IRF IRGPC20MD2

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PD - 9.1144
IRGPC20MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
DIODE
Short Circuit Rated
Fast CoPack IGBT
Features
C
VCES = 600V
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCE(sat) ≤ 2.5V
G
@VGE = 15V, IC = 8.0A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
tsc
VGE
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
13
8.0
26
26
7.0
60
10
± 20
60
24
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-381
To Order
Min.
Typ.
Max.
—
—
—
—
—
—
—
0.24
—
6 (0.21)
2.1
3.5
—
40
—
Units
°C/W
g (oz)
Revision 2
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IRGPC20MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
— 0.42 —
V/°C VGE = 0V, IC = 1.0mA
—
2.0 2.5
IC = 8.0A
V GE = 15V
—
2.7
—
V
IC = 13A
See Fig. 2, 5
—
2.5
—
IC = 8.0A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
2.7
3.8
—
S
VCE = 100V, I C = 8.0A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 1700
VGE = 0V, V CE = 600V, T J = 150°C
—
1.4 1.7
V
IC = 8.0A
See Fig. 13
—
1.4 1.7
IC = 8.0A, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Min. Typ. Max. Units
Conditions
—
16
24
IC = 8.0A
—
3.6 5.2
nC
VCC = 400V
—
6.0 9.0
See Fig. 8
—
66
—
TJ = 25°C
—
40
—
ns
IC = 8.0A, V CC = 480V
—
330 540
VGE = 15V, R G = 50Ω
—
260 480
Energy losses include "tail" and
—
0.5
—
diode reverse recovery.
—
1.0
—
mJ
See Fig. 9, 10, 11, 18
—
1.5 2.5
10
—
—
µs
VCC = 360V, T J = 125°C
VGE = 15V, R G = 50Ω, VCPK < 500V
—
65
—
TJ = 150°C,
See Fig. 9, 10, 11, 18
—
46
—
ns
IC = 8.0A, V CC = 480V
—
520
—
VGE = 15V, R G = 50Ω
—
560
—
Energy losses include "tail" and
—
2.3
—
mJ
diode reverse recovery.
—
13
—
nH
Measured 5mm from package
—
365
—
VGE = 0V
—
47
—
pF
VCC = 30V
See Fig. 7
—
4.8
—
ƒ = 1.0MHz
—
37
55
ns
TJ = 25°C See Fig.
—
55
90
TJ = 125°C
14
I F = 8.0A
—
3.5 5.0
A
TJ = 25°C See Fig.
—
4.5 8.0
TJ = 125°C
15
V R = 200V
—
65
138
nC
TJ = 25°C See Fig.
—
124 360
TJ = 125°C
16
di/dt = 200A/µs
—
240
—
A/µs TJ = 25°C See Fig.
—
210
—
TJ = 125°C
17
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-382
To Order
Pulse width 5.0µs,
single shot.
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IRGPC20MD2
10
D u ty cycle : 5 0 %
TJ = 12 5°C
T s in k = 9 0 °C
G a te drive a s sp ec ifie d
Turn -o n losse s inclu de
e ffec ts of re ve rse re co ve ry
Po we r D is sipation = 1 5W
Load Current (A)
8
6
6 0 % o f ra te d
v o lta g e
4
2
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
100
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
TJ = 25°C
TJ = 150°C
10
VGE = 15V
20µs PULSE WIDTH A
1
1
TJ = 150°C
10
TJ = 25°C
VCC = 100V
5µs PULSE WIDTH A
1
10
5
VCE , Collector-to-Emitter Voltage (V)
10
15
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-383
To Order
20
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IRGPC20MD2
5.0
VGE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
14
12
10
8
6
4
2
A
0
25
50
75
100
125
VGE = 15V
80µs PULSE WIDTH
4.0
I C = 16A
3.0
I C = 8.0A
2.0
IC = 4.0A
1.0
A
0.0
-60
150
TC , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120 140 160
TC, Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herm al Response (Z thJ C )
10
1
D = 0.50
0 .2 0
0 .10
PD M
0.0 5
0.1
0.0 2
0 .01
t
SIN G LE P U LS E
(TH ER M AL R E SP O N SE )
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.00001
1
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-384
To Order
10
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IRGPC20MD2
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
600
Cies
400
Coes
200
Cres
16
12
A
0
1
10
VCE = 400V
I C = 8.0A
8
4
A
0
0
100
4
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
16
10
= 480V
= 15V
= 25°C
= 8.0A
1.62
1.60
1.58
1.56
RG = 50Ω
V GE = 15V
V CC = 480V
I C = 16A
I C = 8.0A
I C = 4.0A
1
A
0.1
0
10
20
30
40
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC
VGE
TC
IC
12
Qg , Total Gate Charge (nC)
VCE, Collector-to-Emitter Voltage (V)
1.64
8
50
60
R G , Gate Resistance (Ω)
-60
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
-40
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-385
To Order
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IRGPC20MD2
100
= 50Ω
= 150°C
= 480V
= 15V
IC , Collector-to-Emitter Current (A)
RG
TC
V CC
V GE
4.0
2.0
0
4
8
12
16
VGE = 20V
TJ = 125°C
SAFE OPERATING AREA
10
A
0.0
A
1
1
20
10
100
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantaneous Forward Current - I F (A)
Total Switching Losses (mJ)
6.0
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-386
To Order
1000
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IRGPC20MD2
100
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
I IRRM - (A)
t rr - (ns)
IF = 16A
I F = 8.0A
I F = 16A
10
IF = 8.0A
40
I F = 4.0A
I F = 4.0A
20
0
100
1
100
1000
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
400
300
I F = 16A
200
I F = 8.0A
IF = 4.0A
1000
IF = 8.0A
I F = 16A
100
IF = 4.0A
0
100
1000
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
100
100
di f /dt - (A/µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-387
To Order
1000
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IRGPC20MD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
430µF
80%
of Vce
Ic
90% Ic
10% Vce
Ic
D.U.T.
5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
∫
t1+5µS
Vce ic dt
t1
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
GATE VOLTAGE D.U.T.
10% +Vg
Qrr =
Ic
∫
trr
id dt
tx
+Vg
tx
10% Vcc
10% Irr
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
DIODE REVERSE
RECOVERY ENERGY
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
t3
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 3 - JEDEC Outline TO-247AC
C-388
To Order
Section D - page D-13