INFINEON BSP280

IGBT Transistor
BSP 280
Preliminary Data
●
●
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●
●
●
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VCE 1000 V
I C 2.5 A
N channel
MOS input (voltage-controlled)
High switch speed
Very low tail current
Latch-up free
Suitable freewheeling diode BAX 280
Type
Ordering Code Tape and Reel
Information
BSP 280 Q67000-S279
Pin Configuration
E6327: 1000 pcs/reel
1
2
3
4
G
C
E
C
Marking
Package
BSP 280
SOT-223
Maximum Ratings
Parameter
Symbol
Continuous collector current
TS = 25 ˚C
Soldering point,
TS = 80 ˚C
IC
Unit
A
2.5
1.5
Continuous collector current ambient, TA = 80 ˚C IC
Pulsed collector current
Soldering point,
Values
0.5
IC puls
TS = 80 ˚C
3.0
Collector-emitter voltage
VCE
1000
Gate-emitter voltage
VGE
± 20
Power dissipation
Soldering point,
Ambient
Ptot
TS = 80 ˚C
TA = 25 ˚C
V
W
10
1.8
Operating and storage temperature range
Tj, Tstg
– 40 … + 150
˚C
Thermal resistance
RthJA
RthJS
70
6
K/W
DIN humidity category, DIN 40 040
–
E
–
IEC climatic category, DIN IEC 68-1
–
40/150/56
1)
chip-ambient
chip-soldering point
IGBT = Insulated Gate Bipolar Transistor
1)
Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
BSP 280
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Collector-emitter breakdown voltage
VGE = 0, IC = 0.1 mA
V(BR)CES
Gate threshold voltage
VGE = VCE, IC = 0.1 mA
VGE(th)
Collector-emitter saturation voltage
VCE(sat)
V
1000
–
–
4.5
5.5
6.5
VGE = 15 V, IC = 0.5 A
Tj = 25 ˚C
Tj = 125 ˚C
Tj = 150 ˚C
–
–
–
1.8
2.1
2.2
–
–
3.0
VGE = 15 V, IC = 1.5 A
Tj = 25 ˚C
Tj = 125 ˚C
Tj = 150 ˚C
–
–
–
2.8
3.8
4.0
3.3
4.3
4.5
Zero gate voltage collector current
VCE = 1000 V, VGE = 0
Tj = 25 ˚C
Tj = 125 ˚C
ICES
Gate-emitter leakage current
VGE = 20 V, VCE = 0
IGES
µA
–
–
1
–
25
100
nA
–
0.1
100
–
0.6
–
–
225
–
–
25
–
–
13
–
Dynamic Characteristics
Forward transconductance
gfs
VCE = 20 V, IC = 1.5 A
Input capacitance
Ciss
VCE = 0, VGE = 25 V, f = 1 MHz
Output capacitance
pF
Coss
VCE = 0, VGE = 25 V, f = 1 MHz
Reverse transfer capacitance
S
Crss
VCE = 0, VGE = 25 V, f = 1 MHz
td(on)
Turn-on delay time
VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A
–
20
–
Rise time
tr
VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A
–
15
–
ns
BSP 280
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Eon
Turn-on losses
VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A
Turn-off delay time
VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A
Fall time
VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A
SOT-223
Dimensions in mm
Unit
min.
typ.
max.
–
0.3
–
–
120
–
–
20
–
mWs
td(off)
ns
tf
Eoff
Total turn-off losses
VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A
Package Outline
Values
mWs
–
0.2
–
BSP 280
Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Typ. output characteristics IC = f (VCE)
parameter: tp = 80 µs
Typ. transfer characteristics IC = f (VGE)
parameter: tp = 80 µs, VCE= 20 V
Typ. capacitances C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
Typ. saturation characteristics
VCE(sat) = f (VGE); parameter: Tj = 25 ˚C
BSP 280
Typ. saturation characteristic
VCE(sat) = f (VGE); parameter: Tj = 125 ˚C
Typ. gate charge VGE = f (QGate)
parameter: IC plus = 1 A