IRF IRG4IBC30UDPBF

PD- 95598
IRG4IBC30UDPbF
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• 2.5kV, 60s insulation voltage …
• 4.8 mm creapage distance to heatsink
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM
outline
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.95V
G
@VGE = 15V, IC = 12A
E
n-channel
Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
Visol
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case…
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
17
8.9
92
92
8.5
92
2500
± 20
45
18
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
–––
–––
2.0 (0.07)
2.8
4.1
65
–––
Units
°C/W
g (oz)
1
7/27/04
IRG4IBC30UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltageƒ
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
V(BR)CES
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Min.
600
–––
–––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance „
3.1
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ.
–––
0.63
1.95
2.52
2.09
–––
-11
8.6
–––
–––
1.4
1.3
–––
Max. Units
Conditions
–––
V
VGE = 0V, IC = 250µA
––– V/°C VGE = 0V, IC = 1.0mA
2.1
IC = 12A
VGE = 15V
–––
V
IC = 23A
See Fig. 2, 5
–––
IC = 12A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 250µA
–––
S
VCE = 100V, IC = 12A
250
µA
VGE = 0V, VCE = 600V
2500
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
V
IC = 12A
See Fig. 13
1.6
IC = 12A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M /dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
50
8.1
18
40
21
91
80
0.38
0.16
0.54
40
22
120
180
0.89
7.5
1100
73
14
42
80
3.5
5.6
80
220
180
120
Max. Units
Conditions
75
IC = 12A
12
nC
VCC = 400V
See Fig. 8
27
VGE = 15V
–––
TJ = 25°C
–––
ns
IC = 12A, VCC = 480V
140
VGE = 15V, RG = 23Ω
130
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
0.9
–––
TJ = 150°C, See Fig. 9, 10, 11, 18
–––
ns
IC = 12A, VCC = 480V
–––
VGE = 15V, RG = 23Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH
Measured 5mm from package
–––
VGE = 0V
–––
pF
VCC = 30V
See Fig. 7
–––
ƒ = 1.0MHz
60
ns
TJ = 25°C See Fig.
120
TJ = 125°C
14
IF = 12A
6.0
A
TJ = 25°C See Fig.
10
TJ = 125°C
15
VR = 200V
180
nC
TJ = 25°C See Fig.
600
TJ = 125°C
16
di/dt 200A/µs
––– A/µs TJ = 25°C See Fig.
–––
TJ = 125°C
17
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IRG4IBC30UDPbF
12
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
LOAD CURRENT (A)
10
Power Dissipation = 13 W
8
Square wave:
60% of rated
voltage
6
I
4
Ideal diodes
2
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25°C
TJ = 150°C
10
1
VGE = 15V
20µs PULSE WIDTH A
0.1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
V CC = 10V
5µs PULSE WIDTH A
0.1
5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4IBC30UDPbF
3.0
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current(A)
20
16
12
8
4
0
25
50
75
100
125
V GE = 15V
80µs PULSE WIDTH
IC = 24A
2.5
IC = 12A
2.0
I C = 6.0A
A
1.5
150
-60
TC , Case Temperature ( °C)
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
PDM
0.02
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC30UDPbF
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
1600
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
2000
Cies
1200
800
Coes
400
Cres
A
0
1
10
VCE = 400V
I C = 12A
16
12
8
4
A
0
100
0
10
VCE, Collector-to-Emitter Voltage (V)
10
Total Switchig Losses (mJ)
Total Switchig Losses (mJ)
0.56
0.54
0.52
A
0.50
0
10
20
30
40
50
R G, Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
50
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
T J = 25°C
I C = 12A
0.58
30
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.60
20
60
R G = 23Ω
V GE = 15V
V CC = 480V
I C = 24A
I C = 12A
1
I C = 6.0A
A
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4IBC30UDPbF
1000
R G = 23 Ω
T J = 150°C
V CC = 480V
V GE = 15V
1.6
I C , Collector Current (A)
Total Switchig Losses (mJ)
2.0
VGE = 20V
T J = 125 oC
100
1.2
0.8
10
1
0.4
0.1
A
0.0
0
10
20
30
SAFE OPERATING AREA
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
IC , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Instantaneous Forward Current - I F (A)
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4IBC30UDPbF
100
160
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
120
I IRRM - (A)
t rr - (ns)
I F = 24A
I F = 12A
80
I F = 6.0A
I F = 24A
I F = 12A
10
IF = 6.0A
40
0
100
di f /dt - (A/µs)
1
100
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
600
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
VR = 200V
TJ = 125°C
TJ = 25°C
Q RR - (nC)
400
I F = 24A
I F = 12A
200
1000
I F = 12A
100
IF = 24A
IF = 6.0A
0
100
di f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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IF = 6.0A
1000
10
100
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4IBC30UDPbF
Same type
device as
D.U.T.
90%
10%
Vge
430µF
80%
of Vce
VC
D.U.T.
90%
td(off)
10%
IC 5%
tf
tr
t d(on)
t=5µs
Eon
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Eoff
Ets= (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
trr
Ic
Qrr =
tx
DUT VOLTAGE
AND CURRENT
Vce
10% Ic
90% Ic
tr
td(on)
10% Irr
Ipk
Vpk
Vcc
Irr
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
t2
DIODE REVERSE
RECOVERY ENERGY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
+Vg
10% Vcc
Vcc
trr
id dt
tx
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC30UDPbF
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
0 - 480V
480V
4 X IC @25°C
50V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4IBC30UDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19)
ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.
„Pulse width 5.0µs, single shot.
… t = 60s, f = 60Hz
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E :
T H IS IS AN IR F I8 4 0 G
W IT H AS S E M B L Y
L OT COD E 3 4 3 2
AS S E M B L E D ON W W 2 4 1 9 9 9
IN T H E AS S E M B L Y L IN E "K "
Note: "P" in assembly line
position indicates "Lead-Free"
IN T E R N AT ION AL
R E C T IF IE R
L OGO
AS S E M B L Y
L OT C OD E
P AR T N U M B E R
IR F I8 4 0 G
924K
34
32
D AT E C O D E
Y E AR 9 = 1 9 9 9
W E E K 24
L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/