IXYS VMO60-05F

HiPerFETTM
Power Module
VMO 60-05F
VDSS = 500 V
ID25 = 60 A
RDS(on) = 65 mW
High dv/dt, Low trr, HDMOSTM Family
1
TO-240 AA
3
6
1
5
Preliminary Data
5
6
3
1 = Drain
5 = Gate
Symbol
Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 10 kW
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID100
IDM
TC = 25°C
TC = 100°C
TC = 25°C, tp = 10 µs, pulse width limited by TJM
60
37
240
A
A
A
Ptot
TC = 25°C
590
W
-40 ... +150
150
-40 ... +125
°C
°C
°C
3000
3600
V~
V~
TJ
TJM
Tstg
VISOL
50/60 Hz,
t = 1 min
IISOL £ 1 mA, t = 1 s
Md
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
Weight
Typical including screws
Symbol
Conditions
VDSS
VGS(th)
VGS = 0 V
VDS = VGS, ID = 24 mA
IGSS
VGS = ±20 V DC, VDS = 0
500 nA
IDSS
VDS = VDSS,
VGS = 0 V, TJ = 25°C
VDS = 0.8 • VDSS, VGS = 0 V, TJ = 125°C
600 µA
3 mA
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 µs, duty cycle d £ 2 %
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
3 = Source
6 = Kelvin Source
Features
• International standard package
• Direct copper bonded Al2O3 ceramic
base plate
• Isolation voltage 3600 V~
• Low RDS(on) HDMOSTM process
Applications
• Switched-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC servo and robot drives
• DC choppers
Advantages
• Easy to mount with two screws
• Space and weight savings
• High power density
• Low losses
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
500
2
4
65
V
V
75 mW
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
943
Data per MOSFET unless otherwise stated.
1-2
VMO60-05F
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25 pulsed
30
60
S
12.6
1.35
0.405
nF
nF
nF
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External), resistive load
50
45
250
30
ns
ns
ns
ns
Qg
Qgs
Qgd
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
405
90
180
nC
nC
nC
0.2
0.21 K/W
K/W
RthJC
RthCH
heatsink compound applied
dS
dA
a
Creepage distance on surface
Strike distance through air
Allowable acceleration
Source-Drain Diode
Symbol
Conditions
IS
VGS = 0 V
ISM
12.7
9.6
mm
mm
50 m/s2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
60
A
Repetitive; pulse width limited by TJM
240
A
VSD
IF = IS; VGS = 0 V,
Pulse test, t £ 300 µs, duty cycle d £ 2%
1.5
V
trr
IF = IS, -di/dt = 100 A/µs, VDS = 100 V, VGS = 0 V
250
ns
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
2-2