BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz • Gold metallization for extra high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP620 Marking R2s 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 °C 2.3 TA ≤ 0 °C 2.1 Collector-emitter voltage VCES 7.5 Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current IC 80 Base current IB 3 Total power dissipation1) Ptot 185 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 95°C 1T is measured on the collector lead at the soldering point to the pcb S Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS ≤ 300 K/W 1 Apr-21-2004 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 2.3 2.8 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 3 µA hFE 110 180 270 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 50 mA, VCE = 1.5 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Apr-21-2004 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 65 - Ccb - 0.12 0.2 Cce - 0.22 - Ceb - 0.46 - Unit GHz IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt - 0.7 - IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt - 1.3 - G ms - 21.5 - dB G ma - 11 - dB Power gain, maximum stable1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω, f = 1.8 GHz dB - 20 - - 9.5 - IP 3 - 25 - P-1dB - 15 - IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω, f = 6 GHz Third order intercept point at output2) dBm VCE = 2 V, I C = 50 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 50 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 Apr-21-2004 BFP620 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 2 2.707 250.7 1.43 2.4 0.6 0.2 0.5 3 fA V V - 2 -0.0065 - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2 Ω fF ps A V ns - 425 0.25 50 10 3.129 0.6 0.75 10 0 0.5 128.1 -1.42 0.8 7.291E-11 1.0E-5 A mA Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 18 1.522 2.364 0.3 1.5 124.9 1 0.52 1.078 298 fA pA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: R C B S C B C C L C C C B F P 6 2 0 _ C h ip S B B L B B L B C C B E C R C C S E L C B R C E S L E C C B E I C C E I L E B C B E O T = C C E O 2 5 ° C Itf = 2 4 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 ) E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes C LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES = 60 50 15 764.5 725.4 259.6 98.4 55.9 140 54 50 106.5 106.7 132.4 99.6 1200 1200 300 pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF Ω Ω Ω Valid up to 6GHz 4 Apr-21-2004 BFP620 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 200 mW 160 K/W RthJS Ptot 140 120 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 2 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 °C TS 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb= ƒ(VCB) Ptotmax/P totDC = ƒ(tp) f = 1MHz 10 1 0.4 Ptotmax/ PtotDC pF CCB 0.3 D=0 0.005 0,01 0,02 0,05 0,1 0,2 0,5 0.25 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 °C 10 0 0 0 tp 1 2 3 4 5 V 7 VCB 5 Apr-21-2004 BFP620 Third order Intercept Point IP3=ƒ(IC) Transition frequency fT= ƒ(IC) (Output, ZS=ZL=50Ω) f = 1GHz VCE = parameter, f = 900MHz - VCE = Parameter in V 27 dBm 55 1.8V 21 1.3 to 2.3 50 45 18 fT IP3 65 GHz 2.3V 15 1.3V 1 40 35 30 12 0.8V 0.8 25 9 0.5 20 15 6 0.3 10 3 0 0 5 10 20 30 40 50 60 70 80 mA 0 0 100 10 20 30 40 50 60 70 80 mA IC 100 IC Power gain Gma, Gms = ƒ(IC) Power Gain Gma, Gms = ƒ(f), VCE = 1.5V |S21|² = f (f) f = Parameter in GHz VCE = 1.5V, I C = 50mA 55 30 dB dB 0.9 26 45 24 40 22 G G 1.8 35 20 30 2.4 18 3 16 20 14 4 12 6 10 20 30 40 50 60 70 mA Gma |S21|² 15 5 10 8 0 Gms 25 10 5 0 90 IC 1 2 3 4 GHz 6 f 6 Apr-21-2004 BFP620 Power gain Gma, Gms = ƒ (VCE) IC = 50mA f = Parameter in GHz 30 0.9 dB 1.8 2.4 20 G 3 4 5 6 15 10 5 0 -5 0.2 0.6 1 1.4 1.8 V 2.6 VCE 7 Apr-21-2004