HiPerFETTM Power Module VMO 60-05F VDSS = 500 V ID25 = 60 A RDS(on) = 65 mW High dv/dt, Low trr, HDMOSTM Family 1 TO-240 AA 3 6 1 5 Preliminary Data 5 6 3 1 = Drain 5 = Gate Symbol Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 10 kW 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID100 IDM TC = 25°C TC = 100°C TC = 25°C, tp = 10 µs, pulse width limited by TJM 60 37 240 A A A Ptot TC = 25°C 590 W -40 ... +150 150 -40 ... +125 °C °C °C 3000 3600 V~ V~ TJ TJM Tstg VISOL 50/60 Hz, t = 1 min IISOL £ 1 mA, t = 1 s Md Mounting torque(M5 or 10-32 UNF) Terminal connection torque (M5) Weight Typical including screws Symbol Conditions VDSS VGS(th) VGS = 0 V VDS = VGS, ID = 24 mA IGSS VGS = ±20 V DC, VDS = 0 500 nA IDSS VDS = VDSS, VGS = 0 V, TJ = 25°C VDS = 0.8 • VDSS, VGS = 0 V, TJ = 125°C 600 µA 3 mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 µs, duty cycle d £ 2 % 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g 3 = Source 6 = Kelvin Source Features • International standard package • Direct copper bonded Al2O3 ceramic base plate • Isolation voltage 3600 V~ • Low RDS(on) HDMOSTM process Applications • Switched-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC servo and robot drives • DC choppers Advantages • Easy to mount with two screws • Space and weight savings • High power density • Low losses Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 65 V V 75 mW IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 943 Data per MOSFET unless otherwise stated. 1-2 VMO60-05F Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 pulsed 30 60 S 12.6 1.35 0.405 nF nF nF Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 W (External), resistive load 50 45 250 30 ns ns ns ns Qg Qgs Qgd VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 405 90 180 nC nC nC 0.2 0.21 K/W K/W RthJC RthCH heatsink compound applied dS dA a Creepage distance on surface Strike distance through air Allowable acceleration Source-Drain Diode Symbol Conditions IS VGS = 0 V ISM 12.7 9.6 mm mm 50 m/s2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 A Repetitive; pulse width limited by TJM 240 A VSD IF = IS; VGS = 0 V, Pulse test, t £ 300 µs, duty cycle d £ 2% 1.5 V trr IF = IS, -di/dt = 100 A/µs, VDS = 100 V, VGS = 0 V 250 ns © 2000 IXYS All rights reserved Dimensions in mm (1 mm = 0.0394") 2-2