BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking ATs* 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 * Pin configuration fixed relative to marking (see package picture) Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 Collector-emitter voltage VCES 14 Collector-base voltage VCBO 14 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation1) TS ≤ 80°C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS ≤ 280 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 4.5 5 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 110 200 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V 2 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 21 30 - Ccb - 0.14 0.24 Cce - 0.3 - Ceb - 0.6 - GHz IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt - 0.9 1.4 IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt - 1.3 - IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz - 20 - IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz - 14.5 - Power gain, maximum available1) G ma |S21e|2 Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz dB 15.5 18 - - 13 - IP 3 - 24.5 - P-1dB - 11 - IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 3 GHz Third order intercept point at output2) dBm VCE = 2 V, I C = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 Jan-28-2004 BFP540F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 82.84 28.383 3.19 19.705 1.172 1.3 1.8063 6.76 1 0.81969 2.324 0 3 aA V V Ω fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 107.5 0.48731 5.5 0.02 5.4 0.31111 0.8051 0.4219 0 0.30232 0 0 0.73234 A A Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1 11.15 1 19.237 0.72983 4 0.46576 0.23794 234 0.3 0.75 1.11 300 fA aA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both lead are combined in on electrical connection. RLxI are series resistors for the inductance LxI and Kxa-yb are the coupling coefficients between the inductance Lxa and Lyb. The referencepins for the couple ports are B, E, C, B´, E`, C´. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes LBI = LBO = LEI = LEO = LCI = LCO = CBE = CBC = CCE = KBO-EO = KBO-CO = KEO-CO = KCI-EI = KBI-CI = KEI-CI = RLBI = RLEI = RLCI = 0.42 0.22 0.26 0.28 0.35 0.22 34 2 33 0.1 0.01 0.11 -0.05 -0.08 0.2 0.15 0.11 0.13 nH nH nH nH pH nH fF fF fF Ω Ω Ω Valid up to 6GHz 4 Jan-28-2004 BFP540F Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 300 mW RthJS PTOT K/W 200 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 s TS 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb= ƒ(VCB) Ptotmax/P totDC = ƒ(tp) f = 1MHz 10 1 Ptotmax / PtotDC 0.3 CCB pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 V 14 VCB 5 Jan-28-2004 BFP540F Transition frequency fT= ƒ(IC) Power gain Gma, Gms = ƒ(IC) f = 1GHz VCE = 2V VCE = Parameter in V f = Parameter in GHz 30 dB 30 GHz 26 24 24 22 22 18 3V to 4V 16 18 16 14 1.8GHz 14 12 2V 2.4GHz 12 10 3GHz 10 8 1V 6 4 4GHz 8 5GHz 6 0.5V 6GHz 4 2 0 0 0.9GHz 20 G fT 20 10 20 30 40 50 60 70 80 mA 2 0 100 10 20 30 40 50 60 70 80 mA IC IC Power Gain Gma, Gms = ƒ(f), Power gain Gma, Gms = ƒ (VCE) |S21|² = f (f) IC = 20mA VCE = 2V, IC = 20mA f = Parameter in GHz 55 30 dB dB 24 40 22 35 20 G G 0.9GHz 26 45 30 Gms 1.8GHz 18 2.4GHz 16 25 20 100 3GHz 14 4GHz 12 S|21e|² Gma 5GHz 10 15 6GHz 8 10 6 5 0 0 4 1 2 3 4 GHz 2 0 6 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VCE f 6 Jan-28-2004