Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 2.9V G @VGE = 15V, I C = 23A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ T STG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 1200 42 23 84 84 16 84 10 ± 20 200 78 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-481 To Order Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 0.64 0.83 — 40 — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet IRGPH50MD2 Electrical Characteristics @ T J = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES /∆TJ Min. Typ. Max. Units Conditions 1200 — — V VGE = 0V, I C = 250µA — 1.1 — V/°C VGE = 0V, IC = 1.0mA — 2.3 2.9 IC = 23A V GE = 15V — 3.0 — V IC = 42A See Fig. 2, 5 — 2.8 — IC = 23A, T J = 150°C 3.0 — 5.5 VCE = V GE, IC = 250µA — -13 — mV/°C VCE = V GE, IC = 250µA 11 15 — S VCE = 100V, I C = 23A — — 250 µA VGE = 0V, V CE = 1200V — — 6500 VGE = 0V, V CE =1200V, T J = 150°C — 2.5 3.0 V IC = 16A See Fig. 13 — 2.1 2.5 IC = 16A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ T J = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Charge Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — 10 Typ. 89 22 26 100 140 510 470 3.0 8.0 11 — Max. Units Conditions 130 IC = 23A 33 nC VCC = 400V 39 See Fig. 8 — T J = 25°C — ns IC = 23A, V CC = 960V 770 VGE = 15V, R G = 5.0Ω 730 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 17 — µs VCC = 720V, T J = 125°C VGE = 15V, R G = 5.0Ω — 86 — T J = 150°C, See Fig. 9, 10, 11, 18 — 130 — ns IC = 23A, V CC = 960V — 800 — VGE = 15V, R G = 5.0Ω — 920 — Energy losses include "tail" and — 20 — mJ diode reverse recovery — 13 — nH Measured 5mm from package — 1900 — VGE = 0V — 140 — pF VCC = 30V See Fig. 7 — 24 — ƒ = 1.0MHz — 90 135 ns T J = 25°C See Fig. — 164 245 T J = 125°C 14 I F = 16A — 5.8 10 A T J = 25°C See Fig. — 8.3 15 T J = 125°C 15 V R = 200V — 260 675 nC T J = 25°C See Fig. — 680 1838 T J = 125°C 16 di/dt = 200A/µs — 120 — A/µs T J = 25°C See Fig. — 76 — T J = 125°C 17 Pulse width 5.0µs, VCC=80%(V CES), V GE=20V, L=10µH, single shot. R G= 5.0Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-482 To Order Previous Datasheet Index Next Data Sheet IRGPH50MD2 25 D u ty c y cle : 5 0 % T J = 1 25 °C T s ink = 90 °C G a te drive as sp e c ifie d T u rn-o n los s es in c lu de e ffe c ts of re v ers e re co ve ry P o we r Dissip atio n = 4 0W Loa d C u rren t (A ) 20 15 60% of rated v oltage 10 5 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 1000 IC , C ollector-to-E m itter Cu rrent (A ) I C , C ollector-to-E m itter C urre nt (A) 1000 25 °C 100 1 50 °C 10 100 1 5 0°C 2 5°C 10 V GE = 15 V 20 µ s P U L S E W ID T H 1 1 V C C = 1 0 0V 5 µ s P U L S E W ID TH 1 5 10 10 15 V G E , G a te-to-E m itter V oltage (V) V C E , C ollector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-483 To Order 20 Previous Datasheet Index Next Data Sheet IRGPH50MD2 6.0 V GE = 1 5V V C E , C ollec tor-to-E m itter V oltage (V ) M a xim um D C C ollector Current (A ) 50 40 30 20 10 5.5 V G E = 1 5V 8 0 µs P U L S E W ID TH 5.0 I C = 4 6A 4.5 4.0 3.5 I C = 2 3A 3.0 2.5 2.0 I C = 12A 1.5 1.0 0 25 50 75 100 125 -60 15 0 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem p erature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm a l Resp on se (Z thJC ) 1 D = 0 .5 0 0 .2 0 0.1 0 .1 0 PD M 0 .0 5 t SING L E P U L S E (TH E R M A L R ES P O N S E ) 0 .0 2 t 2 N o te s : 1 . D u ty fa c to r D = t / t 1 2 0 .0 1 0.01 0.00001 1 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0 .001 0.01 0.1 1 t 1 , R ectang ular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-484 To Order 10 Previous Datasheet Index Next Data Sheet IRGPH50MD2 20 V GE = C ie s = C re s = C o es = 0V, f = 1M Hz C ge + C gc , C ce SHO R TED C gc C ce + C gc V G E , G ate-to-E m itter Voltag e (V) 4000 C , C a pa citan ce (pF ) 3000 C oes C ies 2000 1000 C res V CE = 4 00 V IC = 23A 16 12 8 4 0 0 1 10 0 100 20 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 5.8 = 960V = 15V = 25°C = 23A T o ta l S w itch ing Los ses (m J) Total Switching Losses (mJ) VCC VGE TC IC 60 5.6 5.4 5.2 A 4.8 10 20 30 40 100 RG = 5 Ω V G E = 1 5V V C C = 9 60 V I C = 46 A I C = 23 A 10 I C = 11 A 5.0 0 80 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 6.0 40 Q G , Total G a te C ha rge (nC ) V C E , C ollector-to-Em itter V oltage (V) 50 1 -60 60 -4 0 -20 0 20 40 60 80 100 120 140 160 TC , C a se Tem perature (°C ) R G , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-485 To Order Previous Datasheet Index Next Data Sheet IRGPH50MD2 20 =5 Ω = 1 50 °C = 9 60 V = 1 5V 1000 I , C olle ctor-to-E m itter C urrent (A ) RG TC V CC V GE 15 10 VGGE E= 20 V T J = 1 25 °C 100 S A F E O P E R A T IN G A R E A 10 1 C 5 0 0.1 0 10 20 30 40 50 1 I C , C olle ctor-to-Em itter C urren t (A ) 10 100 100 0 VC E , C o llector-to-E m itter V oltag e (V ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) T otal S w itch ing Losses (m J) 25 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - VFM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-486 To Order 100 00 Previous Datasheet Index Next Data Sheet IRGPH50MD2 300 40 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 30 200 I RRM - (A) trr - (ns) IF = 32A I F = 16A I F = 8.0A I F = 32A 20 I F = 16A 100 I F = 8.0A 10 0 100 0 100 1000 di f /dt - (A/µs) di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. di f/dt Fig. 14 - Typical Reverse Recovery vs. di f/dt 1200 1000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 900 600 di(rec)M/dt - (A/µs) Q RR - (nC) I F = 32A I F = 16A I F = 8.0A 100 I F = 32A I F =16A I F = 8.0A 300 0 100 1000 di f /dt - (A/µs) 10 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. di f/dt Fig. 17 - Typical di (rec)M/dt vs. di f/dt C-487 To Order Previous Datasheet Index Next Data Sheet IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off) , tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Defining E on, td(on) , tr Refer to Section D for the following: Appendix H: Section D - page D-10 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-488 To Order Section D - page D-13