Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing 35 30 Efficiency 25 IM3 20 -45 ACPR 15 -50 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -30 -40 PTFA181001HL* Package PG-64248-2 Features Two-carrier WCDMA Drive-up -35 PTFA181001GL* Package PG-63248-2 • Thermally-enhanced, plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant • Broadband internal matching • Typical EDGE performance at 1879.8 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 dB - Efficiency = 36% - EVM RMS = 1.8% • Typical CW performance, 1880 MHz, 28 V - Output power at P–1dB = 120 W - Gain 15.5 dB - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability • Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power 10 -55 5 34 36 38 40 42 44 46 Average Output Power (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 45 W (AVG), ƒ = 1879.8 MHz Characteristic Symbol Min Typ Max Unit RMS EVM — 1.8 — % Modulation Spectrum @ 400 KHz ACPR — –61 — dBc Modulation Spectrum @ 600 KHz ACPR — –73 — dBc Gain Gps — 16.5 — dB Drain Efficiency ηD — 36 — % Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Preliminary Data Sheet 1 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 16.5 — dB Drain Efficiency ηD — 41 — % Intermodulation Distortion IMD — –30 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.085 — Ω Operating Gate Voltage VDS = 28 V, ID = 750 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD TBD W TBD W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RθJC TBD °C/W Ordering Information Type and Version Package Type Package Description Shipping Marking PTFA181001GL* V1 PG-63248-2 Thermally-enhanced, plastic open-cavity, slotted flange, single-ended Tray PTFA181001GL PTFA181001HL* V1 PG-64248-2 Thermally-enhanced, plastic open-cavity, earless flange, single-ended Tray PTFA181001HL *See Infineon distributor for future availability. Preliminary Data Sheet 2 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Edge EVM and Modulation Spectrum vs. Quiescent Current EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 1879.8 MHz VDD = 28V, ƒ = 1879.8 MHz, POUT = 46.5 dBm -20 -20 EVM -30 2 -40 1.8 -50 400 KHz 1.6 -60 1.4 -70 1.2 -80 600 KHz 1 0.65 0.70 0.75 0.80 0.85 45 Efficiency -30 -40 35 -50 -60 25 -70 20 -80 15 600 kHz 10 -90 5 -100 -90 0.90 37 39 41 43 45 47 49 Output Power (dBm) EDGE EVM Performance Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 750 mA, ƒ = 1879.8 MHz (as measured in a broadband circuit) VDD = 28 V, IDQ = 750 mA, ƒ1 =1879 MHz, ƒ2 = 1880 MHz Efficiency -20 40 -25 6 35 5 30 4 25 3 20 2 15 EVM 1 0 39 41 43 45 47 -35 -40 5th -45 -50 7th -55 10 -60 5 -65 37 49 39 41 43 45 47 49 Output Power, Avg. (dBm) Output Power (dBm) Preliminary Data Sheet 3rd Order -30 IMD (dBc) 7 45 Drain Efficiency (%) 8 EVM RMS (average %) . 30 400 kHz Quiescent Current (A) 37 40 Drain Efficiency (%) 2.2 Modulation Spectrum (dB) -10 Modulation Spectrum (dBc) EVM RMS (average %) . 2.4 3 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Typical Performance (cont.) Broadband CW Performance (at P-1dB) IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 750 m VDD = 28 V, ƒ1 = 1879, ƒ2 = 1880 MHz 19 -20 60 55 17 50 Output Power 16 15 45 40 Gain 375 mA -30 IMD (dBc) Gain (dB) 18 Efficiency (%), Output Power (dBm) -25 Efficiency -35 -40 1125 mA -45 -50 750 mA -55 -60 14 1805 1818 1831 1844 1857 1870 35 1883 -65 37 39 Frequency (MHz) 43 45 47 CW Broadband Performance Power Sweep VDD = 28 V, IDQ =750 mA, POUT = 47 dBm VDD = 28 V, ƒ = 1880 MHz 50 40 17.0 30 16.5 20 40 10 Efficiency 0 Return Loss 30 25 20 1805 -10 1831 1844 1857 1870 16.0 15.5 IDQ = 750 mA 15.0 IDQ = 375 mA 14.0 -30 1883 36 Frequency (MHz) Preliminary Data Sheet IDQ = 1125 mA 14.5 -20 1818 Power Gain (dB) 45 Return Loss (dB) Gain 35 49 Output Power, Avg. (dBm) 55 Gain (dB), Efficiency (%) 41 38 40 42 44 46 48 50 52 Output Power (dBm) 4 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Typical Performance (cont.) Gain & Efficiency vs. Output Power Output Power (at 1 dB Compression) vs. Supply Voltage VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz IDQ = 750 mA, ƒ =1880 MHz 18 65 17 45 15 35 14 25 Efficiency 13 Output Power (dBm) 16 Drain Efficiency (%) 55 Gain Gain (dB) 52.0 15 12 5 36 38 40 42 44 46 48 50 51.5 51.0 50.5 50.0 49.5 52 24 26 28 30 32 Supply Voltage (V) Output Power (dBm) IS-95 CDMA Performance VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz TCASE = 25°C TCASE = 90°C Drain Efficiency (%) 35 -10 -20 Efficiency 30 -30 25 -40 ACP FC – 0.75 MHz 20 -50 15 -60 10 5 -70 ACPR FC + 1.98 MHz 0 Adj. Ch. Power Ratio (dBc) 40 -80 33 35 37 39 41 43 45 47 Output Power (dBm), Avg. Preliminary Data