PD -94917 IRG4IBC20UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline VCES = 600V VCE(on) typ. = 1.85V G @VGE = 15V, IC = 6.5A E n-channel • Lead-Free Benefits • Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 11.4 6.0 52 52 6.5 52 2500 ± 20 34 14 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– ––– ––– 2.0 (0.07) 3.7 5.1 65 ––– Units °C/W g (oz) 1 12/30/03 IRG4IBC20UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.85 ––– 2.27 ––– 1.87 Gate Threshold Voltage 3.0 ––– VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 gfe Forward Transconductance 1.4 4.3 Zero Gate Voltage Collector Current ––– ––– ICES ––– ––– VFM Diode Forward Voltage Drop ––– 1.4 ––– 1.3 IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V/°C VGE = 0V, IC = 1.0mA 2.1 IC = 6.5A VGE = 15V ––– V IC = 13A See Fig. 2, 5 ––– IC = 6.5A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 250µA ––– S VCE = 100V, IC = 6.5A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M /dt Diode Peak Rate of Fall of Recovery During tb 2 Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 27 4.5 10 39 15 93 110 0.16 0.13 0.29 38 17 100 220 0.49 7.5 530 39 7.4 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 41 IC = 6.5A 6.8 nC VCC = 400V See Fig. 8 16 VGE = 15V ––– TJ = 25°C ––– ns IC = 6.5A, VCC = 480V 140 VGE = 15V, RG = 50Ω 170 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ See Fig. 9, 10, 11, 18 0.3 ––– TJ = 150°C, See Fig. 9, 10, 11, 18 ––– ns IC = 6.5A, VCC = 480V ––– VGE = 15V, RG = 50Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 IF = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt 200A/µs ––– A/µs TJ = 25°C See Fig. ––– TJ = 125°C 17 www.irf.com IRG4IBC20UDPbF 10.0 For both: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified LOAD CURRENT (A) 8.0 Power Dissipation = 9.5 W 6.0 Square wave: 60% of rated voltage 4.0 I 2.0 0.0 Ideal diodes 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 100 TJ = 25°C TJ = 150°C 10 1 VGE = 15V 20µs PULSE WIDTH 0.1 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com A TJ = 150°C 10 TJ = 25°C 1 V CC = 10V 5µs PULSE WIDTH A 0.1 4 6 8 10 12 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4IBC20UDPbF 2.6 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current(A) 12 10 8 6 4 2 0 25 50 75 100 125 V GE = 15V 80µs PULSE WIDTH IC = 13A 2.2 1.8 IC = 6.5A 1.4 I C = 3.3A A 1.0 150 -60 TC , Case Temperature ( °C) -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.1 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC20UDPbF 800 Cies 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 1000 600 Coes 400 Cres 200 A 0 1 10 VCE = 400V I C = 6.5A 16 12 8 4 A 0 0 100 5 VCE, Collector-to-Emitter Voltage (V) 10 = 480V = 15V = 25°C = 6.5A 0.31 0.30 A 0.29 0 10 20 30 40 50 R G , Gate Resistance (Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TJ IC 15 Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.32 10 60 R G = 50 Ω V GE = 15V V CC = 480V IC = 13A 1 IC = 6.5A I C = 3.3A A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4IBC20UDPbF 100 = 50 Ω = 150°C = 480V = 15V I C , Collector Current (A) RG TJ V CC V GE 0.9 0.6 0.3 A 0.0 0 2 4 6 8 10 12 VGE = 20V T J = 125 oC 10 1 0.1 14 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) IC , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 1.2 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4IBC20UDPbF 100 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 80 I F = 8.0A I IRRM - (A) t rr - (ns) IF = 16A 60 I F = 16A 10 IF = 8.0A 40 I F = 4.0A I F = 4.0A 20 0 100 1 100 1000 di f /dt - (A/µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 500 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 400 300 I F = 16A 200 I F = 8.0A 1000 IF = 4.0A IF = 8.0A I F = 16A 100 IF = 4.0A 0 100 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 100 100 di f /dt - (A/µs) 1000 Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4IBC20UDPbF Same type device as D.U.T. 90% 10% Vge 430µF 80% of Vce VC D.U.T. 90% td(off) 10% IC 5% tf tr t d(on) t=5µs Eoff Eon Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Ets = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Ic Qrr = +Vg tx 10% Irr 10% Vcc DUT VOLTAGE AND CURRENT Vce Vcc 10% Ic 90% Ic tr td(on) Ipk Vpk Vcc Irr Ic DIODE RECOVERY WAVEFORMS 5% Vce t1 t2 Eon = Vce ie dt t1 ∫ t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ trr id dt tx t4 Erec = Vd id dt t3 ∫ t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4IBC20UDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 480V 480V 4 X IC @25°C 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4IBC20UDPbF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. t = 60s, f = 60Hz TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information E XA M P LE : TH IS IS A N IR F I8 4 0 G W ITH A S S EM B L Y L O T C O D E 3 43 2 A S S E M B LE D O N W W 2 4 1 9 9 9 IN TH E A S SE M B L Y LIN E "K " Note: "P" in assembly line position indicates "Lead-Free" IN TE R N A TIO N A L R EC TIFIE R LO G O P A RT N U M B ER IR FI8 40 G 9 2 4K 34 A SS EM B LY LO T C O D E 32 D A TE C O D E YEA R 9 = 1 9 9 9 W E EK 2 4 L IN E K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/