SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS™==Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V •=Improved periodic avalanche rating RDS(on) 0.19 Ω • Extreme dv/dt rated ID 20 A P-TO263-3-2 •=Optimized capacitances P-TO220-3-1 •=Improved noise immunity •=Former development designation: SPPx1N60S5/SPBx1N60S5 Type Package Ordering Code Marking SPP20N60S5 P-TO220-3-1 Q67040-S4751 20N60S5 SPB20N60S5 P-TO263-3-2 Q67040-S4171 20N60S5 D,2 G,1 S,3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 20 TC=100°C 13 ID puls 40 EAS 690 EAR 1 Avalanche current (repetitive, limited by Tjmax ) IAR 20 A Reverse diode dv/dt dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 208 W -55... +150 °C Pulsed drain current 1) TC=25°C Avalanche energy, single pulse mJ ID = 10 A, VDD = 50 V Avalanche energy (repetitive, limited by Tjmax ) ID = 20 A, VDD = 50 V IS =20A, VDS<VDSS, di/dt=100A/µs, Tjmax =150°C TC=25°C Operating and storage temperature Tj , Tstg 1 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient RthJA - - 62 @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - K/W (Leaded and through-hole packages) SMD version, device on PCB: RthJA Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain-source breakdown voltage V(BR)DSS 600 - - V VGS(th) 3.5 4.5 5.5 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 1 mA, Tj = 25 °C Zero gate voltage drain current, VDS=VDSS µA IDSS VGS = 0 V, Tj = 25 °C - 0.5 25 VGS = 0 V, Tj = 150 °C - - 250 IGSS - - 100 nA RDS(on) - 0.16 0.19 Ω Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 13 A 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 2 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 12 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max , ID =13A Input capacitance Ciss VGS =0V, VDS =25V, - 3000 - Output capacitance Coss f=1MHz - 1170 - Reverse transfer capacitance Crss - 28 - Turn-on delay time td(on) VDD =350V, VGS =10V, - 120 - Rise time tr ID =20A, RG =5.7Ω - 25 - Turn-off delay time td(off) - 140 210 Fall time tf - 30 45 - 21 - - 47 - - 79 103 - - 20 - - 40 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Total gate charge Qg VDD =350V, ID =20A VDD =350V, ID =20A, nC VGS =0 to 10V Reverse Diode Inverse diode continuous IS TC=25°C A forward current Inverse diode direct ISM current,pulsed Inverse diode forward voltage VSD VGS =0V, IF =20A - 1 1.2 V Reverse recovery time trr VR =100V, IF=lS, - 610 - ns Reverse recovery charge Qrr diF /dt=100A/µs - 12 - µC 3 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Power dissipation Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS ≥ 10 V 240 SPP20N60S5 22 W A 200 18 180 16 160 ID Ptot SPP20N60S5 14 140 12 120 10 100 8 80 6 60 40 4 20 2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC Safe operating area Transient thermal impedance ID=f (VDS) ZthJC = f (tp ) parameter: D=0.01, TC =25°C parameter : D = tp /T 10 °C 2 SPP20N60S5 10 1 K/W SPP20N60S5 tp = 11.0µs A ID on ) DS ( R 10 1 Z thJC = V DS /I D 10 0 10 -1 100 µs 10 -2 D = 0.50 0.20 10 1 ms 0 10 -3 0.10 0.05 10 ms 10 -4 DC 10 -1 0 10 10 1 10 2 V 10 10 -5 -7 10 3 VDS 4 0.02 single pulse 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s tp 10 0 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Typ. output characteristic Drain-source on-resistance ID = f (VDS) RDS(on) = f (Tj ) Parameter: VGS, Tj = 25 °C parameter : ID = 13 A, VGS = 10 V 1.1 75 A 20V 15V 12V 11V Ω 0.9 RDS(on) 60 55 ID SPP20N60S5 50 10V 45 0.8 0.7 0.6 40 35 0.5 9V 30 0.4 25 0.3 20 8V 98% 15 0.2 10 7V 0.1 5 0 0 5 10 15 typ 20 V 0 -60 30 -20 20 60 100 °C VDS 180 Tj Typ. transfer characteristics Typ. capacitances ID = f ( VGS ) C = f (VDS) VDS≥ 2 x ID x RDS(on)max parameter: VGS =0 V, f=1 MHz 10 5 70 A 60 10 4 55 Ciss 45 pF ID 50 10 3 40 Coss 35 30 10 2 25 20 Crss 15 10 1 10 5 0 0 2 4 6 8 10 12 14 16 10 0 0 V 20 VGS 5 10 20 30 40 50 60 70 80 V 100 VDS 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Avalanche Energy Avalanche SOA EAS = f (Tj ) IAR = f (tAR ) par.: ID = 10 A, VDD = 50 V par.: Tj ≤ 150 °C 20 750 mJ 600 A 500 IAR EAS 550 450 400 10 350 Tj (START)=25°C 300 250 200 5 150 Tj (START)=125°C 100 50 0 20 40 60 80 100 °C 120 0 -3 10 160 10 -2 10 -1 10 0 10 1 10 2 4 µs 10 tAR Tj Drain-source breakdown voltage Gate threshold voltage V(BR)DSS = f (Tj ) VGS(th) = f (Tj) parameter: VGS = VDS , ID = 1 mA SPP20N60S5 7 720 V 680 V GS(th) V (BR)DSS V 660 5 max. 4 640 typ. 620 3 600 min. 2 580 1 560 540 -60 -20 20 60 100 °C 0 -60 180 Tj -20 20 60 100 °C 180 Tj 6 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Forward characteristics of reverse diode Typ. gate charge IF = f (VSD ) VGS = f (QGate ) parameter: Tj , tp = 10 µs parameter: IDpuls = 20 A 10 2 SPP20N60S5 16 SPP20N60S5 V A 12 VGS IF 10 1 0,2 VDS max 0,8 VDS max 10 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 VSD 20 40 60 80 120 nC Qg 7 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data P-TO220-3-1 P-TO220-3-1 dimensions [mm] symbol [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 TO-263 (D²Pak/P-TO220SMD) dimensions symbol A [inch] min max min max 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.65 0.85 0.1 typ. 0.0256 0.0335 5.08 typ. 4.30 4.50 0.2 typ. 0.1693 0.1772 F G H 8 [mm] K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 15 typ. 0.00 0.20 0.5906 typ. 0.0000 0.0079 Q 4.20 0.1654 R S 8° max 2.40 3.00 8° max 0.0945 0.1181 T 0.40 0.0157 5.20 0.60 0.2047 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y Z 9.40 0.3701 16.15 0.6358 2001-07-25 Preliminary data SPP20N60S5 SPB20N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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