IRF IRF6601

PD - 94366C
IRF6601
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Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with exisiting Surface Mount
Techniques
DirectFETTM Power MOSFET
VDSS
20V
RDS(on) max
ID
3.8mΩ@VGS = 10V
5.0mΩ@VGS = 4.5V
26A
21A
DirectFET™ ISOMETRIC
Description
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
85
26
20
200
3.6
2.3
42
28
±20
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
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Parameter
Junction-to-Ambientƒ
Junction-to-Ambient„
Junction-to-Ambient…
Junction-to-Case†
Junction-to-PCB mounted
Typ.
Max.
Units
–––
–––
–––
–––
–––
35
12.5
20
3.0
1.0
°C/W
1
3/25/02
IRF6601
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 100µA
––– V/°C Reference to 25°C, ID = 1mA
3.8
VGS = 10V, ID = 26A
mΩ
5.0
VGS = 4.5V, ID = 21A ‚
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 70°C
100
VGS = 20 V
nA
-100
VGS = -20 V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge Cont FET
Gate-to-Source Charge
Gate to Drain ("Miller")Charge
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
36
11
12
48
16
140
33
110
3440
2430
380
Max. Units
Conditions
–––
S
VDS = 10 V, ID = 21 A
54
ID = 21A
–––
nC
VDS = 16 V
–––
VGS = 4.5 V,
–––
VDS = 0 V, VGS = 16V
–––
VDD = 15 V
–––
ns
ID = 21 A
–––
RG = 5.1 Ω
–––
VGS = 4.5 V ‚
–––
VGS = 0V
–––
pF
VDS = 10V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‡
Avalanche Current
Typ.
Max.
Units
–––
–––
65
21
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
2
Min. Typ. Max. Units
26
–––
–––
–––
–––
200
–––
–––
–––
–––
–––
–––
0.83
0.68
60
94
62
88
1.2
–––
90
140
93
130
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 21A, VGS = 0V ‚
TJ = 125°C, IS = 21A, VGS = 0V ‚
TJ = 25°C, IF = 21A, VR=15 V
di/dt = 100A/µs ‚
TJ = 125°C, IF = 21A, VR=15 V
di/dt = 100A/µs ‚
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IRF6601
1000
1000
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
2.7V
100
2.7V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
10
10
0.1
1
10
0.1
100
1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
T J = 25°C
T J = 150°C
VDS = 15V
20µs PULSE WIDTH
2.5
3.0
3.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.0
I D = 26A
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
1000
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
100
10
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ, Junction Temperature
80
100
120
140
160
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF6601
6000
5000
=
=
=
=
12
0V,
f = 1MHz
C gs + C gd , C ds SHORTED
C gd
C ds + C gd
4000
C, Capacitance (pF)
I D = 21A
VDS = 16V
VDS = 10V
VDS = 4V
10
VGS , Gate-to-Source Voltage (V)
V GS
C iss
C rss
C oss
Ciss
3000
Coss
2000
1000
8
6
4
2
Crss
0
0
1
10
100
0
20
VDS, Drain-to-Source Voltage (V)
40
60
80
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
100
T J = 150°C
10.0
T J = 25°C
1.0
100µsec
10
1msec
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.0
Tc = 25°C
Tj = 150°C
Single Pulse
0
10msec
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6601
30
RD
VDS
25
VGS
D.U.T.
RG
+
-V DD
I D , Drain Current (A)
20
V GS
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
( °C)
TC , Case Temperature
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA)
100
D = 0.50
10
0.20
0.10
Thermal Response
0.05
1
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
0.1
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 / t 2
J = P DM x Z thJA
1
+TA
10
100
t 1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRF6601
RDS (on) , Drain-to-Source On Resistance ( Ω)
0.006
VGS = 4.5V
0.005
VGS = 10V
0.004
0.003
0
60
120
180
0.02
0.01
ID = 26A
0.00
2.0
240
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
12V
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
160
ID
VG
TOP
VGS
3mA
Charge
BOTTOM
ID
EAS , Single Pulse Avalanche Energy (mJ)
IG
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
9.4A
17A
21A
120
80
40
0
25
50
75
100
125
Starting T , Junction
Temperature
J
150
( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF6601
DirectFET™ Board Footprint
DirectFET™ Tape and Reel Dimension
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7
IRF6601
DirectFET™ Outline Dimension
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
„ Used double sided cooling, mounting pad
… Mounted on minimum footprint full size board with metalized back and with small clip heatsink
† TC measured with thermal couple mounted to top (Drain) of part.
‚ Starting TJ = 25°C, L = 0.30mH, RG = 25W, IAS = 21A. (See Figure 14)
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
8
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