BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380L3 Marking FC Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 14 Total power dissipation1) Ptot 380 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS 96°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 140 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-16-2003 BFR380L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 6 9 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 1 µA hFE 60 130 200 Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 40 mA, VCE = 3 V 2 Jun-16-2003 BFR380L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT Unit 11 14 - GHz Ccb - 0.45 - pF Cce - 0.18 - Ceb - 1 - Fmin - 1.1 - - 13.5 - - 9.5 - IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure dB IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) Gma IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz |S21e|2 Transducer gain dB IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz - 11 - IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz - 6.5 - IP3 - 29.5 - P-1dB - 16 - Third order intercept point at output2) dBm VCE = 3 V, IC = 40 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 Jun-16-2003 BFR380L3 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 9.965 27.69 1.64 30 1.678 1.322 116.7 8.789 1.529 6.949 6.949 0 0 fA V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = V - fF ps mA V ns - 116.376 736 22.802 0.011 9.71 221 0.782 0.496 0 0.472 0 0.5 0.975 mA A m V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.107 0.2676 1.056 6.9739 0.2564 0.101 0.5 0.338 840 0.202 0.75 1.11 300 fA pA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C7 C1 L2 B Transistor Chip B’ C’ R1 L3 C E’ C6 C2 L1 C5 C3 L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 = 0.575 0.575 0.275 33 28 131 8 8 24 300 204 nH nH nH fF fF fF fF fF fF fF Valid up to 6GHz E EHA07536 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 Jun-16-2003