Previous Datasheet Index Next Data Sheet PD - 5.026 CPV362MF Fast IGBT IGBT SIP MODULE 1 Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve 3 D1 Q1 9 D3 Q3 15 4 6 D2 Q2 Product Summary 12 D5 Q5 10 D4 Q4 7 18 16 D6 Q6 13 19 Output Current in a Typical 5.0 kHz Motor Drive 4.6 ARMS per phase (1.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 8.8 4.8 26 26 3.4 26 ±20 2500 23 9.1 -40 to +150 V A V VRMS W °C 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55-0.8 N•m) Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module C-141 To Order Typ. Max. — — 0.1 20 (0.7) 5.5 9.0 — — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet CPV362MF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Temperature Coeff. of Breakdown Voltage — 0.72 Collector-to-Emitter Saturation Voltage — 1.6 — 2.0 — 1.7 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -11 Forward Transconductance 2.9 5.0 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.4 — 1.3 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 1.8 IC = 4.8A VGE = 15V — V IC = 8.8A See Fig. 2, 5 — IC = 4.8A, T J = 150°C 5.5 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 9.0A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, T J = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, T J = 150°C ±500 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time — Diode Peak Reverse Recovery Current — Diode Reverse Recovery Charge — Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — 55 — 4.5 — 124 — — Typ. 16 2.4 7.6 24 13 160 310 0.22 0.40 0.62 25 18 210 600 1.07 340 63 5.9 37 90 3.5 8.0 65 360 240 210 Max. Units Conditions 21 IC = 9.0A 3.4 nC VCC = 400V 10 See Fig. 8 — TJ = 25°C — ns IC = 9.0A, V CC = 480V 270 VGE = 15V, R G = 50Ω 600 Energy losses include "tail" and — diode reverse recovery — mJ See Fig. 9, 10, 11, 18 1.04 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 9.0A, V CC = 480V — VGE = 15V, R G = 50Ω — Energy losses include "tail" and — mJ diode reverse recovery — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. TJ = 125°C 14 IF = 8.0A 50 A TJ = 25°C See Fig. TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-142 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet 8 2.5 6 1.9 4 1.2 TC = 90°C TJ = 125°C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage 2 0.6 Total O utpu t P ow e r (kW ) Lo ad C urrent (A ) CPV362MF 0 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave 100 TJ = 25 °C I C , C ollector-to-E mitter C urrent (A ) I C , C ollector-to-E mitte r C urren t (A ) 100 TJ = 25 °C TJ = 1 50 °C 10 1 TJ = 1 50 °C 10 V G E = 15 V 2 0 µs P U L S E W ID TH 0.1 0.1 1 V C C = 1 00 V 5 µs P UL S E W ID TH 1 10 5 10 15 V G E , G ate-to-E m itter V olta g e (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-143 To Order 20 S Previous Datasheet Index Next Data Sheet CPV362MF 4.0 V G E = 15 V VC E , C o lle ctor-to-E m itter V oltage (V ) Ma xim um D C C ollecto r C urren t (A ) 16 12 8 4 VG E = 1 5 V 80 µs P UL S E W ID TH I C = 18 A 3.5 3.0 2.5 I C = 9.0 A 2.0 I C = 4.5A 1.5 1.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 1 00 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T h e rm a l R e sp o n s e (Z thJC ) 10 D = 0 .5 0 0 .2 0 1 0 .1 0 0 .0 5 0 .0 2 0 .0 1 PD M 0.1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t2 N o te s : 1 . D u ty fa c to r D = t 0.01 0.000 01 1 1 /t 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R e c ta n g u lar P u ls e D u ra tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-144 To Order 10 Previous Datasheet Index Next Data Sheet CPV362MF 700 500 Cies 400 Coes V G E , G ate-to-E m itter V oltage (V ) 600 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 12 300 200 V C E = 4 00 V I C = 9.0A Cres 100 8 4 0 0 1 10 0 100 4 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 1 .3 4 12 16 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 48 0 V = 15 V = 25 °C = 9.0A To ta l S w itc hing Lo sse s (m J) Total S w itching Lo sse s (m J) 1 .3 6 8 Q g , Total G ate C harge (nC ) 1 .3 2 1 .3 0 1 .2 8 R G = 50 Ω V GE = 15 V V CC = 48 0 V I C = 1 8A I C = 9.0A 1 I C = 4.5 A 1 .2 6 0.1 1 .2 4 20 30 40 50 -60 60 R G , G ate R esistance (Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem peratu re (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-145 To Order Previous Datasheet Index Next Data Sheet CPV362MF 100 = 50 Ω = 150 °C = 4 80 V = 15 V I C , C o lle c to r-to -E m itte r C u rre n t (A ) RG TC V CC VGE 3.0 2.0 1.0 VGGE E= 20 V T J = 125 °C S A FE O P E RA TING A RE A 10 1 0.0 4 8 12 16 1 20 10 100 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , C o llector-to -E m itte r Current (A ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Sw itching Losses (m J ) 4.0 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-146 To Order 1000 Previous Datasheet Index Next Data Sheet CPV362MF 100 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 60 I IRRM - (A) t rr - (ns) IF = 16A IF = 8.0A IF = 16A 10 IF = 8.0A 40 I F = 4.0A IF = 4.0A 20 0 100 1 100 1000 di f /dt - (A/µs) 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 10000 500 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 400 300 I F = 16A 200 I F = 8.0A IF = 4.0A 1000 IF = 8.0A IF = 16A 100 IF = 4.0A 0 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt 100 100 1000 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-147 To Order Previous Datasheet Index Next Data Sheet CPV362MF Same type device as D.U.T. 90% Vge +Vge Vce 430µF 80% of Vce D.U.T. 90% Ic 10% Vce Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of Eoff = ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr t3 ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 (13-pin) Section D - page D-14 C-148 To Order