Previous Datasheet Index Next Data Sheet PD - 9.1144 IRGPC20MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.5V G @VGE = 15V, IC = 8.0A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 13 8.0 26 26 7.0 60 10 ± 20 60 24 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-381 To Order Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 2.1 3.5 — 40 — Units °C/W g (oz) Revision 2 Previous Datasheet Index Next Data Sheet IRGPC20MD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.42 — V/°C VGE = 0V, IC = 1.0mA — 2.0 2.5 IC = 8.0A V GE = 15V — 2.7 — V IC = 13A See Fig. 2, 5 — 2.5 — IC = 8.0A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 2.7 3.8 — S VCE = 100V, I C = 8.0A — — 250 µA VGE = 0V, V CE = 600V — — 1700 VGE = 0V, V CE = 600V, T J = 150°C — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.4 1.7 IC = 8.0A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. Typ. Max. Units Conditions — 16 24 IC = 8.0A — 3.6 5.2 nC VCC = 400V — 6.0 9.0 See Fig. 8 — 66 — TJ = 25°C — 40 — ns IC = 8.0A, V CC = 480V — 330 540 VGE = 15V, R G = 50Ω — 260 480 Energy losses include "tail" and — 0.5 — diode reverse recovery. — 1.0 — mJ See Fig. 9, 10, 11, 18 — 1.5 2.5 10 — — µs VCC = 360V, T J = 125°C VGE = 15V, R G = 50Ω, VCPK < 500V — 65 — TJ = 150°C, See Fig. 9, 10, 11, 18 — 46 — ns IC = 8.0A, V CC = 480V — 520 — VGE = 15V, R G = 50Ω — 560 — Energy losses include "tail" and — 2.3 — mJ diode reverse recovery. — 13 — nH Measured 5mm from package — 365 — VGE = 0V — 47 — pF VCC = 30V See Fig. 7 — 4.8 — ƒ = 1.0MHz — 37 55 ns TJ = 25°C See Fig. — 55 90 TJ = 125°C 14 I F = 8.0A — 3.5 5.0 A TJ = 25°C See Fig. — 4.5 8.0 TJ = 125°C 15 V R = 200V — 65 138 nC TJ = 25°C See Fig. — 124 360 TJ = 125°C 16 di/dt = 200A/µs — 240 — A/µs TJ = 25°C See Fig. — 210 — TJ = 125°C 17 VCC=80%(V CES), VGE=20V, L=10µH, R G= 50Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-382 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPC20MD2 10 D u ty cycle : 5 0 % TJ = 12 5°C T s in k = 9 0 °C G a te drive a s sp ec ifie d Turn -o n losse s inclu de e ffec ts of re ve rse re co ve ry Po we r D is sipation = 1 5W Load Current (A) 8 6 6 0 % o f ra te d v o lta g e 4 2 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 100 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 100 TJ = 25°C TJ = 150°C 10 VGE = 15V 20µs PULSE WIDTH A 1 1 TJ = 150°C 10 TJ = 25°C VCC = 100V 5µs PULSE WIDTH A 1 10 5 VCE , Collector-to-Emitter Voltage (V) 10 15 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-383 To Order 20 Previous Datasheet Index Next Data Sheet IRGPC20MD2 5.0 VGE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 14 12 10 8 6 4 2 A 0 25 50 75 100 125 VGE = 15V 80µs PULSE WIDTH 4.0 I C = 16A 3.0 I C = 8.0A 2.0 IC = 4.0A 1.0 A 0.0 -60 150 TC , Case Temperature (°C) -40 -20 0 20 40 60 80 100 120 140 160 TC, Case Temperature (°C) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z thJ C ) 10 1 D = 0.50 0 .2 0 0 .10 PD M 0.0 5 0.1 0.0 2 0 .01 t SIN G LE P U LS E (TH ER M AL R E SP O N SE ) t2 N o te s : 1 . D u ty fa c to r D = t 0.01 0.00001 1 1 / t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-384 To Order 10 Previous Datasheet Index Next Data Sheet IRGPC20MD2 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 600 Cies 400 Coes 200 Cres 16 12 A 0 1 10 VCE = 400V I C = 8.0A 8 4 A 0 0 100 4 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 16 10 = 480V = 15V = 25°C = 8.0A 1.62 1.60 1.58 1.56 RG = 50Ω V GE = 15V V CC = 480V I C = 16A I C = 8.0A I C = 4.0A 1 A 0.1 0 10 20 30 40 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TC IC 12 Qg , Total Gate Charge (nC) VCE, Collector-to-Emitter Voltage (V) 1.64 8 50 60 R G , Gate Resistance (Ω) -60 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) W Fig. 9 - Typical Switching Losses vs. Gate Resistance -40 Fig. 10 - Typical Switching Losses vs. Case Temperature C-385 To Order Previous Datasheet Index Next Data Sheet IRGPC20MD2 100 = 50Ω = 150°C = 480V = 15V IC , Collector-to-Emitter Current (A) RG TC V CC V GE 4.0 2.0 0 4 8 12 16 VGE = 20V TJ = 125°C SAFE OPERATING AREA 10 A 0.0 A 1 1 20 10 100 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 6.0 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-386 To Order 1000 Previous Datasheet Index Next Data Sheet IRGPC20MD2 100 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 60 I IRRM - (A) t rr - (ns) IF = 16A I F = 8.0A I F = 16A 10 IF = 8.0A 40 I F = 4.0A I F = 4.0A 20 0 100 1 100 1000 di f /dt - (A/µs) 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 400 300 I F = 16A 200 I F = 8.0A IF = 4.0A 1000 IF = 8.0A I F = 16A 100 IF = 4.0A 0 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt 100 100 di f /dt - (A/µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-387 To Order 1000 Previous Datasheet Index Next Data Sheet IRGPC20MD2 90% Vge +Vge Same type device as D.U.T. Vce 430µF 80% of Vce Ic 90% Ic 10% Vce Ic D.U.T. 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ∫ t1+5µS Vce ic dt t1 ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr t3 ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-388 To Order Section D - page D-13