Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB940 and 2SB940A Unit: mm ■ Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to 2SD1264 150 VCEO emitter voltage 2SD1264A 180 6 V Peak collector current ICP 3 A Collector current IC 2 A dissipation PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 150 ˚C –55 to +150 ˚C Symbol Conditions IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 50µA, IE = 0 VCEO IC = 5mA, IB = 0 2SD1264A Emitter to base voltage Forward current transfer ratio 4.2±0.2 7.5±0.2 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) min typ 6 60 50 VCE = 10V, IC = 400mA Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz µA 50 µA V V 180 IE = 500µA, IC = 0 VCE = 10V, IC = 400mA Unit 50 150 VCE = 10V, IC = 150mA VBE max 200 hFE1* hFE2 FE1 1 VEBO Base to emitter voltage *h 2.54±0.25 VCB = 200V, IE = 0 Emitter cutoff current 2SD1264 0.5 +0.2 –0.1 (TC=25˚C) ICBO voltage 0.8±0.1 1.3±0.2 W 2 Collector cutoff current Collector to emitter 1.4±0.1 5.08±0.5 VEBO 30 φ3.1±0.1 V Emitter to base voltage Collector power TC=25°C 16.7±0.3 0.7±0.1 (TC=25˚C) 2.7±0.2 4.0 ● 14.0±0.5 ● High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 V 240 1 1 20 V V MHz Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD1264, 2SD1264A PC — Ta IC — VCE (1) 30 1.0 20 (2) 10 IB=7mA 0.8 5mA 4mA 0.6 3mA 0.4 2mA 0.2 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 4 8 12 16 20 TC=100˚C 25˚C –25˚C 0.1 0.03 0.03 0.1 0.3 300 TC=100˚C 100 –25˚C 30 10 3 1ms 0.3 DC 0.1 0.03 0.003 0.001 1 3 10 30 100 2SD1264A 0.01 300 Collector to emitter voltage VCE 1000 100 30 10 3 1 0.1 0.3 1 3 0.1 0.01 0.03 10 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 1.2 0.3 103 Thermal resistance Rth(t) (˚C/W) 5ms 1.0 VCE=5V f=1MHz TC=25˚C 300 Collector current IC (A) t=0.5ms 0.8 fT — IC 25˚C 1 0.01 0.03 1 2SD1264 Collector current IC (A) IC 1 0.6 VCE=10V Non repetitive pulse TC=25˚C ICP 3 0.4 1000 Area of safe operation (ASO) 10 0.2 Base to emitter voltage VBE (V) 3000 Collector current IC (A) 2 0 1000 0.01 0.01 0.4 24 10000 Forward current transfer ratio hFE 3 0.3 0.6 hFE — IC IC/IB=10 1 0.8 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Transition frequency fT (MHz) 0 TC=100˚C 0.2 1mA (3) (4) 25˚C 1.0 6mA Collector current IC (A) 40 1.2 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10