IGBT Transistor BSP 280 Preliminary Data ● ● ● ● ● ● ● ● VCE 1000 V I C 2.5 A N channel MOS input (voltage-controlled) High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel Information BSP 280 Q67000-S279 Pin Configuration E6327: 1000 pcs/reel 1 2 3 4 G C E C Marking Package BSP 280 SOT-223 Maximum Ratings Parameter Symbol Continuous collector current TS = 25 ˚C Soldering point, TS = 80 ˚C IC Unit A 2.5 1.5 Continuous collector current ambient, TA = 80 ˚C IC Pulsed collector current Soldering point, Values 0.5 IC puls TS = 80 ˚C 3.0 Collector-emitter voltage VCE 1000 Gate-emitter voltage VGE ± 20 Power dissipation Soldering point, Ambient Ptot TS = 80 ˚C TA = 25 ˚C V W 10 1.8 Operating and storage temperature range Tj, Tstg – 40 … + 150 ˚C Thermal resistance RthJA RthJS 70 6 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 40/150/56 1) chip-ambient chip-soldering point IGBT = Insulated Gate Bipolar Transistor 1) Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. BSP 280 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Collector-emitter breakdown voltage VGE = 0, IC = 0.1 mA V(BR)CES Gate threshold voltage VGE = VCE, IC = 0.1 mA VGE(th) Collector-emitter saturation voltage VCE(sat) V 1000 – – 4.5 5.5 6.5 VGE = 15 V, IC = 0.5 A Tj = 25 ˚C Tj = 125 ˚C Tj = 150 ˚C – – – 1.8 2.1 2.2 – – 3.0 VGE = 15 V, IC = 1.5 A Tj = 25 ˚C Tj = 125 ˚C Tj = 150 ˚C – – – 2.8 3.8 4.0 3.3 4.3 4.5 Zero gate voltage collector current VCE = 1000 V, VGE = 0 Tj = 25 ˚C Tj = 125 ˚C ICES Gate-emitter leakage current VGE = 20 V, VCE = 0 IGES µA – – 1 – 25 100 nA – 0.1 100 – 0.6 – – 225 – – 25 – – 13 – Dynamic Characteristics Forward transconductance gfs VCE = 20 V, IC = 1.5 A Input capacitance Ciss VCE = 0, VGE = 25 V, f = 1 MHz Output capacitance pF Coss VCE = 0, VGE = 25 V, f = 1 MHz Reverse transfer capacitance S Crss VCE = 0, VGE = 25 V, f = 1 MHz td(on) Turn-on delay time VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A – 20 – Rise time tr VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A – 15 – ns BSP 280 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Eon Turn-on losses VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A Turn-off delay time VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A Fall time VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A SOT-223 Dimensions in mm Unit min. typ. max. – 0.3 – – 120 – – 20 – mWs td(off) ns tf Eoff Total turn-off losses VCC = 600 V, VGE = 15 V, RG(off) = 25 Ω, IC = 1.5 A Package Outline Values mWs – 0.2 – BSP 280 Characteristics at Tj = 25 ˚C, unless otherwise specified. Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE= 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz Typ. saturation characteristics VCE(sat) = f (VGE); parameter: Tj = 25 ˚C BSP 280 Typ. saturation characteristic VCE(sat) = f (VGE); parameter: Tj = 125 ˚C Typ. gate charge VGE = f (QGate) parameter: IC plus = 1 A