SPW47N60C2 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS(on) in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated P-TO247 • Ultra low effective capacitances • Improved noise immunity Type Package Ordering Code Marking SPW47N60C2 P-TO247 Q67040-S4323 47N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 47 TC = 100 °C 30 94 Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS 1800 EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Reverse diode dv/dt dv/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation, TC = 25°C Ptot 415 W Operating and storage temperature Tj , Tstg -55... +150 °C mJ ID =10A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =20A, VDD =50V IS =47A, VDS < VDD, di/dt=100A/µs, Tjmax =150°C Page 1 2002-10-07 SPW47N60C2 Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.3 Thermal resistance, junction - ambient, leaded RthJA - - 62 - - 3.33 W/K - - 260 °C V Linear derating factor Soldering temperature, Tsold K/W 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 3.5 4.5 5.5 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =20A Gate threshold voltage, VGS = VDS ID =2.7mA Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.5 25 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 250 IGSS - - 100 nA RDS(on) - 0.06 0.07 Ω RG - 0.62 - Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID=30A, Tj =25°C Gate input resistance f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR Page 2 2002-10-07 SPW47N60C2 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 30 - S pF Characteristics Transconductance g fs V DS≥2*I D*R DS(on)max, ID=30A Input capacitance Ciss V GS=0V, V DS=25V, - 8800 - Output capacitance Coss f=1MHz - 3150 - Reverse transfer capacitance Crss - 36 - - 233 - - 470 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=380V, V GS=0/13V, - 28 - Rise time tr ID=47A, R G=1.8Ω, - 9.5 - Turn-off delay time t d(off) Tj=125°C - 103 155 Fall time tf - 9.6 14.4 - 56 - - 123 - - 220 286 - 8 - pF ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =350V, ID =47A VDD =350V, ID =47A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =350V, ID =47A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-10-07 SPW47N60C2 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 47 - - 94 Characteristics Inverse diode continuous IS TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, I F=IS - 1 1.2 V Reverse recovery time trr V R=350V, I F=I S , - 650 1100 ns Reverse recovery charge Qrr diF/dt=100A/µs - 24 - µC Peak reverse recovery current Irrm - 62 - A Peak rate of fall of reverse dirr /dt - 2500 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.002694 Rth2 Cth1 0.001219 0.006036 Cth2 0.004011 Rth3 0.00791 Cth3 0.006484 Rth4 0.023 Cth4 0.008028 Rth5 0.035 Cth5 0.05 Rth6 0.018 Cth6 0.316 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2002-10-07 SPW47N60C2 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC ) ID = f ( VDS ) parameter : D = 0 , TC =25°C 500 10 2 SPW47N60C2 W A 400 10 1 ID Ptot 350 300 10 0 250 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 200 150 10 -1 100 50 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp ) ID = f (VDS ); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 220 K/W A 10 0 20V 15V 12V 180 11V ID ZthJC 160 10 -1 10V 140 120 10 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 -3 9V 80 60 8V 40 7V 20 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 0 s 10 tp Page 5 0 0 5 10 15 25 V VDS 2002-10-07 3 SPW47N60C2 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=150°C RDS(on) =f(ID ) parameter: tp = 10 µs, VGS parameter: Tj =150°C, VGS 0.5 110 A Ω 20V 12V 10V ID 80 RDS(on) 90 6V 6.5V 7V 7.5V 8V 8.5V 9V 70 8.5V 0.4 9V 0.35 60 0.3 10V 8V 50 12V 40 7.5V 30 7V 20 6.5V 0.25 20V 0.2 0.15 6V 10 0 0 5 10 15 0.1 0 25 V 20 40 60 80 A ID VDS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj ) ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs parameter : ID = 30 A, VGS = 10 V 0.38 SPW47N60C2 220 Ω A 0.32 180 0.28 160 0.24 140 ID RDS(on) 110 120 0.2 100 0.16 80 0.12 60 98% 0.08 40 typ 0.04 0 -60 20 -20 20 60 100 °C 180 Tj 0 0 2 4 6 8 10 12 14 V 18 VGS Page 6 2002-10-07 SPW47N60C2 Final data 9 Forward characteristics of body diode 10 Typ. switching time IF = f (VSD ) t = f (RG ), inductive load, Tj =125°C parameter: Tj , tp = 10 µs par.: VDS =380V, VGS=0/+13V, ID=47 A 10 2 10 3 SPW47N60C2 td(off) ns A td(on) 10 2 IF 10 1 t tr 10 0 10 1 tf Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2.4 V 2 10 0 0 3 2 4 6 8 10 12 14 16 VSD Ω 20 RG 11 Typ. switching losses1) 12 Typ. switching losses1) E = f (ID ), inductive load, Tj=125°C E = f(RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, RG =1.8Ω par.: VDS =380V, VGS=0/+13V, ID=47 A 5 3 *) E on includes SDP06S60 diode mWs commutation losses. 1This chart helps to estimate the switching power losses. 4 The values can be different under other operating conditions. mWs *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. 3.5 3 E E 2 2.5 Eon* 1.5 Eoff Eon* 2 E off 1 1.5 1 0.5 0.5 0 0 10 20 30 40 50 60 70 80 A ID 100 Page 7 0 0 2 4 6 8 10 12 14 16 Ω 20 RG 2002-10-07 SPW47N60C2 Final data 13 Avalanche SOA 14 Avalanche energy IAR = f (tAR ) EAS = f (Tj ) par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V 20 2000 mJ 1600 A IAR EAS 1400 10 1200 1000 800 Tj(START)=25°C 600 5 400 Tj(START)=125°C 200 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 0 20 4 µs 10 tAR 40 60 80 100 120 °C 160 Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj ) PAR = f (f ) parameter: EAR =1mJ SPW47N60C2 500 720 V 680 P AR V (BR)DSS W 660 300 640 620 200 600 580 100 560 540 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 10 Hz f Page 8 2002-10-07 6 SPW47N60C2 Final data 17 Typ. capacitances 18 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS ) parameter: VGS =0V, f=1 MHz 10 5 40 pF µJ Ciss 10 4 E oss C 30 10 3 Coss 25 20 10 2 15 Crss 10 10 1 5 10 0 0 100 200 300 400 600 V VDS 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 9 2002-10-07 SPW47N60C2 Final data P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Page 10 2002-10-07 Final data SPW47N60C2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2002-10-07