Sheet 5 of 11 Rev. 01, 2008-06-16 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Ω Frequency D Z Source Z Load G S Z Load Ω MHz R jX R jX 1805 4.62 –6.23 1.50 –3.87 1830 4.18 –6.10 1.51 –3.46 1850 4.20 –6.13 1.50 –3.16 1860 4.58 –6.20 1.49 –3.00 1880 4.42 –6.36 1.48 –2.62 See next page for reference circuit Preliminary Data Sheet 6 of 11 Rev. 01, 2008-06-16 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 10 V C4 10µF 35V R6 5.1K V C5 0.1µF R8 2K V R7 5.1K V C6 1µF C7 0.01µF L1 C8 10pF l5 R9 10 V l1 C12 10pF l3 l6 C14 10µF 50V V DD C15 10µF 50V C24 10pF C21 1.5pF DUT l2 C13 1µF l8 l4 C9 10pF R F_IN C11 1µF l7 l10 l11 l12 l13 C22 1.5pF C10 0.6pF l14 l15 RF_OUT C23 0.6pF l9 L2 C16 1µF C17 10pF C18 1µF C19 10µF 50V a181001ef_sch_06-04-18 C20 10µF 50V Reference circuit schematic for ƒ = 1880 MHz Circuit Assembly Information DUT PCB PTFA181001GL or PTFA181001HL 0.76 mm [.030"] thick, εr = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper Microstrip Electrical Characteristics at 1880 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8, l9 l10 l11 (taper) l12 (taper) l13 l14 l15 0.314 0.172 0.016 0.024 0.218 0.019 0.044 0.233 0.039 0.037 0.033 0.069 0.038 0.331 λ, 50.0 Ω λ, 38.0 Ω λ, 11.4 Ω λ, 60.0 Ω λ, 60.0 Ω λ, 6.9 Ω λ, 6.9 Ω λ, 53.0 Ω λ, 4.9 Ω λ, 4.9 Ω / 10.3 Ω λ, 10.3 Ω / 41.0 Ω λ, 41.0 Ω λ, 41.0 Ω λ, 50.0 Ω 27.43 x 1.37 14.73 x 2.16 1.27 x 10.16 2.24 x 0.99 19.33 x 0.99 1.52 x 17.78 3.43 x 17.78 20.45 x 1.24 3.10 x 25.65 2.92 x 25.65 / 11.43 2.79 x 11.43 / 1.91 6.35 x 1.91 3.25 x 1.91 28.98 x 1.37 1.080 0.580 0.050 0.088 0.761 0.060 0.135 0.805 0.122 0.115 0.110 0.250 0.128 1.141 x 0.054 x 0.085 x 0.400 x 0.039 x 0.039 x 0.700 x 0.700 x 0.049 x 1.010 x 1.010 / 0.450 x 0.450 / 0.075 x 0.075 x 0.075 x 0.054 1Electrical characteristics are rounded. Preliminary Data Sheet 7 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Reference Circuit (cont.) R3 R5 R5 C5 R6 R3 QQ1 C1 C3 R4 C4 R2 C5 R6 VDD C2 R1 C6 R7 C10 C8 C7 R8 R9 C9 C11 C13 C6 C8 R8 C24 C22 C18 C16 C19 C2 R1 C7 C15 C14 VDD C1 Q1 R7 C12 C21 C23 R2 VDD L1 Q1 C3 R4 C4 QQ1 a181001ef_dtl C20 C17 VDD A181001_01 L2 a181001ef_assy Reference circuit assembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5 C6, C11, C13, C16, C18 C7 C8, C9, C12, C17, C24 C10, C23 C14, C15, C19, C20 C21, C22 L1, L2 Q1 QQ1 R1 R2 R3, R8 R4 R5, R9 R6, R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 1.0 µF Capacitor, 0.01 µF Ceramic capacitor, 10 pF Ceramic capacitor, 0.6 pF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 1.5 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 10 ohms Chip Resistor 5.1 k-ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infinion Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 920C105 200B 103 100B 100 100B 0R6 TPSE106K050R0400 100B 1R5 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND *Gerber files for this circuit available on request Preliminary Data Sheet 8 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Package Outline Specifications Package PG-63248-2 4.83±0.51 [.190±.020] 45° X 2.72 [45° X .107] CL 5 45° X 1.78 [45° X .070] 2X R1.63 [R.064] CL 3X R0.51+1.14 –0.25 [R.020+.045 –.010 ] 20.27 [.798] 3.63+0.25 –0.13 [.143 +.010 –.005 ] CL 0.064 (.0025) –A– PG-68248-2-G_po_5-9-08 34.04 [1.340] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Pins: D = drain, S = source, G = gate. 3. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 4. Gold plating thickness: < 0.254 micron [< 10 microinch] 5. Tabs may protrude 0.13 [.005] max from body. 6. All tolerances: TBD. 7. Primary dimensions are mm. Alternate dimensions are inches. Preliminary Data Sheet 9 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package PG-63248-2 p g - 6 9 2 4 8 - 2 ( g ) _ p o _ 5 - 1 9 - 0 8 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Pins: D = drain, S = source, G = gate. 3. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 4. Gold plating thickness: < 0.254 micron [< 10 microinch] 5. All tolerances: TBD. 6. Tabs may protrude 0.13 [.005] max from body. 7. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Preliminary Data Sheet 10 of 11 Rev. 01, 2008-06-15 Preliminary PTFA181001GL/HL Confidential, Limited Internal Distribution Revision History: 2008-06-15 none Previous Version: PreliminaryData Sheet Page Subjects (major changes since last revision) 3-24-06 4-10 to 14 Updated Sales Tbl style for 2 lines. Update Imprint. Change default date/s. Refine existing frames, new frames for final page. Misc updates. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2008-06-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Preliminary Data Sheet 11 of 11 Rev. 01, 2008-06-15