BAR 81W Silicon RF Switching Diode Preliminary data 3 • Design for use in shunt configuration 4 • High shunt signal isolation • Low shunt insertion loss 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAR 81W BBs 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343 Q62702-A1270 Package Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 V Forward current IF 100 mA Total power dissipation, T S = 138 °C Ptot 100 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ...+125 °C Storage temperature Tstg -55 ...+150 Value Unit Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 200 RthJS ≤ 120 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAR 81W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. IR - - 20 nA VF - 0.93 1 V Characteristics Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.6 - VR = 3 V, f = 1 MHz - 0.57 - rf - 0.7 - Ω Ls - 0.15 - nH Forward resistance IF = 5 mA, f = 100 MHz Series inductance Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAR 81W Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 120 mA 100 TS 90 IF 80 TA 70 60 50 40 30 20 10 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-04-1998 1998-11-01 BAR 81W Forward current IF = f (V F) Forward resistance rf = f(IF) f = 100MHz T A = 25°C 10 3 3.0 Ohm mA 2.4 10 2 IF RF 2.2 2.0 1.8 1.6 10 1 1.4 1.2 1.0 10 0 0.8 0.6 0.4 0.2 10 -1 400 500 600 700 800 mV 0.0 -1 10 1000 10 0 mA VF Diode capacitance CT = f (VR) f = 100MHz 1.0 1.0 pF pF 0.8 CT 0.8 CT 1 IF Diode capacitance CT = f (V R) f = 1MHz 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0 10 1 2 3 4 5 6 7 8 V 0.2 0 10 VR Semiconductor Group Semiconductor Group 1 2 3 4 5 6 7 8 V 10 VR 44 Sep-04-1998 1998-11-01