IRF CPV362MF

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PD - 5.026
CPV362MF
Fast IGBT
IGBT SIP MODULE
1
Features
•
•
•
•
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
TM
HEXFRED soft ultrafast diodes
Optimized for medium operating frequency (1 to 10kHz)
See Fig. 1 for Current vs. Frequency curve
3
D1
Q1
9
D3
Q3
15
4
6
D2
Q2
Product Summary
12
D5
Q5
10
D4
Q4
7
18
16
D6
Q6
13
19
Output Current in a Typical 5.0 kHz Motor Drive
4.6 ARMS per phase (1.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
8.8
4.8
26
26
3.4
26
±20
2500
23
9.1
-40 to +150
V
A
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
C-141
To Order
Typ.
Max.
—
—
0.1
20 (0.7)
5.5
9.0
—
—
Units
°C/W
g (oz)
Revision 1
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CPV362MF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Temperature Coeff. of Breakdown Voltage — 0.72
Collector-to-Emitter Saturation Voltage
—
1.6
—
2.0
—
1.7
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-11
Forward Transconductance
2.9 5.0
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
1.4
—
1.3
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
— V/°C VGE = 0V, IC = 1.0mA
1.8
IC = 4.8A
VGE = 15V
—
V
IC = 8.8A
See Fig. 2, 5
—
IC = 4.8A, T J = 150°C
5.5
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 9.0A
250
µA
VGE = 0V, VCE = 600V
1700
VGE = 0V, VCE = 600V, T J = 150°C
1.7
V
IC = 8.0A
See Fig. 13
1.6
IC = 8.0A, T J = 150°C
±500 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
Diode Peak Reverse Recovery Current
—
Diode Reverse Recovery Charge
—
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
55
—
4.5
—
124
—
—
Typ.
16
2.4
7.6
24
13
160
310
0.22
0.40
0.62
25
18
210
600
1.07
340
63
5.9
37
90
3.5
8.0
65
360
240
210
Max. Units
Conditions
21
IC = 9.0A
3.4
nC VCC = 400V
10
See Fig. 8
—
TJ = 25°C
—
ns
IC = 9.0A, V CC = 480V
270
VGE = 15V, R G = 50Ω
600
Energy losses include "tail" and
—
diode reverse recovery
—
mJ See Fig. 9, 10, 11, 18
1.04
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
ns
IC = 9.0A, V CC = 480V
—
VGE = 15V, R G = 50Ω
—
Energy losses include "tail" and
—
mJ diode reverse recovery
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
55
ns
TJ = 25°C
See Fig.
TJ = 125°C
14
IF = 8.0A
50
A
TJ = 25°C
See Fig.
TJ = 125°C
15
VR = 200V
138
nC TJ = 25°C
See Fig.
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C
See Fig.
—
TJ = 125°C
17
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-142
To Order
Pulse width 5.0µs,
single shot.
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8
2.5
6
1.9
4
1.2
TC = 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VC C = 60% of Rated Voltage
2
0.6
Total O utpu t P ow e r (kW )
Lo ad C urrent (A )
CPV362MF
0
0
0.1
1
10
100
f, F re quency (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
TJ = 25 °C
I C , C ollector-to-E mitter C urrent (A )
I C , C ollector-to-E mitte r C urren t (A )
100
TJ = 25 °C
TJ = 1 50 °C
10
1
TJ = 1 50 °C
10
V G E = 15 V
2 0 µs P U L S E W ID TH
0.1
0.1
1
V C C = 1 00 V
5 µs P UL S E W ID TH
1
10
5
10
15
V G E , G ate-to-E m itter V olta g e (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-143
To Order
20
S
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CPV362MF
4.0
V G E = 15 V
VC E , C o lle ctor-to-E m itter V oltage (V )
Ma xim um D C C ollecto r C urren t (A )
16
12
8
4
VG E = 1 5 V
80 µs P UL S E W ID TH
I C = 18 A
3.5
3.0
2.5
I C = 9.0 A
2.0
I C = 4.5A
1.5
1.0
0
25
50
75
100
125
-60
150
T C , C ase Tem perature (°C )
-40
-20
0
20
40
60
80
1 00 120 140 160
TC , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T h e rm a l R e sp o n s e (Z thJC )
10
D = 0 .5 0
0 .2 0
1
0 .1 0
0 .0 5
0 .0 2
0 .0 1
PD M
0.1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.000 01
1
1
/t
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n g u lar P u ls e D u ra tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-144
To Order
10
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CPV362MF
700
500
Cies
400
Coes
V G E , G ate-to-E m itter V oltage (V )
600
C, C apacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
12
300
200
V C E = 4 00 V
I C = 9.0A
Cres
100
8
4
0
0
1
10
0
100
4
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VC C
VG E
TC
IC
1 .3 4
12
16
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 48 0 V
= 15 V
= 25 °C
= 9.0A
To ta l S w itc hing Lo sse s (m J)
Total S w itching Lo sse s (m J)
1 .3 6
8
Q g , Total G ate C harge (nC )
1 .3 2
1 .3 0
1 .2 8
R G = 50 Ω
V GE = 15 V
V CC = 48 0 V
I C = 1 8A
I C = 9.0A
1
I C = 4.5 A
1 .2 6
0.1
1 .2 4
20
30
40
50
-60
60
R G , G ate R esistance (Ω )
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem peratu re (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-145
To Order
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CPV362MF
100
= 50 Ω
= 150 °C
= 4 80 V
= 15 V
I C , C o lle c to r-to -E m itte r C u rre n t (A )
RG
TC
V CC
VGE
3.0
2.0
1.0
VGGE E= 20 V
T J = 125 °C
S A FE O P E RA TING A RE A
10
1
0.0
4
8
12
16
1
20
10
100
V C E , C o lle cto r-to-E m itte r V olta g e (V )
I C , C o llector-to -E m itte r Current (A )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Sw itching Losses (m J )
4.0
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-146
To Order
1000
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CPV362MF
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
I IRRM - (A)
t rr - (ns)
IF = 16A
IF = 8.0A
IF = 16A
10
IF = 8.0A
40
I F = 4.0A
IF = 4.0A
20
0
100
1
100
1000
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
10000
500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
400
300
I F = 16A
200
I F = 8.0A
IF = 4.0A
1000
IF = 8.0A
IF = 16A
100
IF = 4.0A
0
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
100
100
1000
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-147
To Order
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CPV362MF
Same type
device as
D.U.T.
90% Vge
+Vge
Vce
430µF
80%
of Vce
D.U.T.
90% Ic
10% Vce
Ic
Ic
5% Ic
td(off)
tf
Fig. 18a - Test Circuit for Measurement of
Eoff =
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
∫
t1+5µS
Vce ic dt
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
t3
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 5 - IMS-2 (13-pin)
Section D - page D-14
C-148
To Order