation (ASO) t=0.5ms 1ms 0.3 10ms DC 0.1 0.03 0.003 0.001 1 3 10 30 100 2SD1772A 2SD1772 0.01 300 Collector to emitter voltage VCE 1000 (V) Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C IC 30 10 3 1 0.1 0.01 0.03 3 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t 102 1 100 Collector current IC (A) 10 3 ICP 300 0.3 1 0.01 3 Transition frequency fT (MHz) 3 VCE=10V f=1MHz TC=25˚C VCE=10V 1000 Forward current transfer ratio hFE IC/IB=10 10 Collector current IC (A) Collector current IC (A) 3 2mA 0 2 VCE=10V 1.4 Collector current IC (A) 30 4 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W) 35 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.6 Collector current IC (A) Collector power dissipation PC (W) 40 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10