PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free C VCES = 600V VCE(on) typ. = 1.95V G @VGE = 15V, IC = 12A E n-channel Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 23 12 92 92 12 92 ± 20 100 42 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ------------------------- ----------0.50 ----2 (0.07) 1.2 2.5 -----80 ------ Units °C/W g (oz) 1 11/3/03 IRG4BC30UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 3.1 ICES Zero Gate Voltage Collector Current ------V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.63 ---- V/°C 1.95 2.1 2.52 ---V 2.09 ------- 6.0 -11 ---- mV/°C 8.6 ---S ---- 250 µA ---- 2500 1.4 1.7 V 1.3 1.6 ---- ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 12A VGE = 15V IC = 23A See Fig. 2, 5 IC = 12A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 12A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 12A See Fig. 13 IC = 12A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di (rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. ---------------------------------------------------------------------------------- Typ. 50 8.1 18 40 21 91 80 0.38 0.16 0.54 40 22 120 180 0.89 7.5 1100 73 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig. 8 27 VGE = 15V ---TJ = 25°C ---ns IC = 12A, VCC = 480V 140 VGE = 15V, RG = 23Ω 130 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 0.9 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 12A, VCC = 480V ---VGE = 15V, RG = 23Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C See Fig. ---TJ = 125°C 17 www.irf.com IRG4BC30UDPbF Load Current ( A ) 16 Duty cycle: 50% TJ = 125°C T sink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery 12 Power Dissipation = 21W 60% of rated voltage 8 I 4 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25°C TJ = 150°C 10 1 VGE = 15V 20µs PULSE WIDTH A 0.1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 10 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 100 TJ = 150°C 10 TJ = 25°C 1 V CC = 10V 5µs PULSE WIDTH A 0.1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30UDPbF VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A 3.0 25 V GE = 15V 20 15 10 5 V GE = 15V 80µs PULSE WIDTH IC = 24A 2.5 IC = 12A 2.0 I C = 6.0A A 1.5 A 0 25 50 75 100 125 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 150 TC , Case Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t 0.05 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) 1 t2 Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30UDPbF 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 1600 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 2000 Cies 1200 800 Coes 400 Cres A 0 1 10 VCE = 400V I C = 12A 16 12 8 4 A 0 100 0 10 VCE, Collector-to-Emitter Voltage (V) 10 Total Switchig Losses (mJ) Total Switchig Losses (mJ) 0.56 0.54 0.52 A 0.50 0 10 20 30 40 50 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 50 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V T J = 25°C I C = 12A 0.58 30 Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.60 20 60 R G = 23Ω V GE = 15V V CC = 480V I C = 24A I C = 12A 1 I C = 6.0A A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30UDPbF 1000 1.6 I C , Collector-to-Emitter Current (A) R G = 23 Ω T J = 150°C V CC = 480V V GE = 15V 1.2 0.8 0.4 A 0.0 0 10 20 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1 0.1 1 30 10 100 1000 VCE , Collector-to-Emitter Voltage (V) IC , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switchig Losses (mJ) 2.0 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30UDPbF 100 160 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) I F = 24A I F = 12A 80 I F = 6.0A I F = 24A I F = 12A 10 IF = 6.0A 40 0 100 di f /dt - (A/µs) 1 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 600 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) VR = 200V TJ = 125°C TJ = 25°C Q RR - (nC) 400 I F = 24A I F = 12A 200 1000 I F = 12A 100 IF = 24A IF = 6.0A 0 100 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com IF = 6.0A 1000 10 100 di f /dt - (A/µs) 1000 Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC30UDPbF 90% Vge +Vge Same type device as D.U.T. Vce Ic 90% Ic 10% Vce Ic 430µF 80% of Vce 5% Ic D.U.T. td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Ic Qrr = +Vg tx 10% Irr 10% Vcc DUT VOLTAGE AND CURRENT Vce Vcc 10% Ic 90% Ic tr td(on) Ipk Vpk Vcc Irr Ic DIODE RECOVERY WAVEFORMS 5% Vce t1 t2 Eon = Vce ie dt t1 ∫ t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ trr id dt tx t4 Erec = Vd id dt t3 ∫ t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC30UDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 18 . 18 ' D.U.T. L 1000V Vc* RL= 0 - 480V 480V 4 X IC @25°C 50V 6000µF 100V 19. www.irf.com 20. 9 IRG4BC30UDPbF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED O N WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIO NAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/