Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 17 0.0075 @ VGS = 4.5 V 14 APPLICATIONS D Buck Converter D Synchronous Rectifier - Secondary Rectifier D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 12 14 9 A "50 IDM Continuous Source Current (Diode Conduction)a V 17 ID 2.7 1.40 3.0 1.6 2.0 1.0 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 34 41 67 80 15 19 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71880 S-03662—Rev. B, 14-Apr-03 www.vishay.com 1 Si4356DY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.4 V VDS = 0 V, VGS = "12 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 70_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea mA 40 A VGS = 10 V, ID = 17 A 0.0048 0.006 VGS = 4.5 V, ID = 14 A 0.0060 0.0075 gfs VDS = 15 V, ID = 17 A 60 VSD IS = 2.7 A, VGS = 0 V 0.68 1.1 30 45 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate-Resistance RG Turn-On Delay Time nC 7.2 6.7 2 3.4 td(on) 16 25 tr 10 15 105 160 35 55 40 70 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 17 A 1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 3 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 2V 20 10 40 30 20 TC = 125_C 10 25_C -55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Document Number: 71880 S-03662—Rev. B, 14-Apr-03 Si4356DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 5000 0.008 4000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.010 VGS = 4.5 V 0.006 VGS = 10 V 0.004 Ciss 3000 2000 0.002 Coss 1000 Crss 0.000 0 0 10 20 30 40 50 0 6 Gate Charge 24 30 On-Resistance vs. Junction Temperature 6 1.6 VDS = 15 V ID = 17 A 5 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 4 3 2 1 0 0 8 16 24 32 VGS = 10 V ID = 17 A 1.4 1.2 1.0 0.8 0.6 -50 40 -25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.025 r DS(on) - On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.020 0.015 0.010 ID = 17 A 0.005 0.000 1 0.00 25 TJ - Junction Temperature (_C) Qg - Total Gate Charge (nC) I S - Source Current (A) 12 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 71880 S-03662—Rev. B, 14-Apr-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4356DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power Threshold Voltage 0.4 200 ID = 250 mA 160 -0.0 Power (W) V GS(th) Variance (V) 0.2 -0.2 120 80 -0.4 40 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (sec) TJ - Temperature (_C) Safe Operating Area 100 1 ms Limited by rDS(on) I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71880 S-03662—Rev. B, 14-Apr-03 Si4356DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 Document Number: 71880 S-03662—Rev. B, 14-Apr-03 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1